Diamond substrate requirements 9-2026.pdf
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- Diamond Substrate
- Solicitation number
- N0017326Q0401
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This document is a requirements specification for single crystal diamond substrates/wafers intended for semiconductor epilayer deposition and heterostructure device development. The requirement encompasses five distinct substrate types with specific crystallographic orientations and physical specifications.
The procurement calls for a total of 15 substrates across five categories: 3 Diamond (110) substrates, 3 Diamond (111) substrates, and 9 Diamond (100) substrates with varying miscut angles (4°, 5°, and 6°, with 3 units each). All substrates must be single crystal diamond with minimum dimensions of 5mm in diameter or side length for (110) and (111) types, and 7mm for all (100) variants. Thickness specifications are uniform across all types at 0.5mm to 1mm. Surface polishing requirements mandate average roughness below 1 nanometer on the primary polished surface, with a preference for Chemical Mechanical Polishing (CMP) to achieve roughness below 0.5 nanometers. The polished surfaces specified are (110) and (111) planes for their respective substrate types, while the (100) substrates with miscuts require (111) polished surfaces. No pricing terms, response dates, award dates, or federal agency information is provided in this requirements document.
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Requirements for Diamond Substrates/Wafers
This requirement is for single crystal diamond substrates/wafers for use to deposit semiconductor epilayer stacks and heterostructure device development. Three kinds of substrates are being requested and detailed below.
1. Quantity of 3, Diamond (110) substrates
a. Single crystal with primary cut along the (110) crystallographic plane
b. The size of the substrate/wafer should be no less than 5mm in diameter for a round substrate or along any side of a square substrate. The substrate should also have a thickness of at least 0.5 mm but no more than 1mm.
c. The (110) polished surface should have an average roughness < 1nm, but preferably a CMP-polished surface to < 0.5 nm.
2. Quantity of 3, Diamond (111) substrates
a. Single crystal with primary cut along the (111) crystallographic plane
b. The size of the substrate/wafer should be no less than 5mm in diameter for a round substrate or for any side along a square substrate. The substrate should also have a thickness of at least 0.5 mm but no more than 1mm.
c. The (111) polished surface should have an average roughness < 1nm, but preferably a CMP-polished surface to < 0.5 nm.
3. Quantity of 3, Diamond (100) substrate with 4° miscut
a. Single crystal with primary cut along the (100) crystallographic plane with a 4° miscut/offcut.
b. The size of the substrate/wafer should be no less than 7mm in diameter for a round substrate or for any side along a square substrate. The substrate should also have a thickness of at least 0.5 mm but no more than 1mm.
c. The (111) polished surface should have an average roughness < 1nm, but preferably a CMP-polished surface to < 0.5 nm.
4. Quantity of 3, Diamond (100) substrate with 5° miscut
a. Single crystal with primary cut along the (100) crystallographic plane with a 5° miscut/offcut.
b. The size of the substrate/wafer should be no less than 7mm in diameter for a round substrate or for any side along a square substrate. The substrate should also have a thickness of at least 0.5 mm but no more than 1mm.
c. The (111) polished surface should have an average roughness < 1nm, but preferably a CMP-polished surface to < 0.5 nm.
5. Quantity of 3, Diamond (100) substrate with 6° miscut
a. Single crystal with primary cut along the (100) crystallographic plane with a 6° miscut/offcut.
b. The size of the substrate/wafer should be no less than 7mm in diameter for a round substrate or for any side along a square substrate. The substrate should also have a thickness of at least 0.5 mm but no more than 1mm.
c. The (111) polished surface should have an average roughness < 1nm, but preferably a CMP-polished surface to < 0.5 nm.
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