Sbir phase i: ultra-low loss beamformer and combiner-first technology for lower power, consumption phased arrays
Ended Project Grant Awarded Last action
- Award ID
- 2335496
- Recipient
-
OSO Semiconductor Inc. UEI RV3AACLWM8D9
- Awarding agency
-
National Science Foundation
- Obligated
- $274,992
Award facts
- Assistance listing
- 47.084 NSF Technology, Innovation, and Partnerships
- Completion date
- Place of performance
- San Bruno, CA 94066, USA
Award details come from USAspending.gov.
About this award
This National Science Foundation (NSF) Small Business Innovation Research (SBIR) Phase I project award to OSO Semiconductor Inc., a minority-owned small business, will develop a new phased array communication technology to achieve lower power consumption, smaller form factors, and more affordable price targets. The $274,992 grant, awarded on December 15, 2023, will fund the development and testing of an ultra-low loss beamforming circuit that can be integrated into a unique low-power phased array architecture. This technology aims to significantly decrease power consumption and reduce the number of semiconductor chipsets required, particularly important for mobile platforms and satellite communication systems. By addressing high cost and power issues with current phased arrays, this project seeks to enable performance improvements or cost reductions for critical industries such as satellite communications, 5G, and automotive radar. No subawards are planned for this award, which is funded through the NSF Technology, Innovation, and Partnerships program (CFDA 47.084).
Description
- Abstract
- This small business innovation research (sbir) phase i project is to develop a new phased array communication technology which will be able to achieve lower power consumption, smaller form factors, and more affordable price targets. Phased arrays antennas are essential for satellite communications and the broader 5G, defense, and automotive radar markets. The company?s new phased array architecture will significantly decrease the power consumption and the number of silicon chipsets that are required. This is particularly important in thermally limited and power-constrained environments like mobile platforms and satellite communication systems and leads to the reduction of batteries, bulky power supplies, and additional cooling components. Addressing the high cost and power consumption of these phased arrays will have a significant, positive impact on the commercial opportunity by enabling step changes in performance (like data rates and capacity) or reducing costs for sensitive customer segments. This small business innovation research phase i project will demonstrate a more power-efficient and cost-effective phased array semiconductor technology. This technology uses a novel ultra-low loss, high-linearity, passive beamforming circuit in a unique low-power architecture. In the receive configuration, this technology will be able to achieve a 75% reduction in power consumption due to a 4X reduction in the number of receiver signal chains. In phase i, the company aims to advance their ultra-low loss beamforming technology to achieve even lower losses, which will enable the combination of the beamformer with their unique low-power architecture. The following objectives realize these goals: 1) development of the novel ultra-low loss beamformer and integration with a receive front-end, 2) fabrication and performance of benchtop testing on the integrated receive circuit, and 3) performance of over-the-air testing of small and moderately sized phased arrays using the receive circuit. The low-power beamforming technology will overhaul current phased arrays, eliminating many of the lossy, power-intensive and expensive components traditional units require. This technology will enable the creation of higher performance, lower cost phased arrays for many critical industries ranging from satellite communication to 5G to radar. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.- subawards are not planned for this award.
Quick answers
Who received award 2335496?
2335496 was awarded to OSO Semiconductor Inc. by National Science Foundation on December 15, 2023.
How much is award 2335496 worth?
$274,992 has been obligated on 2335496.
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