Final SOW for DeepReactiveIonEtchingSystem V2.pdf

STATEMENT OF WORK

Deep Reactive Ion Etching System

PCN: 4200852300

Background The Goddard Space Flight Center (GSFC) Detector Development Laboratory (DDL) has a requirement to acquire an Inductively Coupled Plasma Deep Reactive Ion Etching (ICP DRIE) System for etching silicon wafers. The system is to be used to etch high-aspect-ratio (HAR) and nanoscale silicon structures built in the detector development laboratory. The system must be suitable for etching silicon wafers of 100, 150, and 200 mm diameter. The system shall include all necessary software and hardware to enable automated control of DRIE programs including both blanket-etch and Bosch-based processes. The vendor shall provide technical support of the equipment.

Objectives The objective of this project is to procure an ICP DRIE System for silicon wafer etching.

Scope The scope of this work includes production and delivery of an ICP DRIE. The ICP DRIE consists of a vacuum system, including both a process and load lock chamber, RF generators, a chiller, a computer control system electronics rack, fast switching mass flow controllers for high aspect-ratio etching of silicon micro- and nanoscale components. The cryogenic etching process will enable high-aspect-ratio (HAR) and nanoscale etching for development and production of nano detectors, circuits and devices. It will also provide high-aspect-ratio etching of components with minimal sidewall roughness and no residual polymer passivation. Additionally, the tool shall provide DRIE capability using the patented “Bosch” etching procedure for deep silicon etching using standard photoresist as a photomask. The Bosch process consists of rapid, sequential switching between anisotropic etching steps and passivation growth enabling very deep etching with vertical sidewalls and with high etching rates. The DRIE tool will enable new etching capabilities for improved performance of products manufactured in the DDL. The equipment is essential for nearly all device fabrication projects under development and in production in GSFC’s Detector System Branch. In particular, the equipment is needed for technology development and production for Cosmic Microwave Background Polarization technology, Microwave Kinetic Inductance Detectors, Far-Infrared Detectors, X-Ray Calorimeters, Large Format Magnetic Calorimeters, and Microfluidic Components, EUV and Far- IR/Sub-mm optical components such as micro-lens arrays, Through-Wafer MicroVias, blanket removal of excess silicon on support wafers, and MicroElectroMechanical Microshutters which are important to Goddard’s lines of business.

No prototypes or one-of-a-kind systems will be considered. The unit must be a current production model with at least 5 similar units working in the field. The unit must have an expected useful operational lifetime of 10 years or longer with factory support under future maintenance agreements for the selected model for a minimum of 10 years after commissioning. Example: No offers of systems which will be considered obsolete in less than 10 years and become irreparable within that time-period.

No offers from providers who do not currently have ICP DRIE systems in their product line shall be evaluated or considered.

No third-party or subawards. The Offeror must be capable of maintaining the equipment, sourcing parts, providing field service support, and process support, without third-party intervention.

GSFC reserves the right to require etched samples, demonstrating the ability to meet the acceptance criteria outlined in paragraph 10, prior to selection.

a) Design of the DRIE at the vendor location.

b) Approval of the design by the GSFC technical representative, communicating requirements to GSFC for installation including electrical power needs, gasses vacuum and other utilities as required.

c) Construction of the DRIE at the vendor facility.

d) Phase I in-factory acceptance testing observed by Goddard representatives.

e) Crating and Shipping of the unit to GSFC where the vendor’s personnel shall install it.

f) Installing, commissioning, demonstrating, and training of approximately three

GSFC personnel, on the Deep Reactive Ion Etcher at GSFC.

g) Phase II/acceptance testing of the DRIE at NASA.

Tasks or Requirements

Please respond to each of the requirements outlined below.

The Supplier shall provide a new Deep Reactive Ion Etching tool. The Supplier shall ensure that the DRIE is equipped with the following equipment and meets the following requirements prior to Acceptance of System:

Inductively Coupled Plasma Deep Reactive Ion Etching system description

1. A brand-new unit is required; no used equipment or accessories listed below are acceptable.

2. Safety: Meets current industry standard (semi S2) requirements for safety including the use of Emergency Off (EMO) panic buttons, shielding, and interlocks for hazardous areas protecting the user and maintenance personal from high voltages, pneumatics, and moving parts, and the tool from potential service failures.

3. Process Chamber

3.1. The process chamber shall be fabricated from aluminum

3.2. Shall include a KF fitting for Optical Endpoint Spectroscopy (OES) endpoint detection as well as necessary KF ports for vacuum gauging and rough pumping on the chamber.

3.3. Chamber liner kit for minimizing loss of reactive species to the solid surfaces within the chamber and easier and less frequent cleans of the chamber. The chamber liners shall include closed-loop controlled heating up to 120C.

4. Wafer fixturing, handling, and cooling

4.1. Electrostatic clamping with continuous contact compatible with both Bosch and blanket wafer etching for wafer sizes 100, 150 and 200 mm shall be provided.

The clamping mechanisms shall not obscure any portion of the top surface of the wafer, to allow etching to the edge of the wafer for blanket processes.

4.2. Ability to electrostatically clamp silicon wafers which are mounted to dielectric wafers, such as Pyrex or sapphire, with/or without back-side metallization, shall be a consideration.

4.3. Ease and speed of wafer size interchange as pertains to wafer clamping shall be a consideration. An accurate estimate of time required for wafer size interchange must be stated in the offer.

4.4. The lower electrode shall utilize electrostatic wafer clamping and helium-assisted heat transfer to adequately maintain wafer temperature control below 60C for all wafer sizes listed above.

4.5. All necessary exchange hardware required to accommodate 100, 150, and 200 mm wafers shall be detailed and quoted as non-optional equipment at the time of offer.

4.6. Wafer carrier trays, if available, for changing wafer sizes shall be considered, provided they adequately transfer both electrostatic clamping and He back-side cooling to the various wafer sizes, to maintain 60C or below wafer temperature, and provided that the construction is such that no portion of the top surface of the wafer is obscured.

4.7. A remotely controlled recirculating heater/chiller unit suitable for ultra-low electrode temperature control specified to – 20C to 45C and +/- 0.5C temperature stability. The heater/chiller shall provide a minimum of 1000W of cooling power at -10C at the lower electrode. The chiller shall be compatible with all wafer sizes listed above. The chiller and heat-exchange gas (He) shall be capable of maintaining a temperature of 60C or lower during high-power plasma processing.

4.8. A load lock system, with an automated process chamber insertion mechanism for single-wafer transfer, compatible with 100, 150 and 200 mm wafer diameters shall be included.

5. RF bias and generator system

5.1. A 5kW, 13.56 MHz, or higher frequency, inductively coupled (ICP) plasma source for generation of plasma in the process chamber as well as an automatching unit shall be provided. The source shall be fully adjustable by the user to run as low as 250W with stable plasma.

5.2. A high frequency (RF) 13.66MHz (nominal), 300W (or higher), RF generator and an automatching unit for etch shall be provided for the purpose of substrate bias to control sidewall profile and etch anisotropy. The source shall be fully adjustable by the user to run as low as the single digit watt range.

5.3. A low frequency (LF) 400kHz, 300W (or higher) generator and an automatching unit shall be provided, for the purpose of substrate bias when the etch is required to stop on a dielectric membrane. The LF generator minimizes notching due to charged dielectric etch stops such as silicon dioxide. The source shall be fully adjustable by the user to run as low as the single digit watt range.

5.4. Auto matching speed for all RF bias generators shall equilibrate with low reflected power in less than 0.5 sec during Bosch cycle switching.

6. Pumping System and gas flow controllers

6.1. The DRIE shall include a turbomolecular pump with >/= 2200 L/sec integrated to the process chamber. The turbo pump shall include ISO250 pipework, shall be compatible with corrosive gases, and shall include a magnetic bearing. Pumping speed through the turbo shall be controlled with an Automatic Pressure Control (APC) valve with open/close speeds < 0.9 sec and heated backing valve kit. The pump down components including the APC, turbo pumping line shall be heated to a minimum of 70C to reduce deposition in the pump down chain. The turbo pump shall provide process chamber base pressures less than 1x10-6 torr.

6.2. The DRIE process chamber shall include a dry pump for rough pumping the chamber and backing the turbo pump. The dry pump shall provide >/=1300 L/min pumping speed with an ISO 100 inlet flange. The pump shall be water cooled with temperature management. A pumping line sized to enable location of the dry pump in the sub-fab (40 ft below the tool) shall be included.

6.3. A load lock vacuum system shall be included with the tool. The load lock shall include a dry pump. The pump shall provide >/=1300 L/min pumping speed. A pumping line sized to enable location of the dry pump in the sub-fab (40 ft below the tool) shall be included.

6.4. Gas Lines. A close coupled gas pod for five (SF6, C4F8, O2, Ar, future expansion) non–hazardous process gases shall be included. Each gas shall be controlled with fast switching (</=0.1 ms response time) Mass Flow Controllers (MFC). Gas lines shall be ¼ inch stainless steel with VCR fittings. The MFC response time and distance to the chamber shall enable Bosch process control to better than 0.25 sec switching times.

7. Optical Endpoint Detection

7.1. The process chamber shall include a view port for optical endpoint spectroscopy

(OES) detection if the user includes an etch stopping layer in process.

7.2. The OES system shall monitor the optical emission of the plasma over the full spectrum (200 – 800 nm) through an endpoint detector. The endpoint detector shall be monitored by endpoint software integrated with the DRIE process control system and provide feedback based on the endpoint conditions set by the tool user.

The tool process control software shall communicate with the endpoint software to log plasma emission when a process starts if required by the user. The endpoint software shall communicate to the tool when the endpoint conditions are met. The spectrometer shall monitor multiple emission lines simultaneously. The spectrometer shall utilize low noise readout electronics and high efficiency optics.

The endpoint detection system shall not be affected by changes in ambient lighting in fabrication facility. The endpoint detector shall be compatible with the Bosch process, and shall provide accurate endpoint detection for etching active areas as small as 0.5% of the full area of the 200mm wafer.

8. Computer and DRIE interface

8.1. The DRIE shall include a computer interface for control of the system and logging of all process parameters. The make, model, and operating system specification of the computer shall be provided in response to this Statement of Work.

8.2. Windows 10, or later operating system

8.3. The DRIE interface shall control pump down of both the load lock and process chambers as well as automated loading and unloading of wafers.

8.4. The computer interface shall provide maintenance programs for testing the chamber leak up rates, helium backside cooling leak-up rates, gas line purge for bottle changes, and process data logging.

8.5. The computer interface shall include a recipe editor. The recipe editor shall provide fully automatic and manual control of both Bosch and Cryogenic etching procedures and variables such as coil power, platen power, platen frequency, chamber pressure, process gas flow rates, He flow rate and pressure, platen bias, and substrate temperature. Recipes with process variable ramping as a function of time shall be included. Bosch step times shall be adjustable to 10ms.

Multistep Bosch recipes shall be enabled, such as cycles including a single polymer deposition step followed by two or three etch and/or resist reduction steps. Recipes that allow constant variation in process parameters as a function of etch time or number of etch cycles shall be included. Recipe editing based on table layout and template-based recipe editing shall be included. Process parameter evolution shall be provided. Sample recipes shall be provided.

8.6. User log-in with password protection and multiple levels of control/maintenance access shall be provided to control access to high-level functions such as system tolerances, recipe modification, and valve controls.

8.7. Regulatory: The Offer must include an IpV6 Declaration of Conformance, and 508 compliance documentation.

9. DRIE Diagnostics and Logging

9.1. The DRIE shall incorporate a comprehensive internal hardware diagnostics system encompassing all DRIE subsystems. A complete hardware/software self-test is executed at each user logon. All faults, errors, and unusual conditions shall be logged by the control system.

9.2. Process data and parameters shall be logged as a function of time by the DRIE software diagnostics system.

10. Acceptance Criteria

10.1. Silicon etch rate > 5 microns/minute with 80% exposure. All wafer sizes.

10.2. Sidewall profile, 90 degrees, +/- 0.1 degree

10.3. No etch tilting near edge of wafer for any wafer sizes

10.4. Small (nm-scale) scallop size

10.5. Selectivity to photoresist, >/=100:1

10.6. Selectivity to silicon dioxide, >/= 200:1

10.7. Aspect ratio (Depth:Width) >/=50:1 with 80% exposure, >/=150:1 with 20% exposure

10.8. Etch silicon wafers, which are wax-bonded to a Pyrex or sapphire wafer, down to an oxide membrane and stop on the membrane without notching or wrinkling of the membrane due to wax softening. (Assume wax softening occurs at 70C)

10.9. Etch Non-Uniformity: </= 2% on 200 mm wafers with 80% exposure. To be calculated as (Max-Min)/(2xAverage), excluding 1 cm from edge, measured at 9 points.

10.10. Demonstrate any/or all of the above metrics on any/or all wafer sizes, to be chosen by NASA.

11. Facilities

11.1. The DRIE and all required components (PC, vacuum pumps, RF power generators, etc.) will operate from standard 208V/60Hz 3 phase plus neutral power.

11.2. Exterior surface parts shall be clean and free of grease or dust and compatible with operation in a Class 100 cleanroom environment.

12. Installation and Training

12.1. The price of the system will include installation at GSFC. Installation will include a demonstration that the tool is within compliance with the specifications. Installation and training shall be performed by a factory trained technician/engineer at NASA/GSFC. Thorough training on the use of the End Point Detection system shall be included.

12.2. The price of the system must include delivery of the instrument to Goddard Space Flight Center.

12.3. The Supplier shall install the system on-site at GSFC’s Detector Development Laboratory or another, designated, laboratory in NASA/GSFC’s Building 11 and provides operator training of the system. Together with GSFC technical personnel, the Supplier shall review the system, demonstrate and confirm that the system functions properly based on the specifications above

13. Documentation and Warranty

13.1. A full set of all written documentation will be provided. This will include user manuals or equivalent as well as copies of any software, and manuals for the software and End Point Detection will be included with the system, in addition to Maintenance Manuals and a full set of circuit schematics. This documentation must be received by GSFC with the system hardware and must be printed on cleanroom paper, in addition to electronic versions of all documentation.

13.2. The supplier will offer the GSFC at least the same warranty terms, including offers of extended warranties, offered to the public in customary commercial practice. The period of warranty will begin upon completion of training and acceptance of the system. Supplier shall provide an initial, full Warranty with this purchase of a minimum of 12 Months (Parts and Labor), guaranteed to meet factory specifications, to begin after in-house acceptance is complete. This warranty to be included in the price of the system.

IPv6 and 508 compliance

During the performance of this SOW the vendor will be providing IT hardware and software items. The Contractor shall ensure all such items are approved through the (IPv6) compliance and 508 Compliance. The Contractor shall not purchase IT hardware and software prior to approval.

The vendor shall ensure that products and services that use the Internet Protocol provide full feature functionality in both dual stack (IPv4 and IPv6) and IPv6-only environments in compliance with NIST USGv6 Testing Program, see Special Publication 500-267, A Profile for IPv6 in the U.S. Government Version 1.0. The vendor must notify the Contracting Officer of all contract specifications that do not comply with providing full feature functionality for IPv6 and act in accordance with the instructions of the Contracting Officer.

The contractor shall ensure that all NASA deliverables including systems, electronic communications, and any other information and communication technology be accessible to all people including those who use assistive technology as defined by Final Rule of Section 508 of the Rehabilitation Act. The rule may be found at: Revised 508 Standards and 255 Guidelines (access-board.gov)

Applicable Chapters are as follows:

508 Chapter 1: Application and Administration 508 Chapter 2: Scoping Chapter 3: Functional Performance Criteria Chapter 4: Hardware Chapter 5: Software Chapter 6: Support Documentation and Services Chapter 7: Referenced Standards.

14. Options

14.1. Spare turbomolecular pump

14.2. Spare roughing pump

14.3. Spare set of chamber liners

14.4. Spare parts of any consumables other than gases

Selection Criteria

The technical merit of the Offeror’s proposal will be evaluated in terms of by how much they exceed the technical specifications listed in this statement of work.

Selection will be dependent upon how well the Offeror responds to each of the requirements listed in the “Tasks or Requirements Section”, subtopic “Deep Reactive Ion Etcher tool Description” above. Each requirement must be addressed as to whether the Offeror Complies, or not, with the requirement. In the event of a failure to comply, the Offeror may state an alternative, if one is available, provided the alternative exceeds the requirement.

A minimum of three verifiable references, preferably within the United States, are required.

No offers from providers who do not currently have ICP DRIE systems in their production line shall be evaluated or considered.

No third-party or subawards. Example: The Offeror must be capable of maintaining/ servicing the equipment, sourcing parts, providing field service support, and process support, without third-party intervention.

Deliverables Deliver complete specified (as described above) system. Set up and install all components at GSFC Detector Development Laboratory.

1. Demonstrate system with specified performance/acceptance criteria (described in paragraph 10 above). Acceptance of system will be conditional upon successful demonstration of functions.

2. Provide user training for equipment operation, including End Point Detection.

3. Provide training on hardware change out for wafer size changes.

4. Equipment warranty on parts and labor for at least one year following installation, commissioning, training, and acceptance at the GSFC facility.

5. Operational manuals and maintenance manuals with circuit schematics and layouts printed on cleanroom paper, and electronic versions of all documentation.

6. Utility requirements, dimensions, and installation guide delivered to NASA within 2 weeks after receipt of order.

Delivery Schedule Within 12 months after receipt of order.

Government-Furnished Equipment and Government-Furnished Information No Government-furnished equipment (GPE) and Government-furnished information (GFI) will be required.

Security

The Supplier’s Representative, who will be installing the ICP DRIE and training NASA personnel, must be a US Citizen.

Place of Performance The construction of the Deep Reactive Ion Etching System shall be performed at the Supplier’s facilities.

In-factory acceptance shall be performed at the Supplier’s facilities.

The installation, commissioning, final acceptance testing, and training shall be performed at NASA/GSFC, Greenbelt, Maryland 20771.