Virtually Imaged Phased Arrays.docx
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- Solicitation number
- NB305000-26-00165
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This is a Sources Sought Notice and Request for Information issued by the National Institute of Standards and Technology (NIST) under the Department of Commerce for market research purposes. The notice is not a formal solicitation and will not result in an award. NIST seeks to identify potential commercial sources capable of supplying Virtually Imaged Phased Arrays (VIPAs) to support the CHIPS Metrology Program's RF Waveform and Rapid Frequency-Comb Diagnostics for Plasma Etching project within the Chemical Science Division of NIST's Material Measurement Laboratory. The objective is to enable time-resolved frequency comb spectroscopy of plasma etching processes for real-time monitoring and intelligent design of next-generation plasma etching processes.
The procurement requires six units total across three wavelength ranges: two units of 2600–3100 nm VIPAs, two units of 3000–3700 nm VIPAs, and two units of 3600–4600 nm VIPAs. All units must be constructed of calcium fluoride substrate with specific optical and physical specifications including input mirror reflectivity ≥99%, output mirror reflectivity ≥96%, line width ≤75 MHz, free spectral range ≥6 GHz, finesse ≥130, length ≥100 mm, and width ≥25 mm. The contract type will be Firm Fixed Price with FOB Destination delivery terms. Interested firms must submit responses demonstrating capability to meet specifications by February 4, 2026, at 4:00 PM ET to Contract Specialist Ranae Armstrong (ranae.armstrong@nist.gov) and Contracting Officer Don Collie (Donald.collie@nist.gov). Written questions must be submitted by February 2, 2026, at 4:00 PM ET to the same email addresses. Responses should include company information, technical documentation, points of contact, teaming partners if applicable, and must not contain proprietary information.
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Request for Information/Sources Sought Notice Commercial Supply Contract Type: Firm Fixed Price Title: Sources Sought Notice for a Virtually Imaged Phased Arrays (VIPAs) Notice ID Number: NB305000-26-00165
PURPOSE
The purpose of this sources sought notice is to conduct market research and identify potential sources of commercial products/services that satisfy the Government’s anticipated needs. This notice shall not be construed as a Request for Quote. Respondents are advised that the U.S. Government will not pay for information or administrative costs incurred in the response to this notice. All costs associated with responding to the notice will be solely at the interested party’s expense. Not responding to this notice does not preclude participation in any future RFQ or other solicitation (if any are issued). This is a market survey, not a pre-solicitation notice. There is no formal solicitation available at this time. No award will be made as a result of this market survey. If a formal solicitation is generated at a later date, a pre-solicitation notice will be published. Respondents will not be notified of the results of this survey, or results of information submitted.
BACKGROUND
The semiconductor supply chain is global, specialized, and interconnected. Chipmakers do business with thousands of individual suppliers that provide the highly complex materials and tools used to produce semiconductors. To address the lack of full visibility into the semiconductors markets supply chain and R&D ecosystem gaps NIST will conduct measurement science, or metrology, critical to the development of new materials, packaging, and production methods in chip manufacturing.
The CHIPS Metrology Program includes research in Grand Challenge 5, Modeling/Simulating Semiconductor Manufacturing Processes. To address this Grand Challenge, the project RF Waveform and Rapid Frequency-Comb Diagnostics for Plasma Etching seeks to purchase Virtually Imaged Phased Arrays to perform time-resolved frequency comb spectroscopy on gas-phase samples and plasma samples. The project is led by the Chemical Science Division (CSD) of the NIST Material Measurement Laboratory (MML), the nation’s premier metrology laboratory for measurement science, standards, technology, and intelligent data in the area of chemical sciences.
Objective: The systems will enable time-resolved frequency comb spectroscopy of plasma etching in a research-grade plasma reactor, enabling reliable in-situ monitoring of plasma chemistry and real-time data generation for intelligent design of next-generation plasma etching processes.
SCOPE
The Contractor shall deliver a quantity of two (2) Virtually Imaged Phased Arrays (VIPA), 2600 nm to 3100 nm, a quantity of two (2) Virtually Imaged Phased Arrays (VIPA), 3000 nm to 3700 nm, and a quantity of two (2) Virtually Imaged Phased Arrays (VIPA), 3600 nm to 4600 nm, inclusive of warranty and FOB Destination delivery terms (or equivalent INCOTERM such as DDP).
MINIMUM REQUIREMENTS
Description: Virtually Imaged Phased Arrays (VIPA), 2600 nm to 3100 nm Quantity: Two (2) A. Technical Specifications
a. Optical input wavelength from 2600 nm to 3100 nm
b. Substrate material shall be calcium fluoride, CaF2
c. VIPA thickness shall be greater than 10 mm and less than 20 mm
d. VIPA shall comprise an entrance region with anti-reflection coating, a highly reflective input mirror, and a partially reflective output mirror
e. Input mirror power reflectivity shall be greater than or equal to 99 %
f. Output mirror power reflectivity shall be greater than or equal to 96 %
g. VIPA line width shall be less than or equal to 75 MHz at 2850 nm
i. VIPA line width shall be best effort for 50 MHz at 2850 nm
h. VIPA free spectral range shall be greater than or equal to 6 GHz
i. VIPA finesse shall be greater than or equal to 130
j. VIPA length shall be greater than or equal to 100 mm
k. VIPA width shall be greater than or equal to 25 mm
Description: Virtually Imaged Phased Arrays (VIPA), 3000 nm to 3700 nm Quantity: Two (2) A. Technical Specifications
a. Optical input wavelength from 3000 nm to 3700 nm
b. Substrate material shall be calcium fluoride, CaF2
c. VIPA thickness shall be greater than 10 mm and less than 20 mm
d. VIPA shall comprise an entrance region with anti-reflection coating, a highly reflective input mirror, and a partially reflective output mirror
e. Input mirror power reflectivity shall be greater than or equal to 99 %
f. Output mirror power reflectivity shall be greater than or equal to 96 %
g. VIPA line width shall be less than or equal to 75 MHz at 3350 nm
i. VIPA line width shall be best effort for 50 MHz at 3350 nm
h. VIPA free spectral range shall be greater than or equal to 6 GHz
i. VIPA finesse shall be greater than or equal to 130
j. VIPA length shall be greater than or equal to 100 mm
k. VIPA width shall be greater than or equal to 25 mm
Description: Virtually Imaged Phased Arrays (VIPA), 3600 nm to 4600 nm Quantity: Two (2) A. Technical Specifications
a. Optical input wavelength from 3600 nm to 4600 nm
b. Substrate material shall be calcium fluoride, CaF2
c. VIPA thickness shall be greater than 10 mm and less than 20 mm
d. VIPA shall comprise an entrance region with anti-reflection coating, a highly reflective input mirror, and a partially reflective output mirror
e. Input mirror power reflectivity shall be greater than or equal to 99 %
f. Output mirror power reflectivity shall be greater than or equal to 96 %
g. VIPA line width shall be less than or equal to 75 MHz at 4100 nm
i. VIPA line width shall be best effort for 50 MHz at 4100 nm
h. VIPA free spectral range shall be greater than or equal to 6 GHz
i. VIPA finesse shall be greater than or equal to 130
j. VIPA length shall be greater than or equal to 100 mm
k. VIPA width shall be greater than or equal to 25 mm
NOTICE RESPONSE
Interested firms/companies are encouraged to respond to this notice by submitting documentation that clearly demonstrates how the minimum requirements and technical specifications will be met. Response which merely repeat the minimum requirements, and technical specifications without providing demonstration of how the minimum requirements and technical specifications will be met, will not be considered or evaluated by the government. Responses can demonstrate their capabilities to meet the requirements and specifications described above by providing brochures, manuals, reports, demonstration videos, other technical data, and identification of current customers.
In responding to this notice, please DO NOT PROVIDE PROPRIETARY INFORMATION. In addition to the technical documentation, the response must include the following:
· Company name and address
· Point of Contact for questions and/or clarifications, including telephone number and email address
· Teaming partners (if applicable)
· For supplies – If the supply is a commercial off the shelf item, modified commercial off the shelf item, or prototype.
· Any additional information as deemed pertinent by the respondent.
The Government will accept written questions by email to Contract Specialist Ranae Armstrong at ranae.armstrong@nist.gov and Contracting Officer Don Collie at Donald.collie@nist.gov. Questions must be submitted by 02/02/26, 4:00pm, ET to receive a government response. Telephone and faxed inquiries will not be accepted.
Interested responses must be submitted to Contract Specialist Ranae Armstrong at ranae.armstrong@nist.gov and Contracting Officer Don Collie at Donald.collie@nist.gov no later than 02/04/26, 4:00pm, ET. Telephone and faxed responses will not be accepted.
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