Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies
Closed Special Notice Posted
- Solicitation number
- BA-1552
- Agency
-
Department of Energy
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 334413 Semiconductor and Related Device Manufacturing
- PSC
- AJ13 General Science & Technology R&D Svcs; General Science & Technology; Experimental Development
- Place of performance
- Idaho Falls, Idaho 83401, United States
- Points of contact
Notice details come from SAM.gov. Updated .
About this opportunity
The Department of Energy has published a Special Notice offering licensing opportunities for high-quality superconducting zirconium nitride (ZrN) thin films developed via molecular beam epitaxy (MBE). Researchers at Idaho National Laboratory (INL) have successfully established the deposition parameters necessary to create superior-quality, single-crystal ZrN superconducting films with novel methods for inducing unconventional superconductivity. The technology represents a significant advancement over existing superconducting thin films, which are typically polycrystalline, and has not previously been deposited using MBE methodology. This Special Notice is categorized under Semiconductor and Related Device Manufacturing (NAICS 334413) and General Science & Technology Research & Development Services (PSC AJ13). The opportunity was posted on October 23, 2025, with an application deadline of April 20, 2026. No specific set-asides are utilized for this licensing opportunity.
The primary objective of this licensing opportunity is to enable private sector development and commercialization of ZrN superconducting thin films for quantum computing applications, epitaxial superconducting heterostructures, and advanced research and development initiatives. The technology offers significant advantages including superior crystalline quality, tunable performance metrics through controlled stoichiometry, and the ability to create atomic-layer-precision structures at wafer scale. Key benefits include minimized impurities and defects, higher critical temperatures, and the potential for fault-tolerant quantum computing through unconventional superconductivity induction. While the Special Notice does not explicitly detail specific eligibility criteria or contractor requirements, interested organizations should note the April 20, 2026 deadline for submissions. The opportunity is designed to facilitate the transition of INL's proprietary superconducting ZrN technology to industrial partners capable of scaling production and bringing quantum computing and advanced superconducting applications to market.
Notice text
High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies
Description
INL researchers have successfully established the parameters necessary for the deposition of high-quality superconducting zirconium nitride (ZrN) using molecular beam epitaxy (MBE). Key parameters include growth rate, temperature, flux ratios of zirconium (Zr) and nitrogen (N), and the choice of substrate. These parameters significantly impact the crystalline quality of the ZrN, which in turn affects its physical properties. Additionally, novel methods have been developed to induce unconventional superconductivity in conventional superconductors like ZrN.
Key Benefits
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Superior Quality: MBE allows for fine-tuned growth parameters, resulting in top-quality, single-crystal ZrN superconducting films.
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Unconventional Superconductivity: Methods for inducing unconventional superconductivity in ZrN have been conceptualized, potentially enabling more fault-tolerant computing.
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Novel Application: ZrN has not previously been deposited using MBE, offering a unique advantage over existing superconducting thin films, which are often polycrystalline.
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Tunable Impurities, Defects, and stoichiometry: The precise control during deposition minimizes impurities and defects, enabling better performance and higher critical temperatures. Direct control of stoichiometry allows for tunable performance metrics such as critical field and temperature.
Market Applications
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Quantum Computing: Superconducting ZrN thin films can be used as platforms for superconducting qubits, a key component in the development of quantum computers.
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Epitaxial Superconducting Heterostructures: The high-quality, high-uniformity films can be used to create advanced structures needed for unconventional superconducting technologies with atomic layer precision at wafer scale.
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Research and Development: The technology can be utilized by researchers and companies focused on advancing superconducting materials and their applications.
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Fault-Tolerant Computing: Unconventional superconducting schemes based on this technology could lead to more robust and fault-tolerant computing systems.
This technology represents a significant advancement in the field of superconducting materials, with broad implications for quantum computing and other high-tech applications.
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