Draft SOW - RIE - 07-22-2024.pdf
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- Solicitation number
- 80GRC024Q0003
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This document is a draft Statement of Work (SOW) for a Reactive Ion Etcher required by the NASA Glenn Research Center (GRC) at Lewis Field. The etcher must meet specific capabilities and specifications, including clean room compatibility, wafer size range, power requirements, chamber architecture, sputtering capabilities, temperature control, RF power, and pump flow rate. The etcher will be used by the Smart Sensing and Electronics System branch at NASA GRC for developing silicon carbide integrated circuits and sensors for aerospace applications.
The related federal contract opportunity is a pre-solicitation for the Reactive Ion Etcher procurement, with Solicitation Number 80GRC024Q0003. NASA GRC is seeking capability statements from interested parties, including small businesses and historically underutilized groups, to determine the appropriate level of competition and small business subcontracting goals. The North American Industry Classification System (NAICS) code for this procurement is 334516, Analytical Laboratory Instrument Manufacturing, with a 1,000-employee size standard. Responses are due by July 26th, 2024, at 1:00 PM Eastern Time.
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Specifications of Reactive Ion Etcher for Semiconductor processing
NASA Glenn Research Center (GRC) at Lewis Field needs a Reactive Ion Etcher for dry etching of a variety of materials including silicon dioxide, silicon nitride and platinum. The Smart
Sensing and Electronics System branch at NASA GRC focuses on developing silicon carbide
(SiC) integrated circuits (ICs) and sensors for aerospace applications.
The etcher should meet the following capabilities/specifications:
1. Clean room compatibility: ISO 5
2. Wafer size: from wafer pieces to 200 mm
3. Voltage: 208V 3-phase
4. Etch chamber architecture: Direct load system with vertically opening lid to enable ease of maintenance.
5. Symmetrical pumping of chamber to allow for uniform flow of process gases over the substrate.
6. Sputter etch kit comprising of easily removable stainless-steel liners to enable ease of maintenance.
7. High selectivity process kit
8. Variable electrode gap capability
9. Water-cooled lower electrode temperature control: +20 to +25deg.C
10. RF power: 13.56 MHz, 500W
11. Turbo pump flow rate: at least 200 L/s
12. Six (6) non-corrosive mass flow controllers with gas manifold and etch chamber integrated as a single unit.
13. Wafer etch uniformity: < +/-3% over 6-inch wafer; < +/-1% wafer-to-wafer for 6-inch wafers
14. As-shipped, the unit shall be able to fit in a 48-inch-wide elevator opening. Weight distribution of system shall not exceed 150lb/sq.ft.
15. Documented use in Government/academic/semiconductor R&D facilities
80GRC024Q0003
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