Advanced high-voltage silicon carbide insulated gate bipolar transistor (igbt)
Ended Cooperative Agreement Awarded Last action
- Award ID
- W911NF1320025
- Recipient
-
United Silicon Carbide, Inc. UEI E1ZMN21UWJK5
- Awarding agency
-
Department of Defense
- Obligated
- $5,984,760
Award facts
- Assistance listing
- 12.431 Basic Scientific Research
- Completion date
- Originally
- Funding agency
- Department of the Army Department of Defense
- Place of performance
- Monmouth Junction, South Brunswick Township, NJ 08852, USA
Award details come from USAspending.gov.
Transactions
| Action | Obligated | Date |
|---|---|---|
| Amendment | $985,794 | |
| Amendment | $2,000,000 | |
| Original award | $2,998,966 |
Quick answers
Who received award W911NF1320025?
W911NF1320025 was awarded to United Silicon Carbide, Inc. by Department of Defense on July 12, 2013.
How much is award W911NF1320025 worth?
$5,984,760 has been obligated on W911NF1320025.
Which agency awarded W911NF1320025?
Department of Defense awarded W911NF1320025, with funding from Department of the Army (Department of Defense).
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