Gallium Nitride Diode Wafer Fabrication
Awarded Award Notice Posted
- Solicitation number
- 80GRC025PA002
- Agency
- Glenn Research Center National Aeronautics and Space Administration
- Awarded
- to Raytheon Company
- Set-aside
- No set-aside
Opportunity facts
- Contract number
- 80GRC025P0002 Federal contract award
- NAICS code
- 334413 Semiconductor and Related Device Manufacturing
- Place of performance
- Tewksbury, Massachusetts, United States
- Points of contact
-
- Ian Park ian.park@nasa.gov (216) 433-3130
- Hunter Butkovic hunter.c.butkovic@nasa.gov (216) 433-3110
Notice details come from SAM.gov. Updated .
About this opportunity
NASA Glenn Research Center awarded a sole-source contract worth $273,770 to Raytheon Company for the fabrication of specialized Gallium Nitride (GaN) diode wafers. The contract requires the production of 7,000 custom diodes at approximately $40 per diode, specifically designed for high-power microwave systems that will support power distribution on Lunar and Martian surfaces. Delivery of the GaN wafer fabrication run is required by September 2026, with the diodes being critical components for NASA's space exploration power systems. The sole-source award was justified based on Raytheon's unique capabilities and previously demonstrated advanced GaN diode performance, including achieving the highest recorded power density of 780mW/cm² for RF rectifying circuits above 2.45 GHz.
Notice text
Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030.
The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.
Awarded contract 80GRC025P0002 to RAYTHEON COMPANY for 273770.00 on 2025-09-26.
Attachments
| File | Type | Posted |
|---|---|---|
| JOFOC 80GRC025P0002 Signed Final.pdf |
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