SPCE_Proposers_Day_Documents.pdf

Space Power Conversion Electronics (SPCE) Program Jason Woo, MTO

September 26 2022

Radiation tolerant power electronics with breakthrough conversion efficiency for space systems

Briefing prepare for SPCE program Proposers Day

DISTRIBUTION A: Approved for public release. Distribution unlimited.

SPCE Program Overview

DISTRIBUTION A: Approved for public release. Distribution unlimited. 3

Efficient, rad-hard power conversion is essential for DoD space missions

HV transistor performance attributes to ~80% of total loss in point of load power conversion efficiency

• Advanced node VLSI digital transistors have excellent radiation-tolerance

• But….high-voltage (HV) transistors prone to failure in space due to ion/proton radiation

• Voltage derating for single event burnout (SEB) mitigation

• Poor transistor switching performance

• Large transistor size preventing compact integration Microchip SA50-28 (2022)

Source: FoxPictures/Shutterstock Source: www.sstl.co.uk Source: Northrop Grumman

High-voltage Transistors in Radiation Environment

Voltage Derating for SEB Mitigation

• Poor transistor switching performance

• Large transistor size preventing compact integration

HV transistor SEB Failure

Jeroen van Duivenbode, ASML, Vermogenselektronica Event 2012

High-voltage (HV) transistor catastrophic failure due to energetic ions/protons in space

Single Event Burnout (SEB)

Physical damage due to Joule heating

Vmax : maximum operating voltage VBD : device breakdown voltage

FOM =1/(QGRon) Ron: transistor’s on-resistance QG: control-gate switching-charges

Transistor Vmax

Tr an si st or S w itc hi ng

F O

M

PO

L

Ef fic ie nc y

Space HV transistor

Terrestrial HV transistor

100 V

2X Derating

FOM

degradation

200 V

5.88

0.67 Vmax=VBD

Be tte r

Space High-voltage Transistors Today

FOM =1/(QGRon) Ron: transistor on resistance QG: control gate switching charges

*LDMOS: Lightly doped drain MOS transistor +GaN HEMT: Gallium-nitride high-electron mobility transistor

SOA Radiation-Tolerant POL Converter

Discrete silicon HV transistors

Discrete passive; gate-drive & control circuits

3”

2”

Microchip SA50-28 (2022)

Derated space HV transistors have poor performance SOA space POLs are bulky and have large wiring power loss

Voltage Derating for Space Environments

FOM (mΩ-1nC-1)

R ad ia tio n To le ra nc e

(M eV c m

2 / m g)

LEO requirement

GaN HEMT (experimental)

5X10-4 5X10-3

SPCE

(100 V)

GaN HEMT SEB GaN HEMT+

(EPC 100V)

Vmax=100V

Silicon

LDMOS*

(SOA)

Mizuta, et al., IEEE TNS 2018

Better

Space Power Conversion Electronics (SPCE) Program

2. Improved Size-Weight-and-Power (SWaP) Power density (W/in3)

50 (SOA) → 500

• Highly integrated

• Low wiring loss

Low Earth Orbit (LEO) requirement

SOA POL

POL 48V:1V conversion

55 60 65 70 75 80 85 90 POL Efficiency (%)

Ra di at io n To le ra nc e

(M eV c m

2 / m g)

SPCEHigh performance high-voltage transistors Integration

SPCE HV

transistors

SPCE integrated POL 1 cm

Gate-drive & control circuits High Q passives

G

D

S

G

D

S

1. Improved conversion efficiencyGoals:

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Technical Challenge 1:

Achieving a High Performance High-voltage Transistor that is Radiation-tolerant

• For SEB-safe radiation-tolerant operation, maximum operating voltage must be derated

• For a given Vmax, transistor switching FOM is severely degraded resulting in low performance

Radiation induced

SEB

G. Consentino et. al, 2014 IEEE Applied Power Electronics Conference

Infineon-IR, EPC Data sheets

40 80 120 160 200

10-1

10-2

10-3

10-4

Vmax (V)

SOA Space LDMOS

SOA Terrestrial LDMOS

Radiation GaN HEMT (experimental)

SPCE

Derating

FO

M m Ω

-1 nC

-1

Be tte r

DISTRIBUTION A: Approved for public release. Distribution unlimited. 8

Technical Challenge 2:

Achieving a Low-loss, High-voltage Integrated Circuit Technology that is Radiation-tolerant

• Radiation-tolerant single 100 V silicon LDMOS has large feature size and is not compatible with advanced microelectronics integration

• Mainstream integrated Bipolar-CMOS*-DMOS+ (BCD) power technology is not radiation tolerant

IEEE MTT-S IMS, 2011

*Complementary metal-oxide-semiconductor +Double-diffused metal-oxide-semiconductor 5 mm

Discrete LDMOS

2.5 mm

1.

m m

BCD-based POLHV DMOS

IEEE MTT-S IMS, 2011

Hak-Yun Kim, et. al., Electronics, 2021

Proposal Timeline

Program KickoffBAA

May ’23Sept ‘22

FY 2026FY 2022 FY 2023

CY 2022 CY 2023

FY 2024

CY 2026

FY 2025

CY 2024 CY 2025

FY 2027

CY 2027

Abstracts Due

Oct ‘22

Phase 3 – 12 mo.

Proposals Due

Dec ‘22

Phase 1 Review

Nov ‘24 Phase 2 Review

May ‘26

Phase 2 – 18 mo.Phase 1 – 20 mo.

Phase 3 Review

May ‘27

Important Dates

• Abstracts Due: Oct 18, 2022

• Abstract Feedback: Around beginning of Nov 2022

• FAQ Submission Deadline: Nov 14, 2022

• Proposal Due Date: Dec 6, 2022

• Estimated period of performance start: May 2023

BAA Coordinator: HR001122S0059@darpa.mil

Program Metrics

SPACE devices and POL deliverables will need to pass standard SEB radiation test meeting LEO requirement

(a) TA1 performers need to propose either or both types of device to meet the TA1/TC2 POL circuit metrics

(b) POL conversion efficiency is calculated based on 48 Vin, 1.5 Vout (Phase 2)/1.0 Vout (Phase3) , and 50 A Iout test conditions

(c) Vout with 48 Vin

Device FOM Enhancement

Integrated Devices

Low Loss POL Demo

Technical Area/ Technical Challenge

Device Type(a) Metric Unit Phase 1 Phase 2 Phase 3

TA1/TC1

Vmax=10V

1/QGRon mΩ-1nC-1

0.1 0.15 0.4

Vmax=100V 0.01 0.01 0.025

TA1/TC2

POL conversion efficiency(b) %

Simulation of Phase 3 metrics

75 85

Integration level measured by POL power density W/in3 250 500

Vout ripple mV <20 <15 Vout

(c) V 1.5 1.0

TA2/TC1 Vmax=10V 1/QGRon mΩ-1nC-1 0.25 0.5

DISTRIBUTION A: Approved for public release. Distribution unlimited. 11

Evaluation Criteria

1. Overall Scientific and Technical Merit The proposed technical approach is innovative, feasible, achievable, and complete. The proposed technical team has the expertise and experience to accomplish the proposed tasks. Task descriptions and associated technical elements provided are complete and in a logical sequence with all proposed deliverables clearly defined such that a final outcome that achieves the goal can be expected as a result of award. The proposal identifies major technical risks and planned mitigation efforts are clearly defined and feasible.

2. Potential Contribution and Relevance to the DARPA Mission The potential contributions of the proposed effort are relevant to the national technology base. Specifically, DARPA’s mission is to make pivotal early technology investments that create or prevent strategic surprise for U.S. National Security. The proposer clearly demonstrates its plans and capabilities to contribute to U.S. national security and U.S. technological capabilities. The evaluation will consider the proposer’s plans and capabilities to transition proposed technologies to U.S. national security applications and to U.S. industry.

3. Cost Realism The proposed costs are realistic for the technical and management approach and accurately reflect the technical goals and objectives of the solicitation. The proposed costs are consistent with the proposer's Statement of Work and reflect a sufficient understanding of the costs and level of effort needed to successfully accomplish the proposed technical approach. The costs for the prime proposer and proposed subawardees are substantiated by the details provided in the proposal.

4. Plans and Capability to Accomplish Technology Transition (TA1 only) The proposer clearly demonstrates its capability to transition the technology to the research, industrial, and/or operational military communities in such a way as to enhance U.S. defense. In addition, the evaluation will take into consideration the extent to which the proposed intellectual property (IP) rights structure will potentially impact the Government’s ability to transition the technology.

www.darpa.mil

Space Power Conversion Electronics (SPCE)

HR001122S0059

Proposers Day

September 26, 2022 Brian D. Nuckols

Contracting Officer DARPA Contracts Management Office

Distribution Statement A. Approved for Public Release; Distribution Unlimited.

Proposers Day Disclaimer

A copious amount of information is made available to potential proposers to clarify program goals/objectives and proposal preparation instructions.

However:

• Only the information/instructions in the BAA counts

• Proposals will only be evaluated in accordance with the instructions provided in the BAA

• Any response provided by the Government in the FAQ that’s different than what is provided in the BAA will be made formal by an amendment to the BAA

• Such responses will make note of an impending BAA amendment

Only a duly authorized Contracting Officer may obligate the Government

BAA Overview

BAAs allow for a variety of technical solutions

– The BAA defines the problem set, the proposer defines the solution (and SOW)

– Allows for multiple award instrument types:

Attachment 3 to BAA: SPCE Controlled Unclassified Information (CUI) Guide

Distribution Statement A. Approved for Public Release; Distribution Unlimited.

TA1

• Procurement Contract or Other Transaction

• Anticipated Funding Type: 6.2 (Applied Research)

Restricted research for all team members (prime or subcontractor)

TA2

• Procurement Contract, Other Transaction, Cooperative Agreement, or Grant

• Anticipated Funding Type: 6.2 (Applied Research)

Fundamental research for all team members (prime or subcontractor)

BAA Overview, Cont’d

DARPA Scientific Review Process

– Proposals are evaluated on individual merit and relevance as it relates to the stated research goals/objectives rather than against one another

– Selections will be made to proposers whose proposals are determined to be most advantageous to the Government, all factors considered, including potential contributions to research program and availability of funding

Government may select for negotiation all, some, one, or none of the proposals received Government may accept proposals in their entirety or select only portions thereof Government may elect to establish portions of proposal as options

BAA Process/Timeline

1. BAA published: 22 September

2. Proposers Day: 26 September

3. Abstracts Due: 18 October

4. Government Abstract Responses: ~ early November

5. FAQ Submission Deadline: 14 November

6. Proposals Due: 6 December

7. Proposals are checked for BAA compliance

Noncompliant proposals are not reviewed (and cannot be selected)

8. Government conducts Scientific Review Process

Clarification requests may be sent to various proposers

8. Government sends out notification letters: ~ February 2023

9. Contracts negotiated & awarded (performance start): ~ May 2023

(can assume 1 May 2023 for Pricing)

See BAA for complete date/time information Monitor SAM.gov for any BAA amendment(s)

Eligibility Issues

All interested/qualified sources may respond subject to the parameters outlined in

BAA

Foreign participants/resources may participate to the extent allowed by applicable Security Regulations, Export Control Laws, Non-Disclosure Agreements, etc.

FFRDCs and Government entities:

- Are not prohibited by the BAA from proposing

- Are, however, subject to applicable direct competition limitations

- Are, however, required to demonstrate eligibility (sponsor letter)

The burden to prove eligibility for all such team members rests with the proposer

All elements of a proposal (tech and cost, prime and subs – even FFRDC team members) must be included in the prime’s submission

Real and/or Perceived Conflicts of Interest:

- Identify any conflict/s

- If any are identified, a mitigation plan must be included

Proposal Abstracts (1 of 2)

Abstracts are strongly encouraged:

1. They minimize unnecessary effort in proposal preparation and review

2. They reduce the potential expense of preparing an out of scope proposal

The abstract provides a synopsis of the proposed project (tech and budget)

Government will reply by letter with one of two possible responses:

1. Encourage full proposal, and may provide feedback

2. Discourage full proposal, and will provide feedback

DARPA will not communicate further (verbally or in writing)

Regardless of DARPA’s response to an abstract, proposers may submit a full proposal

DARPA will review all full proposals submitted without regard to abstract recommendation/feedback

Distribution Statement A. Approved for Public Release; Distribution Unlimited. 8

Abstracts must include the following components:

• Cover Sheet

• Innovative Claims

• Technical Approach

• Deliverables

• Cost and Schedule

Submit UNCLASS submissions to the DARPA BAA Website (https://baa.darpa.mil) per the instructions in Section IV.C.2, “Abstract Submission Information,” of the BAA.

Do not submit to grants.gov

Proposal Abstracts (2 of 2)

Max of 5 pages

The total page limit does not include the cover sheet (required) or a submission letter (optional) https://baa.darpa.mil/

Full Proposal Ground Rules

KEY POINTS:

Two Technical Areas: TA1 and TA2

Two Technical Challenges per TA: TC1 and TC2 One proposal per TA (TA1, TA2) – address all phases and metrics and both TCs (a proposer can submit a proposal to both TAs) An organization/company/individual can be on multiple proposals

Submit unclassified proposals ONLY to the DARPA BAA Website (https://baa.darpa.mil)

Click “Finalize Full Proposal” button (otherwise you have not submitted) Submit grant/cooperative agreement proposals ONLY to grants.gov (https://www.grants.gov)

Is not a DARPA site/tool (we can’t answer questions) (give yourself time) Submit classified proposal addendum to DARPA per “Security Information” section of the BAA Do not submit classified proposals/information to the DARPA BAA Website

If unsure, please follow the instructions in the BAA for inquiring Propose to the program (goals, objectives, metrics, schedule, deliverables) the BAA has defined (per TA), not to the program you desire

Distribution Statement A. Approved for Public Release; Distribution Unlimited.

https://baa.darpa.mil/ https://www.grants.gov/

Volume 1: Technical/Management Proposal

– Be mindful of the page limitations (30 pages for TA1; 20 pages for TA2)

– Be sure to respond to all 12 of the required “Detailed Proposal Information” items

• Technical Approach – is the centerpiece of the technical proposal

• Statement of Work – Organize by Phase/Option, then by Tasks. Define all tasks (what you are doing, not how you are doing it) and deliverables (data, software, and material items, as applicable).

– Pay attention to key technical elements in the “Funding Opportunity Description” that must be addressed in all proposals

Volume 2: Cost Proposal

– No page limitations

– DARPA Standard Cost Proposal Spreadsheet (required for all instrument types)

– Fully detailed cost build-ups/estimates (Prime & Subcontractors)(All instrument types)

• Summary Cost Build-up: By phase and performer fiscal year

• Detailed Cost Build-up: By phase, technical task, and month

– Subcontractor proposals are required (to include SOW)

– No Rough Order of Magnitudes (ROMs)

– Certificate of Current Cost/Pricing Data will be required for any procurement contract award meeting the prescribed threshold (i.e., the adequate price competition exemption does not apply to BAAs)

Full Proposal Preparation

Volume 2: Cost Proposal

– DARPA Standard Cost Proposal Spreadsheet The Government requires that proposers use the provided MS ExcelTM DARPA Standard Cost Proposal Spreadsheet in the development of their cost proposals. A customized cost proposal spreadsheet may be an attachment to this solicitation. If not, the spreadsheet can be found on the DARPA website at http://www.darpa.mil/work-with-us/contract-management (under “Resources” on the right-hand side of the webpage). All tabs and tables in the cost proposal spreadsheet should be developed in an editable format with calculation formulas intact to allow traceability of the cost proposal. This cost proposal spreadsheet should be used by the prime organization and all subcontractors. In addition to using the cost proposal spreadsheet, the cost proposal still must include all other items required in this announcement that are not covered by the editable spreadsheet. Subcontractor cost proposal spreadsheets may be submitted directly to the Government by the proposed subcontractor via e-mail to the address in Part I of this solicitation. Using the provided cost proposal spreadsheet will assist the Government in a rapid analysis of your proposed costs and, if your proposal is selected for a potential award, speed up the negotiation and award execution process.

Use the single TA spreadsheet Do not make changes that are specifically prohibited by the instructions Questions are welcomed. Please direct them to costproposal@darpa.mil

Distribution Statement A. Approved for Public Release; Distribution Unlimited.

Full Proposal Preparation, cont’d http://www.darpa.mil/work-with-us/contract-management

Data Rights

Government desires as few restrictions as possible - however….

If asserting less than Unlimited Rights (e.g., Restrictions):

– Provide and justify basis of assertions using the prescribed format

– Explain how each item will be used to support the proposed research project

– Explain how the Government will be able to reach its program goals (including technology transition)

The proposer (prime) must submit a Data Rights Cert covering the entire team (prime and subcontractors), as applicable Provide a Data Rights Cert no matter the instrument type being proposed This information is assessed during evaluations (barriers to transition)

Pitfalls That Delay Proposal Review or Result in Non-Conforming

Failure to submit proposal on time - noncompliant!

– Proposal due date and BAA closing date are the same – so, late is late!

Failure to submit using the correct mechanism - noncompliant!

– Unclassified proposals ONLY to DARPA BAA website

– Grant/Cooperative Agreement proposals ONLY to grants.gov

– Classified proposals/information ONLY per “Security Information” section of the BAA

Failure to submit both proposal volumes - noncompliant!

– OT proposals must also include a full cost volume (Cost Realism is an evaluation criterion for all proposals)

– OT proposals must also include a detailed list of payment milestones (Milestone Plan)

Pages beyond the page limitation (tech prop) - pages will not be reviewed

ROM/s instead of full subcontract cost proposal/s - noncompliant!

– “I didn’t have time to get the subcontract proposal/s” will not change the outcome

– “My subcontractor/s would not give me a proposal” will not change the outcome

Proposing to more than one TA in a single proposal – noncompliant!

Missing FFRDC or Government Entity cost proposal – noncompliant!

Communications

Prior to Receipt of Proposals (Solicitation Phase): Follow instructions in

BAA

Typically handled through the FAQ, but see BAA exceptions (e.g., security)

After Receipt of Proposals/Prior to Selections (Scientific Review Phase):

Limited to Contracting Officer or BAA Coordinator (with approval) to address clarifications requested by the review team Proposal cannot be changed in response to clarification requests

After Selection/Prior to Award (Negotiation Phase): Negotiations are conducted by the Contracting Officer PM and/or COR typically tasked with finalizing the SOW (with PI) PM and/or COR typically involved in any technical discussions (i.e., partial selection discussions) Pre-award costs will not be reimbursed unless a pre-award cost agreement is negotiated prior to award

Informal Feedback Sessions (Post Selection): May be requested/provided once the selection(s) are made

– If made on a timely basis (~2 wks after letter), all requests will be accepted

Referenced Links http://www.darpa.mil/work-with-us/contract-management#SolicitationContracting (General DARPA contract management information) (DARPA Standard Cost Proposal Spreadsheet) http://www.darpa.mil/work-with-us/additional-baa (general BAA info pertaining to all instrument types) http://www.darpa.mil/work-with-us/procurementcontracts (info pertaining to contracts) https://acquisitioninnovation.darpa.mil/ (info pertaining to OTs) http://www.darpa.mil/work-with-us/reps-certs (DARPA-specific reps and certs for all instrument types) (Note August 2020 version of 52.204-24)(Similar is required for OTs as well)

Distribution Statement A. Approved for Public Release; Distribution Unlimited.

http://www.darpa.mil/work-with-us/contract-management#SolicitationContracting http://www.darpa.mil/work-with-us/additional-baa http://www.darpa.mil/work-with-us/procurementcontracts https://acquisitioninnovation.darpa.mil/ http://www.darpa.mil/work-with-us/reps-certs

SPCE Proposers Day Lightning Round

Name: Andrew Levy Organization: Alphacore Inc.

Address: 304 S. Rockford Dr., Tempe, AZ 85288

What we do:

• Design, implement, and test rad-hard/rad-tolerant power management ICs

• Experienced in multiple PMIC topologies, foundries, materials

• Small Business contracts with NASA, DoD, DoE, satellite integrator

Looking for Partners who will:

• Develop the silicon-based radiation-hard high-voltage transistors sought by the SPCE program

• Fabricate the semiconductor devices to implement PMICs

• Design and implement systems to leverage and transition the technology produced in the SPCE program

• Module, package and system level power converter design and manufacturers that can utilize Alphacore

ASICs in their core controllers

Email: andrew.levy@alphacoreinc.com Telephone: 503-320-5466 Website: www.alphacoreinc.com http://www.alphacoreinc.com/

DARPA-SN-22-60

Space Power Conversion Electronics - SPCE

Alphacore Teaming Profile

Contact information

Name: Andrew Levy

Organization: Alphacore, Inc.

Email: andrew.levy@alphacoreinc.com

Telephone: 503-320-5466

Mailing Address: 304 S. Rockford Drive, Tempe, AZ 85288

Website: www.alphacoreinc.com

Description of technical competencies

Alphacore is a Small Business with an outstanding track record of developing analog, mixed signal and RF microelectronics. Over the last few years, we have been awarded contracts to design and implement radiation-hardened power management integrated circuits for multiple U.S. Government agencies (e.g., Department of Energy, NASA, Air Force, Space Force, MDA) and commercial companies. The PMICs include switch-mode DC-DC converters for different point-of-load (POL) and intermediate bus converter

(IBC) applications, including high step-down ratios; GaN power stage drivers/controllers; space-based battery monitoring and management; rad-hard low-dropout regulators (LDOs); and a space-based on-wing solar array panel interface. We currently have two NASA, one Air Force, one MDA, and one commercial space ASIC program for PMICs with various topologies and specifications (e.g., TID tolerance to many megarads, a range of input and output voltages, high efficiency, high buck or boost ratios, etc.)

We carefully select the optimal fabrication process for our PMIC designs based on performance, device selection, inherent radiation tolerance, cost, foundry location, and more, and then deploy a range of radiation-hardened-by-design techniques as appropriate. We have in the past or are currently designing

PMICs in 350nm CMOS and 180nm (bulk CMOS and SOI).

Expertise desired from other teams/organizations

Alphacore seeks to collaborate with commercial or research organizations to complement our leading edge PMIC design skills. Partners will:

• Develop the silicon-based radiation-hard high-voltage transistors sought by the SPCE program

• Fabricate the semiconductor devices to implement PMICs http://www.alphacoreinc.com/

• Design and implement systems to leverage and transition the technology produced in the SPCE program

• Module, package and system level power converter design and manufacturers that can utilize

Alphacore ASICs in their core controllers

-GE NON-PUBLIC-

Contact: Biju Jacob, Principal Engineer - Semiconductors, GE Research , Niskayuna, NY (jacobb@ge.com)

Wide Bandgap Electronics for Harsh Environments

Extreme Integration with Power Overlay & Thermal Technologies

Radiation Tolerant & Efficient Power Devices

• *Developed radhard power SiC MOSFETs with 2x improvement in SEE threshold (NASA grant # NNX17AD05G (2017))

• **Pioneered MOSFET voltage de-rating guidelines for terrestrial cosmic ray radiation exposure (A Bolotnikov et al., 2015 IEEE APEC)

• ***Ongoing project with Vanderbilt University to develop radiation tolerant devices for NASA Lunar Surface Technology Research (Grant # 80NSSC 21K0766)

GE Power Conversion Electronics Technologies for Harsh Environments

GaN converters for harsh thermal environments up to power levels of 15kW

Packaging Flip chip

Wirebond

POL

Thin film substrate

Devices GaAs , GaN

SiC Diamond

Design/modeling

Thermal Ac�ve/Passive coolers

TGP

Design/modeling

System/ Applica�on

• 28,000 sq. ft. Class 100 Cleanroom, ISO 9001 Certified

• UWBG semiconductors, ASICs, embedded systems

• Ongoing effort on diamond processing towards developing radhard devices

• Prior initiatives for high reliability and space-based electronics for GE Aviation, Lockheed martin, AFRL

• Packaging of SiC and GaN into modules with Power Overlay technology

• 12V to 1V POL converters integrating bare die controller, MOSFET, and passives into a power converter block using Power Overlay technology for datacenter applications

• Near-junction, multi-level system thermal management

• Organic and inorganic packaging for harsh environment

*> 82% efficiency (12 Vin/ 1.2Vout, 12A) POL

30+ years of wide bandgap experience, electronics up to 800oC

SiC power MOSFETs SEB*** MOSFET voltage de-rating for Terrestrial Cosmic Rays**

SiC Power Module

Radhard GE SiC Power MOSFETs w/ onset VDS for sudden SEE under >1000V*

Radhard Device Design

Wafer Splits & Fabrication

Package + Radiation Test

Wafer Processing to chips

Power Overlay – thermal and weight optimized

DARPA Space Power Conversion Electronics (SPCE) Proposer Day

PROPOSER PROFILE

In response to: DARPA-SN-22-60 BAA Title: Space Power Conversion Electronics (SPCE)

Submitted to DARPA Microsystems Technology Office (MTO) 675 North Randolph Street Arlington, VA 22203-2114

Lead Organization GE Research One Research Circle, Niskayuna, NY 12309-1027 Large Business www.ge.com/research

Technical Contact Business Contact Biju Jacob, PhD Bradford Pantuck Principal Investigator Sr. Manager, External Technology Partnerships

(518) 387-7370 (571) 867-0714 potyrailo@ge.com bradford.pantuck@ge.com

Technical Competency: Radiation Tolerant Power Semiconductor Devices, Wide Bandgap Electronics for Harsh Environments, Extreme Integration with Power Overlay & Thermal Technologies

GE Research develops technologies that can create order of magnitude differentiation in customer products, especially those that are in highly constrained environments. We have over 30 years of wide bandgap electronics experience, including in SiC, GaAs, GaN and an ongoing effort in diamond. We have developed high reliability space-based electronics for GE Aviation, Lockheed Martin, and AFRL. GE Research pioneered voltage de-rating guidelines for radhard power MOSFETs. In a recent NASA project, we demonstrated 2X improvement in the onset VDS for sudden Single Event Effect induced by heavy ions. We have an active project with Vanderbilt university to develop radiation tolerant devices for the NASA Lunar Surface Technology Research program. We developed Power Overlay Packaging technology for SiC and GaN into modules and built a 12V to 1V POL converter, integrating bare die controller, MOSFET, and passives.

Expertise desired: We are open to partnerships with organizations that have insight into DARPA needs and missions; we are also open to partnerships with organizations having complementary technical capabilities in UWBG devices, systems integration, packaging, and other high priority MTO focus areas.

Date Submitted: September 22, 2022

Materials Matter www.kymatech.com

DARPA Space Power Conversion Electronics

Presenter contact:

Heather Splawn splawn@kymatech.com

Relevant capabilities:

• Gallium Nitride (GaN) and Gallium Oxide (Ga2O3) epitaxy for high voltage devices

• Focused on vertical device structures

• Current work on GaN and Ga2O3 diodes, including radiation tolerance measurements (SEE)

• High voltage GaN transistor work utilizing FinFET structure

Looking for partners with power converter design expertise

Contact for proposal partnerships:

contracts@kymatech.com

919-789-8880

Kyma Technologies, Inc.

www.kymatech.com

919-789-8880 Raleigh, NC contracts@kymatech.com

Technical Core Competencies: Wide bandgap semiconductor crystal growth processes, including Hydride Vapor Phase Epitaxy (HVPE), a cleaner and cheaper alternative to MOCVD growth, and Pulsed Sputtering Deposition (PVD). Additionally, Kyma is expert in characterizing crystalline materials and developing advanced device technologies from these materials.

Facilities: Kyma’s two facilities are located nearby each other in Raleigh, North Carolina. Kyma’s 8,000 sq.

ft. headquarters houses a suite of HVPE, PVD, and CVD crystal growth and characterization tools. Kyma’s 6,000 sq. ft. fabrication and device testing facility houses a backend materials processing (grinding, slicing, & polishing) facility, a full machine shop, and a high speed high power device testing laboratory. Kyma also uses partner facilities in the Research Triangle Area for device processing and advanced materials characterization.

Products: Kyma’s primary products are wide bandgap semiconductor materials, including:

• bulk GaN substrates

• bulk Ga2O3 substrates

• GaN epitaxy on bulk GaN with a wide range of doping and thickness capabilities

• Ga2O3 epitaxy on bulk Ga2O3 with a wide range of doping and thickness capabilities

• GaN, AlGaN, and AlN template substrates grown on sapphire and silicon

• High purity polycrystalline GaN

Related work:

• Radiation tolerance measurements (SEE) of GaN and Ga2O3 diodes

• High voltage GaN FinFETs

• p-type GaN for regrown diodes and transistors

• n++ GaN for improved contact resistance

• optically triggered GaN for EMI immune devices (PCSS) http://www.kymatech.com/ mailto:contracts@kymatech.com

Second Order Effects connect@soeffects.com 424.290.0617www.soeffects.com

PwrStack

Radiation tolerant

Power dense and 94% efficient

Stackable for high-voltages (>1 kV)

Fast turnaround times

Customizable

Certified

Ex. PwrStack w/ 6 PwrCells (3 series / 2 parallel)Single PwrCell

Single PwrCell

The stackable high-voltage power converter system tel:4242900617

Second Order Effects Second Order Effects is an engineering consultancy that turns uncertainty into fully functional hardware and software.

▪ > 130 aerospace projects

▪ > 45 aerospace clients

▪ > 90 employees

▪ 2 locations (El Segundo, CA, Redmond, WA)

▪ Founded in 2016

The engineer’s engineer connect@soeffects.com 424.290.0617www.soeffects.com

▪ Power Electronics

▪ RF

▪ Embedded Firmware

▪ Automated Test Systems

▪ EMI / EMC Design, Test and Validation

▪ Custom Magnetics

▪ Thermal Design

▪ Custom Sensors and Transducers

Select Capabilities

DARPA Microsystems Technology Office

Proposers Day Attendee Contact List

*Attendees listed gave permissions via the registration website to be included in this contact list.

Last Name First Name Company Email Address Ahlbin Jonathan MDA jonathan.ahlbin@mda.mil Ahmari David Coherent david.ahmari@coherent.com Albrecht John Michigan State University jalbrech@msu.edu Alles Michael Vanderbilt University mike.alles@vanderbilt.edu Andarawis Emad General Electric andarawis@ge.com Anderson Travis Naval Research Laboratory travis.anderson@nrl.navy.mil Arias-Purdue Andrea Teledyne Scientific Company andrea.arias-purdue@teledyne.com Bevilacqua John Cubic Aerospace LLC., dba Ibeos johnb@ibeos.com Bilodeau Maxwell Epirus Inc maxwellbilodeau@epirusinc.com Bisi Davide Transphorm dbisi@transphormusa.com Boutros Karim Boeing karim.s.boutros@boeing.com Buchanan Rory Onesemi Rory.Buchanan@onsemi.com Byrd Thomas Lockheed Martin tom.e.byrd@lmco.com chang michael Epirus, Inc michael.chang@epirusinc.com Chang Joseph Nanyang Tech University ejschang@ntu.edu.sg Chen Young-Kai Coherent Corp young-kai.chen@ii-vi.com Choubey Anupam Draper achoubey@draper.com Chowdhury Srabanti Stanford University srabanti@stanford.edu Chu Rongming The Pennsylvania State University romychu@gmail.com Chu Rongming The Pennsylvania State University ruc634@psu.edu Conte Matthew BAE Systems matthew.conte@baesystems.com Damoulakis John Cadence Design Systems jdamoula@cadence.com Dinkins Cody L3Harris cody.dinkins@l3harris.com Dirisu Afusat Intrinsix Corp adirisu@intrinsix.com Dwari Suman Raytheon Technologies suman.dwari@rtx.com Ebrish Mona Naval Research Lab/Vanderbilt University mona.ebrish@vanderbilt.edu Ebrish Mona NRL/VanderbiltUniversity monaebrish@gmail.com

Ejeckam Felix Akash Systems, Inc felix.ejeckam@akashsystems.com Fay Patrick University of Notre Dame pfay@nd.edu Fischer Howard Ferric Inc bud.fischer@ferric.com Fitzpatrick Jordan General Electric jordan.fitzpatrick@ge.com Fox Neil L3Harris neil.fox@l3harris.com Geary Kevin HRL Laboratories kgeary@hrl.com Goretta Kenneth Air Force Office of Scientific Research kenneth.goretta@us.af.mil Green Andrew Air Force Research Laboratory andrew.green.25@us.af.mil Grisafe Benjamin Northrop Grumman Benjamin.Grisafe@NGC.com Gupta Sachin Georgetown U Skg62@georgetown.edu Gupta Geetak Transphorm ggupta@transphormusa.com Hansford Wes Boeing wesley.p.hansford@boeing.com Harter Megan Intel Federal LLC megan.m.harter@intel.com Heckendorn Darin Cadence darin@cadence.com Hendrix Kate Second Order Effects kate@soeffects.com Hobart Karl US Naval Research Laboratory karl.hobart@nrl.navy.mil Hodek Matthew Michigan State University hodekmat@msu.edu Homiak Daniel Lockheed Martin daniel.homiak@lmco.com Howell Robert Northrop Grumman Mission Systems rs.howell@ngc.com Ildefonso Adrian Naval Research Laboratory adrian.ildefonsorosa@nrl.navy.mil Islam Ahmad Air Force Research Laboratory ahmad.islam.2@us.af.mil Iyer Subramanian UCLA s.s.iyer@ucla.edu Jacob Biju General Electric jacobb@ge.com Kane Avinash Collins Aerospace avinash.kane@collins.com Keast Craig MIT Lincoln Laboratory keast@ll.mit.edu Kelly Anthony Intel anthony.kelly@intel.com Knipfer Cody GXO, Inc. Cody@GXOInc.com Koch Brian Aerojet Rocketdyne Brian.koch@rocket.com

Kodzwa Paul Raytheon Technologies paul.kodzwa@rtx.com Kub Francis Naval Research Laboratory fritz.kub@nrl.navy.mil Lal Rakesh Transphorm rlal@transphormusa.com Lang Maik University of Tennessee mlang2@utk.edu Leach Jacob Kyma Technologies leach@kymatech.com Lee Tim Boeing timothy.t.lee@boeing.com Lee Cathy Qorvo cathy.lee@qorvo.com Lee Jaesung University of Texas at El Paso jlee20@utep.edu Levy Andrew Alphacore andrew.levy@alphacoreinc.com Liu Yunting Pennsylvania State University ypl5778@psu.edu Lu Wu The Ohio State University lu.173@osu.edu Lumb Matthew Polaris Semiconductor LLC mlumb@polarissemiconductor.com Mahadik Nadeem Naval Research Laboratory nadeem.mahadik@nrl.navy.mil Maknojia Aarzu SMI aarzu@strategicmi.com Maksimovic Dragan University of Colorado Boulder maksimov@colorado.edu Mateos Arturo Northrop Grumman arturo.mateos@ngc.com McMorrow Dale Naval Research Laboratory dale.mcmorrow@nrl.navy.mil Mehrotra Vivek Teledyne Scientific Company vivek.mehrotra@teledyne.com Meyer Joseph Ferric Inc. joe.meyer@ferric.com Moon Jeong HRL Laboratories jmoon@hrl.com Moser Neil USAF neil.moser@us.af.mil Mujahed Tariq Toyon Research Corporation tmujahed@toyon.com Munroe Brian The Charles Stark Draper Laboratory bmunroe@draper.com Murali Abishek Second Order Effects abishek@soeffects.com Norvell Nora Second Order Effects nora@soeffects.com Nowlin Nathan Sandia National Labs nnowlin@sandia.gov Oki Aaron Northrop Grumman Space Systems aaron.oki@ngc.com Palacios Tomas MIT tpalacios@mit.edu

Pantuck Bradford General Electric bradford.pantuck@ge.com Phillips Aidan Second Order Effects aidan@soeffects.com Radack Daniel IDA dradack@ida.org Rau Lavanya Epirus, Inc. lavanya@epirusinc.com Reese Bradley Raytheon Technologies bradley.a.reese@raytheon.com Riar Baljit Raytheon Technologies baljit.riar@rtx.com Roderick John HRL Laboratories jdroderick@hrl.com Saraf Summer Odyssey Semiconductor summer.saraf@odysseysemi.com Sathe Visvesh Georgia Institute of technology sathe@gatech.edu Saunier Paul Akash Systems Inc. paul.saunier@akashsystems.com Schrimpf Ron Vanderbilt University ron.schrimpf@vanderbilt.edu Schuette Michael Wolfspeed michael.schuette@wolfspeed.com Scott Tim DuPont tim.scott@dupont.com Seo Jung-Hun University at Buffalo, SUNY junghuns@buffalo.edu Sharifi Hasan HRL Laboratories hsharifi@hrl.com Shinohara Keisuke Teledyne Scientific Company keisuke.shinohara@teledyne.com SHU WEI Zero-Error Systems, Singapore weishu@zero-errorsystems.com Shumarayev Sergey Intel sergey.yuryevich.shumarayev@intel.com Singisetti Uttam University at Buffalo uttamsin@buffalo.edu Soendker Erich Aerojet Rocketdyne erich.soendker@rocket.com Speck James UCSB speck@ucsb.edu Splawn Heather Kyma Technologies splawn@kymatech.com Sturcken Noah Ferric, Inc. noah@ferric.com Suko Scott Northrop Grumman scott.suko@ngc.com Toth Timothy L3Harris timothy.toth@l3harris.com Turflinger Thomas The Aerospace Corporation THOMAS.L.TURFLINGER@AERO.ORG Tyler Matt Onesemi Matthew.Tyler@onsemi.com Walker Andy Collins Aerospace anders.walker@collins.com

Wanis Sam Northrop Grumman sam.wanis@ngc.com Watt Jeff Intel jeff.watt@intel.com Williams Aaron MDA aaron.williams@mda.mil Yang Chih-Kong UCLA yangck@ucla.edu Yi Lin Jet Propulsion Laboratory lin.yi@jpl.nasa.gov

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