This contract was awarded by the Defense Advanced Research Projects Agency (DARPA) to Agnitron Technology, Inc., a for-profit Subchapter S Corporation. The contract, valued at $1,975,918.00, is for research and development services to develop innovative approaches for enhanced doping and low-resistance contacts in aluminum nitride (AlN) diodes. This effort is part of DARPA's Ultra-Wide BandGap Semiconductors (UWBGS) program, which aims to develop foundational ultra-wide bandgap semiconductor materials and electrical contacts. The contract is a Definitive Contract with a Cost Plus Fixed Fee pricing type and has an ultimate completion date of August 11, 2027. The original solicitation was posted as a Pre-Solicitation under NAICS code 541712 and PSC code Y1P, and did not have a set-aside designation.
Generated 8/8/24, 9:46 AM