26Q0270_SOL_SPECS_ATT 2.pdf
PDF 141 KB Posted
- Attached to
- POWER TRANSISTOR TO-3 PACKAGE
- Solicitation number
- N0016426Q0270
About this file
This is a Request for Quote (RFQ) document containing technical specifications for a 2N3773 power transistor. The document outlines the absolute maximum ratings, electrical characteristics, thermal properties, and packaging requirements for the device.
The 2N3773 is a power transistor with a maximum collector-emitter voltage of 140 Vdc (sustained) and 160 Vdc (transient), capable of handling continuous collector currents up to 16 amperes and peak currents of 30 amperes. Key electrical characteristics include a DC current gain (hFE) ranging from 15 to 60 at 8 amperes and a minimum of 5 at 16 amperes, with collector-emitter saturation voltages not exceeding 1.4 Vdc at 8 amperes or 4.0 Vdc at 16 amperes. The device operates across a junction temperature range of –65 to +200°C with a maximum power dissipation of 150 watts at 25°C case temperature. The thermal resistance is specified at 1.17°C/W (junction-to-case). The transistor is packaged in a TO-3 package configuration. This specification document provides the technical requirements that prospective vendors must meet in responding to the quote request.
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Other files
| File | Type | Posted |
|---|---|---|
| Solicitation - N0016426Q0270.pdf | ||
| N0016426Q0270_SYNOPSIS.pdf | ||
| 26Q0270_SOL_EVALUATION CRITERA_ATT 1.pdf |
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Text version
2N3773 Specifications | RFQ Document
Power Transistor Specifications
Absolute Maximum Ratings
Characteristic Symbol Value Unit
Collector–Emitter Voltage VCEO 140 Vdc
Collector–Emitter Voltage VCEX 160 Vdc
Collector–Base Voltage VCBO 160 Vdc
Emitter–Base Voltage VEBO 7 Vdc
Collector Current (Continuous) IC 16 Adc
Collector Current (Peak) IC 30 Adc
Base Current (Continuous) IB 4 Adc
Total Power Dissipation (@ Tc = 25°C) PD 150 W
Operating & Storage Junction Temperature TJ, Tstg –65 to +200 °C
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Conditions
Collector–Emitter Breakdown Voltage
VCEO(sus
140 — Vdc IC = 0.2 Adc, IB = 0
DC Current Gain hFE 15 60 — IC = 8 Adc, VCE = 4 Vdc
DC Current Gain hFE 5 — — IC = 16 Adc, VCE = 4 Vdc
Collector–Emitter Saturation Voltage
VCE(sat) — 1.4 Vdc IC = 8 Adc, IB = 800 mAdc
Collector–Emitter Saturation Voltage
VCE(sat) — 4.0 Vdc IC = 16 Adc, IB = 3.2 Adc
Base–Emitter On Voltage VBE(on) — 2.2 Vdc IC = 8 Adc, VCE = 4 Vdc
2N3773 Specifications | RFQ Document
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal Resistance, Junction–to–Case RθJC 1.17 °C/W
Packaging Information
Device Package
Power Transistor TO-3 Package
| Absolute Maximum Ratings |
| Electrical Characteristics |
| Thermal Characteristics |
| Packaging Information |
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