Cooperative Agreement W911NF1920277

This Project Grant award from the National Science Foundation (NSF) Integrative Activities program (CFDA 47.083) provides $299,938 to the Regents of the University of Idaho, doing business as the University of Idaho, to support research on the integration and packaging of wide bandgap semiconductor chips and sensors for extreme high-temperature (up to 600°C) applications. The key objectives of this 2-year project are to investigate the integration of silicon carbide (SiC), gallium nitride (GaN),...

General Electric Company's GE Additive division was awarded a $1,466,390 cooperative agreement from the Department of Energy's Office of Energy Efficiency and Renewable Energy to develop a novel additive manufacturing process for fabricating silicon carbide matrix composite heat exchangers. The objective is to utilize an advanced additive manufacturing machine and method to fabricate complex silicon carbide components and incorporate chopped fibers to enable composite properties for applications...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award, totaling $303,103, aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The lead institution, University of Texas at Dallas (UTD), will collaborate on this 3-year project to address existing challenges in ultra-wide bandgap semiconductor device design, materials properties, and packaging techniques. The key...

Free Form Fibers LLC received a $206,500 Project Grant award from the Department of Energy Office of Science on June 28, 2021 to develop homogeneous joining of silicon carbide fiber reinforced silicon carbide matrix composites. The work will be performed in Saratoga Springs, New York through June 27, 2022. This award is provided through the Office of Science Financial Assistance Program (CFDA #81.049), which supports basic research to deliver scientific discoveries and tools that transform...

Adroit Materials, Inc. received a $500,000 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop KV-class gallium nitride-based junction barrier Schottky diodes using ion implantation. The two-year award, issued on June 18, 2021 with a completion date of June 17, 2023, will support Adroit Materials' efforts to advance ARPA-E's objectives of supporting innovative energy technologies. Under the SBIR/STTR program, the company will work on...

This National Science Foundation (NSF) Engineering program (CFDA 47.041) Project Grant award of $425,000 to the University of Washington is focused on developing high-speed perovskite light-emitting diodes (LEDs) for optical interconnects and data transmission. The key objectives are to: Engineer perovskite semiconductor materials and device designs to minimize resistance and increase LED modulation bandwidth. Optimize modulation formats using data-driven learning for high-bandwidth operation....

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...