02 xxxxx SOR for CD standard.pdf
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- Attached to
- NANOPATTERN GRATINGS Federal contract opportunity
- Solicitation number
- 1333ND23QNB640600
About this file
This statement of requirements outlines technical specifications for nanopatterned gratings on silicon wafers to be provided under a federal contract with the National Institute of Standards and Technology. The contractor must deliver five wafers containing line/space patterns of 100nm silicon oxide with specified line edge roughness, pitch and width uniformity, as well as two wafers of 1500nm silicon oxide contact holes and trenches meeting certain diameter, pitch/diameter ratio, and sidewall angle requirements. Individual targets of at least 800um square must be clearly labeled on a minimum of 50 artifacts per wafer. Accompanying each wafer delivery must be scanning electron microscope images of five random targets per artifact achieving stated pixel size and calibration accuracy. All deliverables are due 60 days following award at the NIST Gaithersburg facility. Acceptance will occur within 14 days if a subject matter expert determines through wafer analysis and electron micrograph examination that performance specifications are met.
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| Provisions and Clauses Final.pdf |
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STATEMENT OF REQUIREMENTS
Nanopatterned CD Test Structure for Standard Reference Material
I. SPECIFICATIONS
The Contractor shall provide wafers with nanopattern gratings that meets the following technical specifications:
• General Requirements o Patterns shall be on 300 mm wafers with at least 50 individual artifacts per wafer.
o Individual targets on each artifact shall be at least 800 um x 800 um squares with at least 100 um gap between targets.
o Each target shall have a printed label identifying the target.
o The artifacts may contain more targets than required.
o Scanning Electron Microscopy (SEM) images shall be supplied for at least 5 different targets on every artifact on every wafer (5 targets/artifact, >50 artifacts/wafer).
▪ The measured targets shall be the same for each artifact on the wafer. SEM images shall have 1 micrometer field of view with pixel size of 0.5 nm or less.
▪ SEM calibration shall have an accuracy of 0.5 nm or less.
▪ Vendor shall provide documentation showing recent calibration and qualification of the SEM.
▪ Analysis of the images shall be included to provide line width or hole diameter, pitch, and line edge roughness from the images.
• Five (5) wafers containing artifacts with combination of targets containing line/space and contact holes.
o Pattern structure shall be 100 nm +-10 nm of silicon oxide.
▪ Uniformity of silicon oxide thickness across a wafer and between different wafers shall be less than +-2 nm.
▪ Uniformity is more important than the absolute value of silicon oxide thickness.
o Each artifact shall contain targets with the following line/space structures.
▪ Line patterns shall have line edge roughness < 2.1 nm (3 sigma)
▪ Pitch uniformity across wafer < 0.1 nm
▪ Line width uniformity across wafer < 2 nm
▪ Line sidewall angle > 84 degrees
▪ Series of targets with varying line width and line pitch
• Groups of targets covering 6 different pitches with at least 5 different line widths per pitch (30 total targets)
• Line widths should vary from 50 nm to 100 nm with pitch ratios varying from 2:1 to 10:1.
• Two (2) wafer containing artifacts with high aspect ratio contact holes and trenches.
o Pattern structure shall be 1500 nm +-100 nm of silicon oxide.
▪ Uniformity of silicon oxide thickness across a wafer and between different wafers shall be less than +-50 nm.
▪ Uniformity is more important than the absolute value of silicon oxide thickness.
o Each artifact shall contain targets with the following contact hole structures.
▪ Hole diameter uniformity across wafer < 3 nm
▪ Contact hole sidewall angle > 89 degrees.
▪ Series of targets with varying contact hole diameter
• Groups of targets covering 3 different pitches with at least 5 different hole diameters (15 total targets)
• Hole diameters should vary from 60 nm to 150 nm with pitch/diameter ratios varying from 2:1 to 4:1.
II. DELIVERY
Delivery shall be at NIST Gaithersburg Maryland within 60 days of award between the hours of Monday through Friday 8:30 am to 5:00 pm.
III. DELIVERABLES
Description Quantity Recipient Due Date Delivery of 100 nm line/space wafers
Five (5) SME 60 days after award of this requirement.
Scanning Electron Microscope images of at least 5 different targets for each artifact on line/space wafers images
SME 60 days after award of this requirement.
Delivery of 1500 nm contact hole wafers
Two (2) SME 60 days after award of this requirement.
Scanning Electron Microscope images of at least 5 different targets for each artifact on contact hole wafers images
SME 60 days after award of this requirement.
IV. ACCEPTANCE CRITERIA
Acceptance shall be met once the Subject Matter Expert (SME) analyzes a sub-set of artifacts using scanning electron microscopy to determine that the performance specifications are met and examines electron micrographs of wafers provided by vendor. Acceptance shall occur within 14 days.
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