QA_N0017324QDH01.pdf
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- Solicitation number
- N0017324QDH01
About this file
This document is a Questions and Answers (Q&A) related to the federal contract opportunity for a Dual Chamber Thin Film Sputter Deposition System solicited by the Naval Research Laboratory (NRL), which is a component of the Department of the Navy, Office of Naval Research.
The Q&A provides clarification on the technical specifications of the required system, including the purpose of the backsputtering capability, the advantages of normal incidence sputtering compared to confocal sputtering, and the ability to reconfigure the sputter gun magnets in-situ without removing the gun from the chamber. The system is required to have the capability to deposit dielectric and metallic thin films. The solicitation number is N0017324QDH01, and the closing date is not provided in this document.
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Other files
| File | Type | Posted |
|---|---|---|
| RFQ N0017324QDH01.pdf | ||
| 11-0067-24 SYSTEM SPECS Final.pdf |
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Q&A N0017324QDH01
1. Section 1.5 calls for the sample stage can perform backsputtering using RF ponetwork. wer supply and match unit. What is the purpose of having this backsputtering capability? Is it for removing surface oxide from Si wafer prior to growth? If so, could we propose an alternative configuration that removes surface oxides without backscattering?
Answer: The vendors who choose to propose to this requirement need to comply to the specifications in their entirety. Any vendor cannot meet the specifications will be considered unacceptable and not considered for award, per the RFQ.
2. What is advantage(s) of doing normal incident sputter deposition as described in 1.13 compared to confocial sputter deposition?
Answer: Normal incidence sputtering causes more of the deposited film material to arrive and land at right angles to the plane of the substrate that can influence the texture (the average crystalline orientation) of the resulting film. The performance of many films require particular crystallographic orientation relative to the growth direction. Two examples are c-axis oriented aluminum nitride (AlN) used in piezoelectric applications and surface acoustic wave devices. Another is the deposition of magnesium oxide (MgO) that acts as a tunnel barrier in magnetic tunnel junctions. This material requires the deposition of a (100) textured layer to promote the highest performance tunnel magnetoresistive devices. Normal incidence sputtering promotes growth of the proper crystallographic orientation in these films.
3. Section 2.4 states: Sputter guns shall be configured with modular magnet arrays allowing for balanced, unbalanced, magnetic material deposition modes and bakeable to 200C without reduction in performance. Modifications to change the mode of operation must be done without removing the gun from the chamber. Is this mean that magnets for the magnetron be reconfigurable in-situ and without removing the gun from the chamber ?
Answer: Yes, the gun magnets must be reconfigurable in-situ and without removing the gun from the chamber.
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