Ultra-Wide BandGap Semiconductors (UWBGS)

The Defense Advanced Research Projects Agency seeks proposals through Broad Agency Announcement HR001123S0051 to develop foundational ultra-wide bandgap semiconductor materials and electrical contacts under the Ultra-Wide BandGap Semiconductors program. The program includes two technical areas, the first focused on developing large-diameter, low-defect substrates and the second on device layers, junctions, and contact resistance. Proposals will be evaluated based on scientific and technical merit, mission relevance, and cost realism. The deadline for proposals is December 15, 2023.

There is no set-aside designation. The solicitation falls under NAICS code 541712 and PSC code Y1P for physical science research and development for defense technologies. Current contractors in this field include Northrop Grumman, Lockheed Martin, and Raytheon. Budget and award values are undisclosed, though the program seeks to develop scalable technologies over multiple phases and years. Metrics include substrate defect density below 1E4 cm^-2, doping efficiency over 90%, and diode characteristics exceeding thermal conductivity of 300 W/m-K, breakdown field of 10 MV/cm, and cutoff frequency of 100 GHz.