SATPC0035193 Tab 04 4 Spec Sheet.pdf
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- Attached to
- DRPA Sensor Chips Federal contract opportunity
- Solicitation number
- 80NSSC24871577Q
About this file
This document is a Specification for the Packaging of on-chip integrated silicon carbide pressure and RTD sensors for sensing evaluation at 900°C in an atmospheric environment. It details the requirements for packaging 15 SiC pressure sensors to withstand pressures up to 500 psi and temperatures up to 900°C for a minimum of one hour. The preferred packaging architecture is a 7-through-hole via with a central reference cavity fabricated in an aluminum nitride (AlN) header, which is brazed to a Kovar tube. The package must be leak-free and have low leakage current between the pins and the AlN header substrate at 900°C. Each packaged sensor must be tested at room temperature prior to shipment.
The related federal contract opportunity is a Special Notice from NASA/NSSC for DRPA Sensor Chips, which it intends to procure through a sole source contract with Sienna Technologies under FAR 13.106-1(b)(1)(i). NASA/GRC will be the procuring center, and the NAICS code is 334419. Interested organizations may submit their capabilities and qualifications to the identified point of contact by 6/10/2024, but the government has sole discretion in determining whether to conduct this procurement on a competitive basis.
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Text version
Specification for the Packaging of on‐chip integrated silicon carbide pressure and RTD sensors for sensing evaluation at 900 ℃ in atmospheric environment
Fifteen (15) SiC pressure sensors shall be packaged based on the specification below.
The components to be used for packaging the silicon carbide pressure sensors shall withstand pressure of up to 500 psi and temperature up to 900 oC for a minimum of one hour.
The preferred packaging architecture shall be based on the MEMS Direct Chip Attach concept similar to the one referenced in Fig. 20 of US patent 7,518,234.
The package shall be a 7‐through‐hole via with central reference cavity fabricated in the preferred aluminum nitride (AlN) header that is closest CTE matched to the SiC sensor material.
The diameter of the AlN header shall be 0.278” and the shoulder diameter to be
0.2465”.
The AlN header that houses the SiC sensor shall be brazed to Kovar tube with
OD=0.279” and ID=0.251” or any complementary low CTE material with low oxidization rate that would survive a minimum of 1 hour in air at 900 ℃.
The brazing material to braze the AlN header to the Kovar tube shall be non‐oxidizing or have low oxidation rate to survive a minimum of 1 hour in air at 900 ℃.
The brazing material to braze the AlN header to the Kovar tube shall be leak free during use for a minimum of 1 hour in air at 900 ℃. Leak rate lower than 6x10‐7 would be acceptable.
The leakage current between pins (Au or Pt) and the AlN header carrier substrate shall be no more than 0.1 µA (10 Vdc) at 900 oC.
The length of the Kovar tube shall be determined prior to packaging.
The Au or Pt pins shall extend out of the Kovar tube and the dam that is attached to it, and be rigidly secured at the backend of the Kovar tube with non‐electrically conducting high temperature rated ceramic paste.
Each packaged sensor shall be tested at room temperature prior to shipment.
In addition to Fig. 20 of US patent 7,518,234 as reference, an image of similar package is shown below. The AlN header is brazed to the Kovar tube, which in turn is brazed to the dam. The backend of the package is also shown.
File details come from the government source that posted it. Updated .