Attachment 1- Requirements for Nanocrystalline Diamond Reactor System.pdf
PDF 134 KB Posted
- Attached to
- Nanocrystalline Diamond Reactor System
- Solicitation number
- N00173-21-R-MR12
About this file
This document is a detailed Requirements specification for a Nanocrystalline Diamond Reactor System, targeting technical specifications for a sophisticated scientific instrument. The system must provide uniform plasma coverage over a 4" deposition area with diamond thickness uniformity within +/- 10%, featuring a water-cooled copper main stage with an integrated multizone resistively heated molybdenum sample stage capable of reaching 850 degrees Celsius. Key technical requirements include a 3.0 kW microwave power supply, multiple viewports, dual wavelength pyrometer, IR and optical cameras, 6 mass flow controllers, automated data collection, and comprehensive software control for temperature, pressure, and gas flow parameters.
The specification includes rigorous testing and acceptance criteria, such as Factory Acceptance Testing to be performed in the customer's presence, which involves system power-on checks, safety verifications, vacuum leak testing, and process gas introduction. The vendor must provide on-site support for initial equipment installation, demonstrate diamond film growth on a 4" Silicon substrate, and offer a minimum one-year warranty on non-consumable parts. Additionally, the vendor must operate a facility with at least 5 running CVD diamond reactors and demonstrate a capable service team. The final acceptance will occur on-site at NRL (Naval Research Laboratory), with a demonstrated diamond film growth over a minimum of 8 hours.
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Requirements for Nanocrystalline Diamond Reactor System
# Description
1 Uniform plasma coverage over 4" Deposition Area with demonstrated diamond thickness uniformity +/- 10% over 3.75" grown on 4" Silicon substrate
2 Water cooled copper main stage with integrated multizone resistively heated molybdenum sample stage
3 Molybdenum sample stage capable of achieving 850 degrees Celsius under 25 Torr and 100% hydrogen atmosphere (with no applied microwave Power)
4 Minimum 3.0 kW Microwave Power Supply capable of operating at a minimum power of 600 Watts continuously
5 Minimum of 4 angled viewports with line of sight to the deposition substrate and 1 viewport normal (90 degrees) to substrate surface
6 Dual wavelength pyrometer with temperature range from 600 C to 1400 C for spot measurements. Pyrometer must be calibrated with black body source by Vendor at factory prior to shipment with calibration certificate provided to customer
7 IR Camera with wavelength > 6 microns for thermal measurements of entire 4" wafer
8 Optical camera with mount for securing to viewport
9 Automated data collection and storage of infrared thermal and optical camera images to be collected a minimum of once every 60 seconds timelined with the other process parameters (Power, pressure, gas flow, etc)
10 6 Mass Flow Controllers with maximum specified flow rates:
11 Hydrogen @ 1000 sccms, Methane @ 50 sccms, Oxygen @ 20 sccms, Hydrogen:Nitrogen mixture @ 5 sccms, Argon @ 100 sccms, H2(dopant) @ 5 sccms
12 Integrated software controlled Mass Flow Controller calibration process for all 6 MFCs comparing gas flow setpoints to actual flow rates
13 Oil-free Scroll Roughing pump
14 Achievable base pressure of ≤ 5x10^-3 torr
15 Integrated software controlled automated chamber leak up rate testing providing logged data and average leak rate in millitor/minute or millitor/hour for user-defined testing time
16 Water, smoke, & hydrogen leak detectors with interlocks independent of computer PLC
17 Water interlocks in the event of water flow interruption
18 Thermal interlocks in the event of loss of temperature control during operation based upon pyrometer reading
19 Data logging of process parameters, pyrometer data, IR camera data and optical camera images into a SQL database with software integration to historian running on integrated server
20 Integrated software temperature control +/-5 degrees Celsius across the 4" deposition area by automatically varying applied heater power with user defined limits
21 Integrated process software temperature control +/- 5 degrees Celsius across the 4" deposition area by automatically varying applied gas pressure with user defined limits
23 Software recipe must include the ability to ramp all values of microwave power, gas pressure, gas flow and temperature over user-defined time window with minimum time setpoint of 1 second and maximum time setpoint not less than 99 hours
22 Ability to run the reactor via the process software in fully automated mode for all valves, temperature setpoints, pressure setpoints, and gas flow rates via a user entered recipe
24 Ability to operate the reactor via the process software in fully manual mode for all valves, temperature setpoints, pressure setpoints, and gas flow rates
25 Factory Acceptance Testing to be performed by Vendor in the presence of Customer to include the following:
a. System power on
b. All safety checks & interlocks verified
c. Pass vacuum leak test utilizing Helium leak detector (Pass criteria = no leak detected/Helium leak check < 1 x10^-9 torr*l/s)
d. Process gas introduction into chamber
e. Stabilized pressure control at 15.0 +/-0.2 torr with 500 sccms flowing Hydrogen
f. System startup, plasma ignition, temperature control verified and 850 C temperature achieved
26 On-site support for initial equipment installation and acceptance testing for 2 days with travel costs covered by Vendor
27 Final Acceptance on-site at NRL: demonstrated growth of diamond film on customer provided 4" Silicon substrate over a minimum duration of 8 hours
28 One year minimum warranty on all non-consumable parts starting from the date of the Final Acceptance on-site at NRL, with on-site labor support and travel costs covered by Vendor
29 Vendor must operate a facility with a minimum of 5 running CVD diamond reactors and be able to provide process and hardware testing and support with demonstrated service team
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