Project Grant FA23862414027

This $335,345 National Science Foundation Project Grant supports research to develop a scalable manufacturing process for phase-pure ferroelectric hafnium oxide and hafnium zirconium oxide through plasma-enhanced atomic layer deposition. The University of Virginia will lead a multi-disciplinary, multi-national team in characterizing the impact of atomic layer deposition parameters on amorphous film structure and resulting material phases using advanced microscopy techniques. The research aims to...

This Project Grant award, provided by the National Science Foundation's Engineering (NSF ENG) program (CFDA 47.041), supports fundamental research to develop a scalable manufacturing method for preparing phase-pure ferroelectric hafnium oxide and hafnium zirconium oxide materials. The $125,152 award to Virginia Polytechnic Institute & State University (Virginia Tech) aims to advance the understanding of how atomic layer deposition process parameters impact amorphous structure and its...

The National Science Foundation (NSF) awarded a $631,792 Project Grant under the Mathematical and Physical Sciences program (CFDA 47.049) to Purdue University. The goal of this 3-year project is to develop materials, processes, and devices that maximize the performance and endurance of ferroelectric hafnium oxide in trench capacitor structures for energy-efficient memory applications. The project will leverage advanced thermal and mechanical characterization, as well as machine learning, to...

This Project Grant award of $200,000 from the Department of the Air Force Materiel Command Research Laboratory will fund basic research on material and device engineering of gallium oxide (Ga2O3) for radio frequency electronics. The research is part of the Air Force Defense Research Sciences Program (CFDA 12.800) to maintain Air Force technological superiority in relevant scientific areas and prevent technological surprise. Under the award effective September 24, 2021 through September 23, 2022,...

The National Science Foundation (NSF) awarded a $183,269 Project Grant under the Mathematical and Physical Sciences (CFDA 47.049) program to the University of Tennessee. This grant, with a period of performance from March 1, 2025 to February 29, 2028, supports research focused on exploring the different metastable phases of hafnium oxide (HfO2) under external stimuli such as pressure and electric fields. The key research objectives include: (i) identifying high-pressure routes to new states of...

This $5,186,797 Project Grant award from the Air Force Research Laboratory under the Air Force Defense Research Sciences Program (CFDA 12.800) will support research on multifunctional multiferroic 2D sensors. The research will focus on the development of 2D ferroelectric materials and devices, with work conducted by the University of Arkansas and Georgia TECH Research Corp. Key activities include materials synthesis, characterization of ferroelectric and piezoelectric properties, and device...

The Department of the Air Force Materiel Command Research Laboratory awarded a $341,900 Project Grant to the University of Florida (UF) Division of Sponsored Research under the Air Force Defense Research Sciences Program (CFDA 12.800). The grant supports research on "Dual Beam Laser Interferometry and Ferroelectric Analysis for Physical Assurance of In-Memory Computing and Sensing Technologies" over the period of September 1, 2023 to August 31, 2024. As a leading research...

This $260,000 federal Project Grant award from the National Science Foundation (NSF) Mathematical and Physical Sciences program supports research to develop high-performance, energy-efficient in-memory computing devices using co-designed 2D ferroelectric materials and stacks. The project aims to realize ferroelectric tunnel junctions (FTJs) with low switching voltages, high on/off ratios, and high on-state current densities to enable energy-efficient logic-in-memory hardware. Key research...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...

This $206,457 federal Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of a novel gallium oxide-based transistor for efficient high-power electronic applications. The principal investigator, Elaheh Ahmadi from the University of California, Los Angeles (UCLA), will demonstrate fin field-effect transistors (FinFETs) with breakdown voltages exceeding 3kV, on-resistance under 1 milli-ohm-cm-square, and 98% switching efficiency at...