Project Grant DESC0023842

This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....

Adroit Materials, Inc. was awarded a $500,000 Project Grant from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop ion implantation-enabled fabrication of aluminum nitride (AlN) based Schottky diodes. The two-year award, issued on July 5, 2021, will support Adroit Materials' research into using ion implantation techniques to manufacture AlN-based power electronics components with improved performance over traditional silicon devices. ARPA-E's Advanced...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

Adroit Materials, Inc. received a $500,000 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop KV-class gallium nitride-based junction barrier Schottky diodes using ion implantation. The two-year award, issued on June 18, 2021 with a completion date of June 17, 2023, will support Adroit Materials' efforts to advance ARPA-E's objectives of supporting innovative energy technologies. Under the SBIR/STTR program, the company will work on...

The National Science Foundation (NSF) Directorate for Engineering (CFDA #47.041) awarded a 3-year, $442,800 Project Grant to the Regents of the University of Minnesota to conduct fundamental research on improving the high-pressure, high-temperature manufacturing process for producing large, high-quality diamond single crystals. The research aims to increase the size, quality, and cost-effectiveness of synthetic diamond production, enabling new applications in optical elements, radiation...

Applied Diamond, Inc. was awarded a $206,380 project grant from the Department of Energy Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to develop a diamond detector system for ion-beam diagnostics. The grant-funded project will support the design and testing of an innovative diamond-based detector that can be used to characterize the properties of ion beams with unprecedented resolution. This detector system aligns with the Office of Science's mission...

Nomis Power Corporation received a $498,297 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy to develop 6.5kV, 100A silicon carbide power modules at less than half the cost of current commercial solutions. Through this two-year ARPA-E Seed Small Business Innovation Research award, Nomis Power intends to bring to market by July 2023 silicon carbide power semiconductor devices and modules that can meet 21st century energy demands in a more affordable...

This EAGER (Early-concept Grants for Exploratory Research) Project Grant award, valued at $200,000 and provided by the National Science Foundation (NSF) Engineering program (CFDA 47.041), aims to advance the synthesis of diamond nanoparticles using low-temperature plasma (LTP) reactors. The research seeks to discover new reaction pathways to control diamond growth and bond formation in LTPs, with the goal of enabling the scalable production of high-quality diamond nanoparticles for critical...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant of $521,938 awarded to Arizona State University (ASU) aims to advance the development of ultrawide bandgap aluminum nitride (AlN) field-effect transistors (FETs) for high-performance power electronics. The 5-year project, starting June 1, 2024, will conduct fundamental research and device engineering to address key material and device obstacles for AlN power FETs, with the goal of unlocking the full potential of AlN...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...