Project Grant DESC0024804

This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...

The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...

This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $323,000 in funding to The Research Foundation for the State University of New York (RF-SUNY) at the University at Albany. The goal of the project is to develop highly conductive p-type aluminum gallium nitride (AlGaN) semiconductor materials through the use of beryllium (Be) co-doping. The research team plans to fabricate conductive p-type AlGaN using in-situ...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

Adroit Materials, Inc. was awarded a $500,000 Project Grant from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop ion implantation-enabled fabrication of aluminum nitride (AlN) based Schottky diodes. The two-year award, issued on July 5, 2021, will support Adroit Materials' research into using ion implantation techniques to manufacture AlN-based power electronics components with improved performance over traditional silicon devices. ARPA-E's Advanced...

Adroit Materials, Inc. received a $500,000 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop KV-class gallium nitride-based junction barrier Schottky diodes using ion implantation. The two-year award, issued on June 18, 2021 with a completion date of June 17, 2023, will support Adroit Materials' efforts to advance ARPA-E's objectives of supporting innovative energy technologies. Under the SBIR/STTR program, the company will work on...

The federal Project Grant award of $100,000.00 from the Office of Naval Research (ONR) under the Basic and Applied Scientific Research program (CFDA 12.300) will support the growth and characterization of homoepitaxial beta-Ga2O3 on native substrates for vertical power device applications. The award period runs from August 26, 2025 to August 25, 2028 and will be performed by Novel Crystal Technology, Inc. in Japan. This research aims to advance scientific understanding and develop technologies...