Design and fabricate custom silicone carbide devices using a small production line that represents a pure play foundry operation; to devise experiments to better understand these devices: and to use…

Coolcad Electronics, Inc. is performing a two-year project grant funded by the National Institute of Standards and Technology (NIST) under the Measurement and Engineering Research and Standards program (CFDA 11.609) with total obligations of $199,996.72. The award, initiated October 1, 2025 and completing September 30, 2027, supports the design and fabrication of custom silicon carbide (SiC) devices through a small production line operation conducted in collaboration with NIST researchers. The primary deliverables include two small production runs of custom SiC devices (one per year for two years) designed according to established process design kits, with devices laid out according to specified process design rules.

The custom SiC devices will be developed to enable massively parallel measurement systems that form the backbone of a reliability platform. The expected outcomes include lateral SiC device designs that allow for extraction of detailed electrical operation characteristics, along with select vertical devices for operational study. The completed devices, structured similarly to process control modules, will advance understanding of silicon carbide technology adoption in high-voltage and power applications where SiC demonstrates superior electrical and thermal characteristics compared to traditional silicon. This research supports broader U.S. objectives in semiconductor technology leadership and the development of low-loss, high-power systems critical to commercial and defense sectors.

Purpose

The purpose of this project is to design and fabricate custom silicone carbide devices using a small production line that represents a pure play foundry operation; to devise experiments to better understand these devices: and to use these devices in the development of massively parallel measurement systems that forms the backbone of a reliability platform. As silicon carbide is poised to replace silicon in high voltage and power applications due to its superior electrical and thermal characteristics compared to silicon, understanding devices fabricated using this material will only further its adoption by the industry, and pave the way to produce low loss future high-power systems, and also further the goal of the US in leading the development of this technology for energy saving and high voltage applications critical for the commercial industry and the defense sectors.

Activities

Task 1: fabrication: the goal of the program is to have two small production runs of custom silicon carbide devices. There will be one small production run of devices per year for two years. The devices will be designed and laid out according to the process design kit currently used at our partner facility. The devices to be fabricated will be selected in collaboration with NIST researchers. Task 2: fabrication: layout of custom silicon carbide devices the purpose of this task is to layout custom silicon carbide devices to be fabricated. The devices will be designed in conjunction with NIST researchers. They will then be laid out while abiding process design rules.

Expected outcomes

Custom silicon carbide devices are mostly planned to be lateral devices since the lateral design allows for the extraction of electrical operation details. However, some custom vertical devices can also be included for studying their operation. The DIE that includes these designs is likely to be similar to a process control module (PCM). In our NRE runs, we sometimes include PCM dies to investigate the following: 1- channel field effect mobility 2- gate oxide reliability of major importance is the large width and length devices in the mosfet array. Since the short channel and narrow width effects are suppressed in these fets, they are used to calculate peak field effect mobilities and transconductances. They are also used to quantify interface trap densities. These characteristics provide means to objectively compare effects of different processes and geometries on gate oxide quality and reliability.

Intended beneficiaries

The commercial industry and the defense sectors would benefit from this project. The public would also benefit if NIST decides to publish the technology. Understanding devices fabricated using this material will only further its adoption by the industry and pave the way to produce low loss future high-power systems, and further the goal of the US in leading the development of this technology for energy saving and high voltage applications.

Subrecipient activities

The recipient does not intend to subaward funds.