Innovative approaches for enhanced doping and low-resistance contacts in ALN diodes
Active Definitive Contract Awarded Last action
- Contract number
- 140D0424C0048
- Awardee
-
Agnitron Technology, Inc. UEI NGDVGM4G1YM4
- Awarding agency
-
Interior Business Center
Office of Policy Management and Budget, Department of the Interior
- Obligated
- $1,413,769
Award facts
- Opportunity
-
- Ultra-Wide BandGap Semiconductors (UWBGS) Pre-Solicitation · HR001123S0051 · Posted Sep 29, 2023
- Contract value 69% obligated
-
- $1,413,769.18 Current, with exercised options
- $2,046,827.18 Potential, with all options
- Completion date 69% complete
- Current and potential, with all options
- Funding agency
- Defense Advanced Research Projects Agency Department of Defense
- NAICS code
- 541715 Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)
- PSC
- AJ11 General Science And Technology R&D Services; General Science And Technology; Basic Research
- Set-aside
- No set-aside
- Competition
- Full and Open Competition · 25 offers Negotiated Proposal / Quote
- Pricing
- Cost Plus Fixed Fee
- Place of performance
- Chanhassen, MN 55317, USA
- Legislative mandates
-
- Other statutory authority
Award details come from SAM.gov/FPDS.
Transactions
| Action | Obligated | Date |
|---|---|---|
| Supplemental Agreement for work within scope | $70,909 | |
| Supplemental Agreement for work within scope | $0 | |
| Funding Only Action | $337,136 | |
| Funding Only Action | $428,357 | |
| Original award | $577,367 |
About this award
The Defense Advanced Research Projects Agency awarded a $2,046,827 definitive contract to Agnitron Technology, Inc. for innovative approaches to enhanced doping and low-resistance contacts in aluminum nitride diodes on August 12, 2024, with an ultimate completion date of October 11, 2027.
The contract is priced on a cost-plus-fixed-fee basis with no set-aside. Work is performed in Chanhassen, Minnesota. The originating solicitation, Broad Agency Announcement HR001123S0051, sought proposals under DARPA's Ultra-Wide BandGap Semiconductors program to develop foundational ultra-wide bandgap semiconductor materials and electrical contacts, with evaluation criteria including scientific and technical merit, mission relevance, and cost realism. Technical performance targets include substrate defect density below 1E4 cm⁻², doping efficiency exceeding 90%, and diode characteristics with thermal conductivity of 300 W/m-K, breakdown field of 10 MV/cm, and cutoff frequency of 100 GHz. NAICS code 541712 (Research and Development in Physical, Engineering, and Life Sciences) and PSC code Y1P apply.
Quick answers
Who was awarded contract 140D0424C0048?
140D0424C0048 was awarded to Agnitron Technology, Inc. by Interior Business Center (Office of Policy Management and Budget) on August 12, 2024.
How much is contract 140D0424C0048 worth?
The government has obligated $1,413,769 on 140D0424C0048. Its potential value, with all options, is $2,046,827.
Which agency awarded contract 140D0424C0048?
Interior Business Center (Office of Policy Management and Budget) awarded 140D0424C0048, with funding from Defense Advanced Research Projects Agency (Department of Defense).
Was contract 140D0424C0048 competed?
The extent of competition for 140D0424C0048 was full and open competition. The government received 25 offers.
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