Low doped SIC epiwafers for room temperature, ultrafast, and radiation hard sensors

This $199,985 federal Project Grant award was provided by the U.S. Department of Energy (DOE) Office of Science Financial Assistance Program (CFDA 81.049) to Mainstream Engineering Corp, a for-profit manufacturer based in Rockledge, Florida. The funding will support the development of low-doped silicon carbide (SiC) epiwafers for room temperature, ultrafast, and radiation-hard sensors. The award has a period of performance from February 12, 2024 to February 11, 2025. The DOE Office of Science program focuses on funding fundamental research and technology development to further scientific understanding and support U.S. energy, economic, and national security priorities. Through this grant, Mainstream Engineering Corp will contribute to advancing SiC material science and semiconductor sensor technologies with potential applications in areas such as radiation detection and high-speed electronics.