Project Grant FA86552518032

This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) is supporting the development of a new class of two-dimensional (2D) oxyhalide semiconductors that are compatible with back-end-of-the-line (BEOL) processing for energy-efficient electronic devices. The $570,000 award to the University of Texas at Dallas will investigate the low-temperature growth of these 2D oxyhalides and their electronic properties, as well as strategies to control chemical...

The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...

The National Science Foundation (NSF) Division of Materials Research awarded a $271,852 Project Grant to the University of Arkansas (UA), Fayetteville through the Mathematical and Physical Sciences program (CFDA 47.049). The goal of this 3-year project is to study and develop a new semiconductor material system based on silicon, germanium, and tin (SiGeSn) alloys. The research will focus on growing SiGeSn in layered stacks with germanium to create quantum wells with engineered electronic...

This $524,480 Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) supports research at New York University (NYU) on developing novel semiconductor crystal materials and manufacturing processes for advanced optoelectronic applications. The key focus is on understanding how to fabricate "twisted" organic semiconductor crystals that can spontaneously form into aligned networks, enabling them to outperform single crystal materials in properties like...

This $220,000 EAGER grant awarded by the National Science Foundation's (NSF) Division of Electrical, Communications and Cyber Systems supports research into the creation of atom-like defects in semiconductor materials for the development of single-photon emitters at telecommunications wavelengths. The project aims to implant elements such as vanadium and erbium into silicon carbide and aluminum gallium nitride films to form optically active defects that emit at 1.3 and 1.55 micron wavelengths....

This Project Grant award of $416,387 from the National Science Foundation's (CFDA 47.049 - Mathematical and Physical Sciences) program supports a collaborative research project at the Massachusetts Institute of Technology (MIT) to investigate emergent phenomena and novel correlated phases of matter in a unique family of crystalline 2D semiconductor materials. The project aims to leverage the high material quality, electric gate tunability, and strongly interacting electrons within highly...

This $959,229 Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences program supports research on the co-design, fabrication, and characterization of sub-2 nm wide-bandgap semiconductor memristors for neuromorphic computing applications. The research team at the University of Kansas Center for Research Inc., with a sub-award to the University of Houston System, aims to develop atomically tunable memristors based on gallium oxide (Ga2O3) that can...

This Project Grant from the National Science Foundation Division of Civil, Mechanical, and Manufacturing Innovation supports research to advance manufacturing processes for semiconductor electronic and quantum devices at the atomic scale. Funded for $292,392 over two years from January 1, 2023 through December 31, 2024, the award supports the University of Maryland, College Park under the NSF Engineering program (CFDA 47.041). The research aims to develop robust manufacturing techniques with...

This Project Grant award from the National Science Foundation (NSF) Integrative Activities program (CFDA 47.083) provides $299,938 to the Regents of the University of Idaho, doing business as the University of Idaho, to support research on the integration and packaging of wide bandgap semiconductor chips and sensors for extreme high-temperature (up to 600°C) applications. The key objectives of this 2-year project are to investigate the integration of silicon carbide (SiC), gallium nitride (GaN),...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...