SATPC0042410 Tab 04 4 SOW.pdf

This is a Statement of Work for the fabrication of silicon carbide (SiC) pressure and temperature sensors on 4-inch diameter, 350-micron thick single crystal 4H-SiC wafers. The objective is to fabricate hierarchical layers through metallization, silicon dioxide deposition, and wet and dry etching processes to produce functional sensor devices.

The work encompasses 19 distinct process steps with specified sequence numbers totaling approximately 100 individual process runs. Key processes include quartz deposition (4 sequences), photoresist application and baking (7 sequences each), UV exposure and development (7 sequences each), wet etching of aluminum (3 sequences), dry etching of silicon dioxide (4 sequences), multiple metallization layers involving titanium, platinum, tantalum silicide, and gold depositions (varying from 1-2 sequences each), plasma and solvent cleaning (3-8 sequences), rapid thermal annealing at 900-1000°C under vacuum (2 sequences), and metal etching (6 sequences). The vendor will collaborate with the customer to refine specific fabrication parameters and procedures. Final product delivery is required within 20 weeks from the receipt of the purchase order.