Cooperative Agreement W911NF1920305

This $563,851 Project Grant, awarded by the National Science Foundation (NSF) under its Engineering program (CFDA 47.041), aims to demonstrate ultra-wide bandgap transistors capable of 10 kV breakdown voltage with approximately 10 times lower on-state resistance compared to incumbent SiC technology. The key research goals include: 1) first demonstration of Al>0.6GaN transistors up to 10 kV, 2) achieving near-theoretical electric-field handling capability, 3) significant reduction of...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award of $206,457 to the University of California, Los Angeles (UCLA) aims to demonstrate e-mode β-Ga2O3 fin field-effect transistors (FinFETs) with advanced performance specifications. The key technical goals are to develop FinFETs with breakdown voltages beyond 3kV, specific on-resistance lower than 1 milli-ohm-cm-square, and switching efficiency higher than 98% at 15kHz frequency. The research will investigate...

Virginia Polytechnic Institute & State University (Virginia Tech) was awarded a $230,000 Project Grant from the National Science Foundation (NSF) to support research titled "COLLABORATIVE RESEARCH: ECCS-EPSRC: NITRIDE SUPER-JUNCTION HEMTS FOR ROBUST, EFFICIENT, FAST POWER SWITCHING" under the NSF's Engineering (ENG) program. The goal of the research is to develop nitride super-junction high electron mobility transistors (HEMTs) for robust, efficient and fast power switching...

Nomis Power Corporation received a $498,297 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy to develop 6.5kV, 100A silicon carbide power modules at less than half the cost of current commercial solutions. Through this two-year ARPA-E Seed Small Business Innovation Research award, Nomis Power intends to bring to market by July 2023 silicon carbide power semiconductor devices and modules that can meet 21st century energy demands in a more affordable...

This $305,000 Project Grant awarded by the National Science Foundation (NSF) under the Technology, Innovation, and Partnerships (CFDA 47.084) program supports the development of a silicon conductivity-controlled power transistor by Turbo Power Semiconductor Inc., a minority-owned small business located in Austin, Texas. The innovative semiconductor device is designed to significantly reduce power losses in a wide range of power conversion systems, including solar, battery storage, motor...

This award from the National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems under the Engineering CFDA program provides $1,499,996 to the University of Wisconsin System to conduct research on developing ultra-efficient, high-voltage monolithic bidirectional transistors (MBDTs) for use in power electronics applications. The key objectives are to: 1) demonstrate the first ultra-wide bandgap (UWBG) based MBDTs; 2) enhance the performance and manufacturability of...

This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award, totaling $303,103, aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The lead institution, University of Texas at Dallas (UTD), will collaborate on this 3-year project to address existing challenges in ultra-wide bandgap semiconductor device design, materials properties, and packaging techniques. The key...

This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...

The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...