Cooperative Agreement D24AC00121

Award Date 7/15/24
Completion Date 7/14/26
Dollars Obligated $2M
Federal Grant Program
12.910
Assistance Type
Cooperative Agreement
Place of Performance
Atlanta, GA, USA
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This federal Cooperative Agreement award, provided by the Defense Advanced Research Projects Agency (DARPA) under the Research and Technology Development program (CFDA 12.910), is focused on advancing the state of the art in aluminum nitride (AlN) semiconductor technology. The award, totaling $1,976,602 and running from July 2024 to July 2026, is led by the Georgia Tech Research Corporation and includes sub-awards to the University of Wisconsin-Madison and the University of Maryland, College Park.

The key objectives of this project are to: 1) develop epitaxial growth and doping techniques for high-concentration n-type and p-type AlN layers, 2) advance characterization, modeling, and thermal/electrical simulation of AlN devices, 3) fabricate and evaluate AlN-based diode and transistor structures, and 4) investigate novel contact materials and concepts to enable low-resistance ohmic contacts to ultra-wide bandgap AlN. The research aims to overcome longstanding challenges in realizing high-performance AlN semiconductors and accelerate the development of AlN-based electronics with potential defense and commercial applications.

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