Project Grant FA95502410312

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...

This Project Grant award of $563,851 from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) will support research at the University of Wisconsin-Madison to develop ultra-wide bandgap AlGaN channel transistors for high-voltage, low-loss power electronics. The key objectives are to: Demonstrate 3-10 kV AlGaN transistors with near-theoretical electric field handling and 10x lower on-resistance compared to Silicon Carbide (SiC) technology. Conduct detailed investigations of...

This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...

The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

The University of Wisconsin-Madison was awarded a $2,480,321 cooperative agreement by the U.S. Department of Energy's Advanced Research Projects Agency-Energy (ARPA-E) Federal Grant Program (CFDA 81.135) to conduct research and development on optically triggered ultra-wide bandgap (UWBG) power electronics. The project, titled "Optically Triggered Ultra-Wide Bandgap (UWBG) Power Electronics," will run from July 1, 2024, to June 30, 2027. As part of this cooperative agreement, the...

This award from the National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems under the Engineering CFDA program provides $1,499,996 to the University of Wisconsin System to conduct research on developing ultra-efficient, high-voltage monolithic bidirectional transistors (MBDTs) for use in power electronics applications. The key objectives are to: 1) demonstrate the first ultra-wide bandgap (UWBG) based MBDTs; 2) enhance the performance and manufacturability of...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $323,000 in funding to The Research Foundation for the State University of New York (RF-SUNY) at the University at Albany. The goal of the project is to develop highly conductive p-type aluminum gallium nitride (AlGaN) semiconductor materials through the use of beryllium (Be) co-doping. The research team plans to fabricate conductive p-type AlGaN using in-situ...