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All Federal Contract Awards
Definitive Contract W911QX12C0190
Award Date
9/28/12
Potential Completion Date
10/8/13
Potential Value
$385K
Overview
Contacts
1
Activity
3
Transactions
3
Subawards
Opportunity Stack
Similar Awards
Funding Federal Agency
Research Development and Engineering Command
Contracting Federal Agency
ACC Aberdeen Proving Ground
Awardee
AJA International, Inc. R1LSGE9JKAR8
Ultimate Awardee
Not listed
NAICS Category
333295 - Semiconductor Machinery Manufacturing
PSC Category
6640 - Laboratory Equipment And Supplies
Set-Aside Type
Total Small Business
Federal Contract Vehicle
Not listed
Extent Competed
Full and Open Competition after exclusion of sources
Major Defense Program
Not listed
Pricing Type
Firm Fixed Price
Place of Performance
Scituate, MA 02066, USA
Solicitation Procedures
Two Step
Number Of Offers Received
9
Legislative Mandate
Not listed
National Interest Action
Not listed
Research Type
Not listed
Primary Consortia Member
Not listed
Update #1
Update #2
MULTITARGET SPUTTERING SYSTEM
Posted 9/28/12
5
1
Name
Description
Solicitation Number
FederalAgency
Type
PostedDate
Multi Target Sputtering System
Added: Aug 28, 2012 3:18 pm This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will not be issued. CLIN 0001 : One (1) multi-target sputter system in accordance with the requirements detailed in (vi) below. CLIN 0002 OPTION 1: One (1) Spare Parts Kit to include high wear items (such as valves, o-rings, solenoids, Mass Flow Controllers (MFCs)) typical for sputter system operating in a 24/7 environment to maintain operation for one (1) year.CLIN 0003 OPTION 2: Hardware for a spare sputtering source including one (1) magnetron sources capable of handling 4 inch or 100 millimeter (mm) diameter targets and one (1) flex mount assembly to provide tilt capability.CLIN 0004 OPTION 3: High Magnetic sputter source upgrade for deposition of magnetic materials such as Ni, NiFe, NiCo, including all related sputtering hardware.CLIN 0005 OPTION 4: One (1) Radio Frequency (RF) power supply with automatic matching network and control with a minimum of 600 Watts (W).CLIN 0006 OPTION 5: One (1) DC Power Supply with advanced arc handling and a minimum of 2 kilowatts (kW).CLIN 0007 OPTION 6: One (1) DC Power Supply with advanced arc handling capability and a minimum of 5 kW.CLIN 0008 OPTION 7: One (1) Pulsed DC Power Supply with arc repression and a minimum of 1.5 kW.CLIN 0009 OPTION 8: Residual Gas Analyzer that is differentially pumped and is a stand-alone system, complete with pumping and software (vi) Description of requirements: 1. The Contractor shall ensure that the multi-target sputtering system can process wafer/substrate with specifications listed in Table 1 below. Table1Wafer Diameter (mm) Thickness Range Micrometer (um) Configuration Common Materials100mm 200um-1000um Semiconductor Equipment and Materials International (SEMI) standard flats Silicon, Glass, Gallium Arsenide, Sapphire, Silicon Carbide150mm 200um-1000um SEMI standard flats or notch Silicon, Glass, Gallium Arsenide, Sapphire, Silicon Carbide200mm 400um-1000um SEMI standard flats or notch Silicon, Glass, Gallium Arsenide, Sapphire, Silicon CarbideThe Contractor shall ensure that the multi-target sputtering system is equipped with the following equipment and can meet the following minimum requirements: Overall:- Has class 100 compatibility in its entirety.- Is capable of being operated in 1) automatic mode utilizing programmed process operations; 2) semi-automatic mode utilizing safety interlock features; or 3) manual mode allowing independent control of all operating components.- Has the ability to meet current industry standard requirements for safety including the use of Emergency Off (EMO) panic buttons, shielding and interlocks for hazardous areas including high voltages and moving parts. A process chamber :- Water cooled - Sized to accommodate use of wafer substrates up to and including 200mm in diameter and the use of up to tee (3) sputtering sources- Water cooled front access door- A minimum of one (1) viewport with viewport shutter- Appropriate pumping, vacuum gauging, and instrumentation ports- Removable chamber liners - two (2) sets- Minimum of four (4) process gases to be configured for Nitrogen (N2), Oxygen (O2), Argon (Ar) and Helium (He) Magnetron sputtering sources:- Capable of simultaneous co-sputtering from a minimum of two (2) sputter sources. Contractor must identify if co-sputtering from tee (3) sources is possible. - Minimum of tee (3) magnetron sources capable of handling 4 inch or 100 millimeter (mm) diameter targets- Minimum of tee (3) individual deposition shutters, one for each sputtering source- Minimum of tee (3) flex mount assemblies to provide tilt adjustment capability - Sputter down configuration- Contractor shall provide all sputtering source targets for acceptance tests detailed in Sections 2.1 and 2.4- Sputter source operation Single source operation capable of concurrent radio frequency (RF), direct current (DC), or pulse DC operation or any combination thereof on any of the tee (3) sputter sources Dual source operation capable of concurrent RF, DC, or pulse DC operation or any combination thereof on any two (2) of the tee (3) sputter sources Triple source operation capable of concurrent RF, DC, or pulse DC operation or any combination thereof on all tee (3) sputter sources- Sputter Power Supplies Minimum of one (1) RF power supply with automatic matching network and control with a minimum of 600 Watts (W) Minimum of one (1) Pulsed DC Power Supply with variable frequency arc repression and a minimum of 1.5 kilowatts (kW)- Minimum of one (1) Multi-position DC or Radio Frequency (RF) switch that can be connected from a power supply to any of the sputtering sources permitting sequential operation of each cathode.- Sputtering sources must be configured and accessible such that a target change will take a technician less than ten (10) minutes once the system is vented. Substrate- Substrate heating to a minimum of 800 degrees Celsius- Variable speed, rotating substrate fixture with a speed of at least 20 revolutions per minute (rpm) with speed control- Accommodates the substrates listed in Table 1as well as piece parts thereof (piece part mounting to a carrier substrate is acceptable). - RF/DC bias capability with appropriate darkspace shielding- One (1) RF power supply with automatic tuning for substrate bias with a minimum of 100W- Gas injection ring or equivalent means of introducing process gases directly to substrate Vacuum System- Chamber - Turbomolecular pump with a pumping speed of at least 1000 liter(l)/second (s)- Minimum tee (3)-position Gate valve- Load lock - Single wafer up to 200 mm diameter Turbomolecular pump with a pumping speed of at least 60 l/s - Mechanical roughing pump- Appropriate vacuum gauging and instrumentation- Upstream pressure control- Capable of reaching a base vacuum less than 1x10-6 milliTorr(mT) in 20 minutes Water distribution manifold- Manual shut off valves - Interlocked flow switches to critical components Power Distribution- Electrical components based on standard voltages, frequency and currents used in the United States of America (USA) - Single service drop (208 Volts Alternative Current (VAC), 50/60 Hertz (Hz), 3-phase, 5-wire, 60 Amperes (amps) based on configuration)- Component wiring is routed to a centralized power distribution panel- EMO protection - Isolation transformer providing safe operation for sputtering while substrate heating- Appropriate safety interlocks- Dedicated earth ground provided on-site Documentation- Operation manual provided as portable document format (PDF)- General assembly, vacuum, water, and electrical schematics provided as PDF Troubleshooting- Access to a technical support person to answer questions regarding tool operation, hardware troubleshooting and basic sputter deposition processing via telephone and email during normal business hours 8AM-5PM for the time zone of the Contractor's main base of operation. Hardware Warranty- Hardware warranty for one (1) year beginning the first day of approval of the Post-installation Acceptance Tests Report (reference Section 7). Hardware warranty must cover 1) parts (excluding consumable parts and materials); 2) repairs and modifications if the multi-target sputtering system is no longer functional according to the acceptance tests specifications (reference Section 6); 3) all required labor and transportation costs (including airfare, accommodation and per diems) to and from ARL for the technical support individual, if necessary. - Service request response time of 48 hours from the time the Government Technical Representative calls or emails in a request for service. Software Warranty- Software warranty for 18 months beginning the first day of approval of the Post-installation Acceptance Test Report (reference Section 7). Software warranty must cover all new software issues and upgrades for (3) years. Training- At least one (1) day of on-site training on the maintenance and operation of the multi-target sputtering system. Software & Computer Control- Current versions of all software-related components- Personal Computer (PC)- based system configured with CD-RW drive and Univeral Serial Bus (USB) ports- Screen layouts follow the guidelines of SEMI E95-0200 (Specification for Human Interface for Semiconductor Manufacturing Equipment)- PC provides supervisory computer control over vacuum pumping, vent, and cryo pump regeneration cycles (when applicable). It also controls deposition power supplies Multi Function Centers (MFC)'s, substrate heating, and substrate fixture motor rotation (when applicable).- Includes Graphical User Interface (GUI) display of the following system parameters, when applicable: Vacuum Screen: Visual display of valve position, pump status and vacuum status Deposition Screen: Indication of shutter position, Deposition source status, Source material & target life log Gas Screen: Mass flow controller modes, Indication of gas valve status, Display of pressure control settings and values Motion Screen: Display & input of speed and velocity profiles, Display & input of proportional-integral-derivative (PID) control parameters Cooling Screen: Water flow switch interlock status Heating Screen: Set points & control parameters- Software Process programming and history logging accessible as readable text, comma separated variable, or Excel data file.- Definitions: Standard wafers - SEMI specification format in terms of geometry, with low to moderate wafer bow (less than 30 micrometers (um)), within the contracted materials and thickness range, minimal backside patterning, and no tough wafer vias. Fault: Something has gone wrong. Failure: Equipment has a problem, requires repair. Repair: Modification to hardware or software necessary for equipment to return to the standard operational specification as outlined in Section 2 and Section 3. High Failure: Failure compromising personnel safety, equipment damage or product damage. Low Failure: Failure not comprising personal safety, equipment damage or product damage. Assist: Unplanned interruption, recoverable by operator reset without requiring repair. Post reset there is no variation from specified process behavior. Uptime: Percentage of twelve (12) hour shift time that the equipment is able to process as specified.- Metrics (means are calculated during the test interval): MTBHF(Mean Time Before High Failure) No significant process variation from predetermined process set, processing standard and wafers. Greater than ninety (90) days (i.e. less than one (1) qualifying event per ninety (90) days). MTBLF (Mean Time Before Low Failure) No significant process variation from predetermined process set, processing standard and wafers. Greater than thirty (30) days (i.e. less than tee (3) qualifying event per 90 days). MTBA (Mean Time Before Assist) Greater than five (5) days (i.e. less than 18 qualifying events per 90 days). MTTR (Mean Time to Repair) Time tool is not available for processing. Less than 72 hours Uptime Higher than 95%2. Pre-installation Acceptance TestsThe Contractor shall ensure that the multi-target sputtering system is fully functional at the Contractor's facility in accordance with the Government's Pre-Installation Acceptance Tests as follows:2.1 Demonstrate that the deposition meets base specifications as described in the salient characteristics, which includes wafer handling, thermal processing temperatures, ramp rates, temperature uniformity, gas line configuration, and computer control.2.2 Demonstrate that the multi-target sputtering system is operationally functional, which includes: Substrate handling queuing, and processing for at least 50 wafers (150 millimeters (mm) in diameter)o Pump in load lock, transfer to chamber, return to loadlock, Vento Atmospheric pump down of loadlock to facilitate chamber transfer in less than 10 minutes Configured with four (4) gas lines (for N2, O2, Ar, and He) Substrate heating and rotationo Operating with a temperature range of operation of at least room temperature to 800 degrees Celsius Depositiono Verify DC and pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify DC and pulse DC operation using Molybdenum (Mo) sputter sources Substrate - Si / SiO2 (500nm) Film thickness - 200 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify reactive operation for the deposition of SiO2 using a Si sputter sources Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using SiO2 sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using Silicon Nitride (Si3N4) sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.9 to 2.05 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify thick deposition of SiO2 coatings Substrate - Si Film thickness - 2000 nm (Note: ultimate goal would be 5 to 7 microns) Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify multilayer coating process with SiO2 and Si3N4 sputter sources Substrate - Si SiO2 layer thickness - 200nm Si3N4 layer thickness - 50nm Total layers - 10 starting with Si3N4 coating Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify graded simultaneous co-sputtering using Si and copper (Cu) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up Deposition ends with Cu at a set power and Si at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify graded simultaneous co-sputtering using Si, copper (Cu) and Aluminum (Al) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up until Si and Cu reach 50% set power Cu is held at 50%set power, while Al is power is slowly ramped up and Si is slowly ramped down until Si is at zero power and Al is at 50% set power Cu is slowly ramped down and Al is slowly ramped up Deposition ends with Al at a set power and Cu at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify dual sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify triple sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify dual sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify triple sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Deposition uniformity Wafer-to-wafer uniformity (minimum 10 wafers) using Ti sputter source Wafer-to-wafer uniformity (minimum 10 wafers) using SiO2 sputter source Average thickness uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Average thickness uniformity on 200mm substrate less than 6% as measured by a ellipsometry, reflectometry, or step height profilometry2.3 The Government Technical Representative reserves the right to witness the acceptance testing procedure at the Contractor's site. The Contractor shall notify the Government Technical Representative within one (1) month of the pre-installation acceptance testing date.3. Pre-installation Acceptance Tests ReportThe Contractor shall submit a pre-installation acceptance tests report to the Government Technical Representative outlining the results of the acceptance tests within one (1) week of the acceptance testing at the Contractor's site. The Government Technical Representative will review and approve the pre-installation acceptance tests report within one (1) week of receiving the pre-installation acceptance tests report. The Contractor shall ship the multi-target sputtering only after the Government Technical Representative has authorized the test results. 4. Delivery and InstallationThe Contractor shall deliver and install the multi-target sputtering system to ARL, 2800 Powder Mill Road, Building 207, Room 3B-41, within two (2) weeks of receiving approval of the pre-installation acceptance tests report from the Government Technical Representative. 5. Post-installation Acceptance TestsThe Contractor shall ensure that the multi-target sputtering system is fully functional after the system has been installed in room 3B-41 at ARL using the following Government-created acceptance tests:5.1 Demonstrate that the multi-target sputtering system meets base specifications as described in Section 2, which includes wafer handling, thermal processing temperatures, ramp rates, temperature uniformity, gas line configuration, and computer control.5.2 Demonstrate that the multi-target sputtering system is operationally functional, which includes: Substrate handling queuing, and processing for at least 50 wafers (150mm in diameter)o Pump in load lock, transfer to chamber, return to loadlock, Vento Atmospheric pump down of loadlock to facilitate chamber transfer in less than 10 minutes Configured with four (4) gas lines (for N2, O2, Ar, and He) Substrate heating and rotationo Operating with a temperature range of operation of at least room temperature to 800 degrees Celsius Depositiono General requirement: All deposited films adhere to the substrates with no indication of film delamination, pitting, or cracking.o Verify DC and pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify DC and pulse DC operation using Molybdenum (Mo) sputter sources Substrate - Si / SiO2 (500nm) Film thickness - 200 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify reactive operation for the deposition of SiO2 using a Si sputter sources Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using SiO2 sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using Silicon Nitride (Si3N4) sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.9 to 2.05 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify thick deposition of SiO2 coatings Substrate - Si Film thickness - 2000 nm (Note: ultimate goal would be 5 to7 microns) Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify multilayer coating process with SiO2 and Si3N4 sputter sources Substrate - Si SiO2 layer thickness - 200nm Si3N4 layer thickness - 50nm Total layers - 10 starting with Si3N4 coating Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify graded simultaneous co-sputtering using Si and copper (Cu) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up Deposition ends with Cu at a set power and Si at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify graded simultaneous co-sputtering using Si, copper (Cu) and Aluminum (Al) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up until Si and Cu reach 50% set power Cu is held at 50%set power, while Al is power is slowly ramped up and Si is slowly ramped down until Si is at zero power and Al is at 50% set power Cu is slowly ramped down and Al is slowly ramped up Deposition ends with Al at a set power and Cu at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify dual sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify triple sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify dual sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify triple sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Deposition uniformity Wafer-to-wafer uniformity (minimum 10 wafers) using Ti sputter source Wafer-to-wafer uniformity (minimum 10 wafers) using SiO2 sputter source Average thickness uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Average thickness uniformity on 200mm substrate less than 6% as measured by a ellipsometry, reflectometry, or step height profilometry5.3 The Government Technical Representative reserves the right to witness the acceptance testing procedure at ARL. The Contractor shall notify the Government Technical Representative two (2) weeks before the post-installation acceptance testing date. 6. Post-installation Acceptance Tests ReportThe Contractor shall submit a post-installation acceptance tests report to the Government Technical Representative outlining the results of the acceptance tests within one (1) week after completion of the post-installation acceptance. The Government will approve the post-installation acceptance tests report within one (1) week of receiving the post-installation acceptance tests report
W911QX12R0032
Department of the Army Materiel Command Army Contracting Command Aberdeen Proving Ground
Award Notice 1/1
8/28/12, 3:18 PM
5
1
Mod #
Description
ReasonForModification
Federal Obligation
Date
P00002
ADMIN MOD TO CORRECT THE COMMERCIAL INTERIM PAYMENT AMOUNTS
Other Administrative Action
$0
11/8/12
P00001
MODIFICATION TO ADJUST THE COMMERCIAL INTERIM PAYMENT SCHEDULE
Other Administrative Action
$0
10/11/12
Not listed
MULTITARGET SPUTTERING SYSTEM
Not listed
$344.9k
9/28/12