Project Grant FA23862214006

This Project Grant award of $200,000 from the Department of the Air Force Materiel Command Research Laboratory will fund basic research on material and device engineering of gallium oxide (Ga2O3) for radio frequency electronics. The research is part of the Air Force Defense Research Sciences Program (CFDA 12.800) to maintain Air Force technological superiority in relevant scientific areas and prevent technological surprise. Under the award effective September 24, 2021 through September 23, 2022,...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...

The Office of Naval Research (ONR) awarded a $100,000 Project Grant to Novel Crystal Technology, Inc. under the Basic and Applied Scientific Research program (CFDA 12.300) to support research on the growth and characterization of homoepitaxial beta-Ga2O3 on native substrates for vertical power device applications. The award period is from August 26, 2025 to August 25, 2028 and the place of performance is in Japan. This research aims to advance understanding and capabilities in materials...

The National Science Foundation Division of Electrical, Communications and Cyber Systems awarded a $206,837 Project Grant to the University of Texas at Austin to support collaborative research titled "COLLABORATIVE RESEARCH: NON-CONVENTIONAL ETCHING AND MOCVD REGROWTH FOR BETA-GAO/ALGAO 3D HEMTS." The award period is from October 1, 2021 through July 31, 2022. The research is being conducted under the NSF Engineering Program (CFDA 47.041), which seeks to improve quality of life and...

This National Science Foundation (NSF) Technology, Innovation, and Partnerships (CFDA 47.084) Project Grant award of $305,000 to Gallox Semiconductors Inc. aims to evaluate the use of gallium oxide power devices in power converters to improve the efficiency of power electronics systems, particularly in data centers. The broader goal is to address inefficiencies in power conversion, as electricity goes through multiple conversion steps before reaching end-use devices like computers. This STTR...

The National Science Foundation (NSF) Engineering program (CFDA 47.041) awarded a $200,000 Project Grant to the University of Massachusetts Lowell (UML) to conduct research on advancing the materials and processing foundations necessary to enable the next generation of high-voltage diodes based on beta gallium oxide. The project, titled "ERI: LPCVD-BASED GROWTH AND ETCHING OF GALLIUM OXIDE FOR HIGH ASPECT RATIO VERTICAL TRENCH SCHOTTKY BARRIER DIODES," aims to address key challenges in...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...