Transphorm, Inc.
Goleta, CA Transphorm Technology Part of Renesas Electronics America Inc.
- UEI
- CURGZRUXNHK3
- CAGE
- 4R2L6
- Primary NAICS
- 334413 Semiconductor and Related Device Manufacturing
- SAM.gov registration
- Active through
Company facts
- Self-certified in SAM.gov
- Entity structure
- Corporate Entity (Not Tax Exempt)
- Other NAICS codes in SAM.gov
- Corporate family
-
-
Parent
FMJWLUNJDER4
-
Parent
FMJWLUNJDER4
- SAM.gov registration date
- Physical address
- 75 Castilian Dr, Goleta, CA 93117, USA
- Website
- renesas.com
- Founded
- 2002
- Employees
- 10K-50K
- Estimated annual revenue
- $250M-$500M
- Industry
-
- Information Technology
- Semiconductors & Semiconductor Equipment
- Semiconductors
- SIC code
- 36 Electronic & Other Electric Equipment
- Profiles
Registration and certifications come from SAM.gov and the SBA; company details from public web sources. Updated .
Contract obligations by fiscal year
| Fiscal year | Obligated |
|---|---|
| FY2027 To date | $0 |
| FY2026 | $0 |
| FY2025 | $0 |
| FY2024 | $503,811 |
Contract awards
Grant awards
Grant subawards
| Prime recipient | Prime award | Amount | Awarded |
|---|---|---|---|
| Illinois Institute Of Technology | DEAR0000890 | $869,785 |
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About the company
Transphorm, Inc. is a manufacturer of goods and global semiconductor company that develops fully qualified 650V GaN power devices for high voltage power conversion applications. Through past prime federal contract awards, Transphorm has conducted research and development to advance power electronics technologies relevant to the Defense Advanced Research Projects Agency's work, under a $1 million cost-plus-fixed-fee contract set aside for small businesses. Transphorm has also provided goods to prime contractors HRL Laboratories and Teledyne Scientific & Imaging in the form of n-polar GaN wafers and n-polar GaN HEMT epitaxy wafers to support their federal contracts.
Through federal grant sub-awards, Transphorm has prototyped four quadrant switches for use in current source inverters for motor drives and solid-state circuit breakers. They have also conducted research to demonstrate 1200V GaN power switches using planar GaN HEMT structures for electric vehicles and renewable energy systems. This involves developing multi-field-plate structures for high voltage management and back-end processing solutions for thermal management and separation of GaN/sapphire devices. The sub-awards supported projects at Illinois Institute of Technology and other universities.
Quick answers
Is Transphorm, Inc. registered in SAM.gov?
Yes. Transphorm, Inc.'s SAM.gov registration is active through March 18, 2027.
How much has Transphorm, Inc. received in federal contracts?
Federal contracts obligated $503,811 to Transphorm, Inc. in fiscal years 2023 through 2027.
What is Transphorm, Inc.'s most recent federal award?
Transphorm, Inc.'s most recent federal contract award is DARPA small business innovation research program (sbir) phase II effort entitled, "n-polar GAN/sapphire for MM-wave… (W31P4Q21C0009), from Aviation and Missile Command (AMC), on September 2, 2021.
On GovTribe
See Transphorm, Inc.'s full federal record
- Federal contract awards
- Federal grant awards
- Subcontracting relationships
- Funding analysis by agency, NAICS and set-aside
- Similar vendors