DMEA PPP Epi Growth Opportunities

The Defense Microelectronics Activity (DMEA), a defense agency, has issued a Special Notice seeking to establish a collaborative partnership for advanced Silicon Carbide (SiC) epitaxial growth technology. The agency is specifically targeting commercial entities with substantial technical expertise in SiC epitaxy manufacturing. Through this opportunity, DMEA aims to develop a secure supply chain for high-quality, thick epitaxial SiC wafers that can be utilized in Department of Defense (DoD) programs. The notice represents a strategic initiative to advance microelectronics manufacturing capabilities through potential collaborative arrangements such as Cooperative Research and Development Agreements (CRADA), Commercial Service agreements, Public-Private Partnerships, or Other Transactions. This Special Notice was posted on March 31, 2025, with a response deadline of May 28, 2025.

The primary objectives of this partnership include establishing a reliable source of high-quality epitaxial SiC on 150- or 200mm wafers and exploring potential technology commercialization opportunities. Interested contractors must submit a concise white paper limited to five pages, detailing their qualifications, proposed partnership model, capital and equipment capabilities, business case, market analysis, financial analysis, and risk management strategy. DMEA will provide approximately 20,000 sq.ft of newly constructed cleanroom space to support the partnership. Technical specifications include requirements for 150mm 4H-SiC substrates, with an initial goal of manufacturing epitaxial wafers featuring 3m-250m thickness, n-type and p-type doping, and achieving >65% usable area on a 150mm wafer. Eligible participants should demonstrate advanced technical knowledge and practical experience in SiC epitaxy, with the potential for significant technological and commercial impact in DoD microelectronics applications.