Tab 04 Specifications.pdf
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- 4H-Silicon Carbide 100 mm Epi wafers
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This is a technical specification document detailing requirements for 4H-Silicon Carbide (SiC) 100mm Epiwafers for NASA/NSSC. The specifications call for single crystal 4H polytype wafers with a 100mm (±0.5mm) diameter and 0.3mm (±0.1mm) thickness, featuring both sides polished and laser-patterned identification on the back near the primary wafer flat. The wafers must be nitrogen-doped (n-type) with specific resistivity requirements and contain five precisely defined epitaxial layers with strict doping concentrations and thicknesses.
The technical requirements include detailed specifications for surface quality (70% usable area with 3mm edge exclusion), defect limitations, and compliance with SEMI specification M55-4-0315. The five epitaxial layers must be deposited in a specific order, with layers #1 through #4 grown in a single epitaxial growth run. The layers range from p-type aluminum-doped to n-type homoepitaxial SiC layers, with precisely defined thicknesses between 0.05μm and 6.0μm and varying doping concentrations from 5x10¹⁵ cm⁻³ to potentially 1x10²¹ cm⁻³. The epilayer front wafer face must be the silicon face.
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| File | Type | Posted |
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| Tab 07 Capability Statement SAM.pdf |
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4H-Silicon Carbide (SiC) 100mm Epiwafer Specifications
The silicon carbide wafers with epitaxial layers shall meet the following specifications:
(a) Shall be a single crystal of the 4H polytype.
(b) Shall be round with a diameter of 100 mm ± 0.5 mm, and a thickness of 0.3 mm ± 0.1 mm, and with both sides polished.
(c) On the back of each wafer, identifying numbers/letters shall be produced by a laser patterning process near the primary wafer flat.
(d) Shall be nitrogen doped (n-type) with a resistivity less than 1 ohm-cm and with average micropipe density of less than 2 per square cm.
(e) At least 70% of the top surface area (with a 3 mm edge exclusion) shall be usable, i.e.,free of area defects including hexagonal platelets, foreign polytypes and orange peel as defined in SEMI specification
M55-4-0315.
(f) Shall be (with a 3 mm edge exclusion) entirely free of optically observable crack defects that are in excess of 5 mm in length.
(g) Shall have flats in conformance with SEMI specification M55-4-0315.
(h) On the front of each wafer, there shall be the following singe-crystal homoepitaxial SiC epilayers, specified.
(Layer #1) Deposited on top of the wafer substrate, a p-type aluminum-doped homoepitaxial SiC layer of
2 x 1018 cm-3 ± 1.0 x 1018 cm-3 of 4.0 ± 1 μm thickness.
(Layer #2) Deposited on top of the Layer #1 p-layer described above, a p-type homoepitaxial SiC layer of less than 5 x 1015 cm-3 of 6.0 ± 1 μm thickness. Lower doping is desired on a "best effort" basis, but the entire layer shall remain of p-type conductivity.
(Layer #3) Deposited on top of Layer #2 above, an n-type homoepitaxial SiC layer of 9.0 x 1016 cm-3 ± 2 x 1016 cm-3 of 0.35 ± 0.05 μm thickness.
(Transition Layer #4) Deposited on top of the Layer #3, a p-type homoepitaxial transition SiC layer of greater than 1.7 x 1018 cm-3 of 0.05 ± 0.02 μm thickness.
(Layer #5) Deposited on top of the Layer #4, a p-type homoepitaxial SiC layer of greater than 2.0 x 1019 cm-3 of 0.2 ± 0.02 μm thickness. Higher doping is desired (up to 1 x 1021 cm-3 ) on a "best effort" basis.
(i) Layers #1 through #4 described above in part (h) shall be grown in a single epitaxial growth run.
(j) The epilayer (front) wafer face shall be the silicon face.
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