TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination

Closed Special Notice Posted

Solicitation number
IL-13828
Agency
Responses due
Set-aside
No set-aside

Opportunity facts

NAICS code
334413 Semiconductor and Related Device Manufacturing
Place of performance
Livermore, California, United States
Points of contact

Notice details come from SAM.gov. Updated .

About this opportunity

Lawrence Livermore National Laboratory (LLNL), operated by Lawrence Livermore National Security LLC under contract with the U.S. Department of Energy, has issued a Special Notice seeking industry partners to collaborate on developing its Semiconductor Opening Switch technology with pre-pulses elimination. This notice represents a technology transfer opportunity rather than a procurement, focusing on LLNL's novel SOS diode structure that addresses performance limitations in current high-power pulse diodes. The technology involves a specialized n-type silicon wafer with optimized dopant concentration profiles and an additional n-region layer designed to suppress unwanted pre-pulses. Current state-of-the-art Semiconductor Opening Switches are used to generate high-power laser light, x-rays, and neutron pulses but suffer from performance degradation due to pre-pulses with long duration and slow rise times. LLNL has developed and filed patent protection for this improved SOS diode structure that effectively eliminates these pre-pulses while increasing peak voltage and reducing pulse rise time.

The primary objective of this Special Notice is to identify industry partners with demonstrated capability to commercialize LLNL's SOS technology and bring it to market for applications in pulsed-power physics, compact high voltage pulse generators, and high power electronics. Companies interested in participating must submit either electronic or written statements of interest by August 7, 2025, including their company information, point of contact details, and descriptions of relevant corporate expertise and facilities. The technology is currently at Technology Readiness Level 3-5, with patent protection already filed, indicating it has moved beyond initial concept but requires further development for commercial viability. Eligible contractors should have experience in semiconductor manufacturing and related device development, as indicated by the NAICS code 334413 for Semiconductor and Related Device Manufacturing. LLNL emphasizes that all licensing activities will be conducted under strict nondisclosure policies to protect proprietary information, and the collaboration aims to provide licensees with competitive advantages in the marketplace.

Notice text

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination.

Background:

A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds.  Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses.  One of their drawbacks however is that their performance is compromised by the presence of pre-pulses.  These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device.  There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses.

Description:

LLNL developed a novel SOS diode structure starting with a n-type silicon wafer.  On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure.  Crucially, an extra n-region is introduced to the structure to address pre-pulses.  The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping.  The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time.  This approach has been validated in optimization simulations. 

Advantages/Benefits:

  • Value Proposition:  Improved performance of SOS diodes
  • Vital for compact high voltage pulse generators

Potential Applications: 

  • Pulsed-power physics
  • Compact high voltage pulse generators
  • High power electronics

Development Status: 

Current stage of technology development: TRL ☐ 0-2     ☒ 3-5     ☐ 5-9

LLNL has filed for patent protection on this invention.

LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. 

Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process.

Note:  THIS IS NOT A PROCUREMENT.  Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following:

  1. Company Name and address.
  2. The name, address, and telephone number of a point of contact.
  3. A description of corporate expertise and/or facilities relevant to commercializing this technology.

Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination.

The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below.

Written responses should be directed to:

Lawrence Livermore National Laboratory

Innovation and Partnerships Office

P.O. Box 808, L-779

Livermore, CA  94551-0808

Attention:   IL-13828

On GovTribe

Work this opportunity

  • Track it in your pipeline
  • Find teaming partners
  • Similar opportunities
  • Ask GovTribe AI about this opportunity