Sttr phase i: scaling of ALN/GAN/ALN hemts via molecular beam epitaxy

Ended Project Grant Awarded Last action

Award ID
2112247
Recipient
Awarding agency
Obligated
$256,000

Award facts

Assistance listing
47.041 Engineering
Completion date
Place of performance
Ithaca, NY, USA

Award details come from USAspending.gov.

About this award

Written by GovTribe AI ·

Soctera, Inc. received a $256,000 Small Business Technology Transfer (STTR) Phase I Project Grant award from the National Science Foundation to scale aluminum nitride/gallium nitride/aluminum nitride (AlN/GaN/AlN) high electron mobility transistors (HEMTs) using molecular beam epitaxy. The award period was from August 1, 2021 to January 31, 2022. Under the NSF's Engineering program (CFDA 47.041), which seeks to improve quality of life and economic strength through engineering research and development, Soctera will work to advance AlN/GaN/AlN HEMT technology for applications such as power electronics and high-frequency/high-power devices. The place of performance for this work is Ithaca, New York.

Quick answers

Who received award 2112247?

2112247 was awarded to Soctera, Inc. by Division of Industrial Innovation (National Science Foundation) on August 1, 2021.

How much is award 2112247 worth?

$256,000 has been obligated on 2112247.

On GovTribe

See this award's full record

  • Every transaction and subaward
  • The recipient's other awards and teaming partners
  • Similar grant awards
  • Ask GovTribe AI about this award
Try for free Login