Brand Name Sole Source for one (1) Simcenter Microelectronics Research and Development (Micred) transient thermal testing system (T3STER).

Closed Solicitation Posted

Solicitation number
W911QX24Q0076
Agency
Responses due
Set-aside
No set-aside

Opportunity facts

Place of performance
Adelphi, Maryland 20783, United States

Notice details come from SAM.gov. Updated .

About this opportunity

The Department of the Army Materiel Command Army Contracting Command Aberdeen Proving Ground is seeking to procure one (1) Simcenter microelectronics Research and Development (Micred) transient thermal testing system (T3STER). The system must have a 19-inch 4 Rack Unit form factor, support SiC MOSFETs and IGBTs, have 20W heating current outputs, 240A capability, and four simultaneous measurement probes. The Government is utilizing a sole source procurement strategy, justifying the use of the Simcenter Micred T3STER system from the manufacturer, Siemens Industry Incorporated, through the authorized reseller Oasis Sales, Incorporated. Offers are due within five business days after the solicitation posting via email.

This will be a commercial, firm-fixed price contract awarded under simplified acquisition procedures. The place of performance is the U.S. Army Research Laboratory in Adelphi, MD. There is no set-aside used for this opportunity. The applicable NAICS code is 334413 - Semiconductor and Related Device Manufacturing, and the PSC code is 6625 - Electrical and Electronic Properties Measuring and Testing Instruments. The estimated total value of the procurement is [REDACTED]. Delivery of the system is required by April 15, 2024.

Notice text

The Government requires one (1) Simcenter microelectronics Research and Development (Micred) transient thermal testing system (T3STER) with the following characteristics:

  • Shall include a frame with a 19-inch (”) four (4) Rack Unit (U) form factor, power supply, and system controller.
  • Shall be capable of external linking.
  • Shall support three (3) pin devices and gate switching for silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors (MOSFETS) and insulated-gate bipolar transistor (IGBT)
  • Shall have two (2) heating current outputs capable of 20 watts (W), with a maximum voltage (V) output of 40V.
    • Shall be capable of 240 amps (A) at 11 V input.
  • Shall be capable of four (4) simultaneous measurement probes with one (1) microsecond sampling rate and 0.01 °C temperature resolution.
  • Shall be compatible with T3STER Master Software to define package structure functions with high resolution.
  • Shall be capable of recording both heating and cooling mode measurements.
  • Shall include calibration hardware including but not limited to a thermoelectric cooler calibration stand, thermistors, and resistance temperature detectors (RTDs) for temperature verification.
  • Shall include installation.
  • Shall include training documentation for employees.
  • Shall include freight, shipping, and handling.

Files

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