SOW.pdf
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- DIODE FOUNDRY SERVICE
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- 80NSSC232619
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STATEMENT OF WORK
THSiRU - Terahertz Heterodyne Spectrometer For In-Situ Resource Utilization
Diode Fabrication at Chalmers University of Technology
PR: ___PR 4200832619__________________
Period of performance: May 15, 2023 – August 29, 2023 Delivery Address:
NASA Goddard Space Flight Center, Building 33, Room F203 8800 Greenbelt Rd, Greenbelt, MD 20771
Background THSiRU, Terahertz Heterodyne Spectrometer for In Situ Resource Utilization, is a two-year technology development project funded by the Early Career Initiative (ECI) Program appointed by NASA Headquarters. This project aims to mature Terahertz (THz) instruments for future lunar missions, including the Artemis program. THSiRU shall develop a compact and power-efficient laser-desorption heterodyne spectrometer to detect H2O, OH and/or HDO trapped in the lunar regolith. The science objectives for THSiRU are listed below:
1. Determine if the Moon’s regolith and exosphere are hydrated by detection or non-detection of pure rotational transitions of H2O at 2.64 THz, OH at 2.51 THz, and HDO at 2.60 THz.
2. Discriminate between models of indigenous or exogenous water.
3. Evaluate the total volatile and solid phase water budgets.
Scope THSiRU core system contains a spectrometer designed to detect volatiles from the lunar subsurface by ablating the surface using a green laser (1064 nm). The spectral line will be digitized using an ASIC spectrometer for nearly a real-time and post-process analysis. A block diagram of the system is shown in Figure 1.
Requirements
- Fabricating terahertz circuit on a 2um thick GaAs substrate
- Schottky diode anode diameter is <0.5um
- Schottky diode finger length is ~4um
- Beamlead technology to support the circuit
- DC performance testing
Deliverables or Delivery Schedule -Dummy fabrication – four weeks -Completing device fabrication in eight weeks -I-V testing and delivery ten weeks
Place of Performance
Period of Performance from the award date
Tasks Performance Period and delivery Dummy circuit fabrication Four weeks
Fabrication of Device Three weeks I-V testing and delivery Three weeks
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