Cooperative Agreement FC2608NT01578

This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $323,000 in funding to The Research Foundation for the State University of New York (RF-SUNY) at the University at Albany. The goal of the project is to develop highly conductive p-type aluminum gallium nitride (AlGaN) semiconductor materials through the use of beryllium (Be) co-doping. The research team plans to fabricate conductive p-type AlGaN using in-situ...

This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...

The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

Adroit Materials, Inc. was awarded a $500,000 Project Grant from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop ion implantation-enabled fabrication of aluminum nitride (AlN) based Schottky diodes. The two-year award, issued on July 5, 2021, will support Adroit Materials' research into using ion implantation techniques to manufacture AlN-based power electronics components with improved performance over traditional silicon devices. ARPA-E's Advanced...

The National Science Foundation Division of Industrial Innovation awarded $256,000 under the Engineering (47.041) federal grant program to Future Semiconductor Business, Inc. from February 2022 to January 2023. The Project Grant funding will support the development of gallium nitride membranes for efficient thermal management in semiconductor manufacturing. Specifically, the awardee will utilize remote epitaxy and 2-dimensional layer transfer technologies to produce high-quality, freestanding...

Adroit Materials, Inc. received a $500,000 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop KV-class gallium nitride-based junction barrier Schottky diodes using ion implantation. The two-year award, issued on June 18, 2021 with a completion date of June 17, 2023, will support Adroit Materials' efforts to advance ARPA-E's objectives of supporting innovative energy technologies. Under the SBIR/STTR program, the company will work on...

Tagore Technology Inc. received a $978,087 cooperative agreement award from the National Science Foundation under the Engineering program (CFDA 47.041) to develop a robust, high-current high-power gallium nitride half-bridge integrated circuit and reference design for an on-board electric vehicle charger. The project aims to improve energy efficiency in power electronics through use of gallium nitride, train graduate students, and accelerate adoption of electric vehicles. Key deliverables...

This Project Grant award from the National Science Foundation (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $315,000 to Virginia Commonwealth University (VCU) to conduct research on co-doping ultra/wide-bandgap III-nitride semiconductors to achieve conductive p-type materials. The goal is to develop highly efficient p-type III-nitride materials, particularly for bright deep ultraviolet (DUV) light-emitting diodes (LEDs), by using beryllium (Be) as an alternative...