MRD - PIN Photodiode Detection.pdf
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- PIN Photodiode Detection Devices
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- COMBO-AFRL-RMZB-2026-0013
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This is a Minimum Requirements Document for PIN Photodiode Detection Devices issued by the Air Force Research Laboratory (AFRL), Sensors Directorate, Electro-Optical Electro-Physics Division (AFRL/RYMM) dated 10 July 2026.
AFRL/RYMM seeks to acquire six uncooled 2.4-micron wavelength InGaAs photodiodes to support advanced research, development, and evaluation of next-generation ladar and infrared sensing technologies. The procurement consists of three distinct configurations: (1) Quantity 2 devices with internal 50-ohm termination resistor, 105-micron core multimode fiber optic input, and female type K coaxial RF connector output; (2) Quantity 2 devices without internal termination resistor, same fiber and connector specifications; and (3) Quantity 2 devices without internal termination resistor in TO5 packaging with free-space optical coupling (no fiber attached). All devices must provide photon detection capability in the near-infrared wavelength region centered at approximately 2.4 microns and support laboratory characterization of optical detection performance for ladar and infrared sensing applications, including laser illumination, coherent optical sensing modes, and comparative testing against alternative wavelength photodiode technologies.
The devices must demonstrate high-sensitivity optical detection suitable for low-signal applications, stable and repeatable detector response for research environments, and high-frequency signal output capability for RF characterization. They must integrate with existing laboratory test equipment and photonics research configurations without significant workflow modifications. The acquisition requires manufacturer-provided technical documentation sufficient for installation and operation, available technical support, and standard warranty coverage for materials and workmanship defects. All necessary components and interfaces for operational use in laboratory environments must be included.
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Minimum Requirements Document
PIN Photodiode Detection Devices
10 July 2026
Background & Scope: The Air Force Research Laboratory, Sensors Directorate, Electro-Optical
Electro-Physics Division (AFRL/RYMM) conducts advanced research, development, and evaluation in photonics, laser detection and ranging (ladar), and infrared (IR) sensing technologies to support United States Air Force (USAF) tactical and strategic objectives. To advance emerging sensing architectures and next-generation ladar systems, AFRL/RYMM requires the capability to evaluate and characterize high-performance photodetectors operating within the near-infrared (NIR) spectrum.
Current laboratory infrastructure lacks the modern 2.4-micron (μm) photodiode detection technology necessary to evaluate detector performance, analyze noise characteristics, and resolve system integration challenges at this critical wavelength. Existing in-house detector assets operate at alternative wavelengths and cannot serve as sufficient baseline comparators.
Consequently, the laboratory cannot adequately model, analyze, or validate the performance characteristics required to develop next-generation 2-μm-class ladar systems.
Requirements/Salient Characteristics: This acquisition will provide photodiode detection devices capable of supporting experimental research, laboratory testing, and characterization activities involving optical detection at approximately 2.4 micron wavelengths. The devices will support analysis of laser illumination performance, coherent ladar modes of operation, range finding applications, detector noise characterization, and comparative performance assessments against photodiode technologies operating at alternative wavelengths. The acquisition will enhance AFRL/RYMM’s ability to independently assess advanced infrared detector technologies and support future sensor system development activities. The following minimum requirements must be met:
Quantity – 2 - Uncooled 2.4 Micron Wavelength InGaAs Photodiode having internal 50-ohm termination resistor with 105 um core multi-mode fiber optic input and female type
K coaxial RF connector output.
Quantity – 2 - Uncooled 2.4 Micron Wavelength InGaAs Photodiode having no internal termination resistor with 105 um core multi-mode fiber optic input and female type K coaxial RF connector output.
Quantity – 2 - Uncooled 2.4 Micron Wavelength InGaAs Photodiode having no internal termination resistor in a TO5 package with no fiber attached (free space).
1) Detection Capability:
• Must provide photon detection capability within the near infrared wavelength region centered around approximately 2.4 microns.
• Must support laboratory characterization and evaluation of optical detection performance for ladar and infrared sensing applications.
• Must support operation with laser illumination and coherent optical sensing modes.
• Must support comparative testing against photodiode technologies operating at alternative wavelengths.
2) Photodiode Performance Characteristics:
• Must provide high-sensitivity optical detection suitable for low-signal infrared sensing applications.
• Must support evaluation of detector noise effects and signal performance characteristics.
• Must provide stable and repeatable detector response suitable for research and development environments.
• Must support high-frequency signal output suitable for optical and RF characterization activities.
3) Optical Input & Coupling Requirements:
• Must support integration with optical fiber-based laboratory configurations and free-space optical testing environments.
• Must support multimode optical input configurations for infrared optical signal coupling.
• Must allow compatibility with standard laboratory optical interfaces and connectors.
4) System Integration & Compatibility:
• Must be compatible with existing laboratory test equipment and optical characterization systems.
• Must integrate into existing photonics and ladar research configurations without requiring significant modification to current workflows.
• Must support laboratory experimentation involving detector characterization, signal analysis, and performance validation.
5) Research & Evaluation Support:
• Must support independent government testing and characterization of near infrared photodiode technologies.
• Must enable performance assessment of emerging 2 µm wavelength detection capabilities for future sensor system applications.
• Must support analysis of implementation considerations, operational limitations, and performance tradeoffs associated with advanced infrared photodiode devices.
6) Reliability & Operational Requirements:
• Devices must be suitable for continuous laboratory operation during testing and experimentation activities.
• Must maintain stable performance characteristics throughout extended testing periods.
• Must include all necessary components and interfaces required for operational use within a laboratory environment.
7) Support, Warranty, & Documentation:
• Must include manufacturer-provided technical documentation sufficient for installation, operation, and characterization activities.
• Must include available manufacturer technical support.
• Must include standard warranty coverage for defects in materials and workmanship.
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