Cooperative Agreement DEAR0001562

Sixpoint Materials, Inc. was awarded a $200,000 Project Grant from the Department of Energy Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) on June 27, 2022. The grant will support research into developing gallium nitride-based gunn diodes for terahertz communications in manufacturing applications through June 26, 2023. The Office of Science aims to transform understanding of nature and advance U.S. energy security and economic competitiveness through...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

This Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) will fund the University of California, Los Angeles (UCLA) to develop a novel gallium oxide-based transistor for high-voltage power conversion applications. The $206,457 award aims to demonstrate e-mode β-Ga2O3 fin field-effect transistors (FinFETs) with breakdown voltages beyond 3kV, on-resistance less than 1 mΩ-cm2, and switching efficiency greater than 98% at 15kHz. The research will...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

Diversified Technologies, Inc. received a $199,615 project grant award from the Department of Energy Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to develop solid state circuit breaker (SSCB) technology from June 28, 2021 through March 27, 2022. The Office of Science's program supports scientific research advancing the nation's energy and economic security through basic research projects. This award aimed to deliver SSCB prototypes, which could improve...

The Massachusetts Institute of Technology (MIT) received a $4.973 million cooperative agreement award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to experimentally demonstrate vertical gallium nitride super junction (GaN SJ) devices for the first time under the Advanced Research Projects Agency - Energy program (CFDA 81.135). The project, running from July 2022 to July 2025, aims to simulate, design, grow epitaxial layers, fabricate, characterize and...

Adroit Materials, Inc. received a $500,000 Project Grant award from the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to develop KV-class gallium nitride-based junction barrier Schottky diodes using ion implantation. The two-year award, issued on June 18, 2021 with a completion date of June 17, 2023, will support Adroit Materials' efforts to advance ARPA-E's objectives of supporting innovative energy technologies. Under the SBIR/STTR program, the company will work on...

This National Science Foundation (NSF) CAREER award, funded under the Engineering program (CFDA 47.041), aims to develop ultra-wide bandgap AlGaN channel transistors capable of 10 kV breakdown voltage and ~10x lower on-state resistance compared to incumbent SiC technology. The $563,851 project, running from July 2025 to June 2030, will focus on demonstrating these state-of-the-art power electronics transistors and investigating the underlying physical mechanisms that govern their operation and...

This $419,379 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) aims to develop innovative gallium nitride (GaN)-based terahertz (THz) photoconductive emitters with an optical-to-THz energy conversion efficiency approaching or exceeding 100%. The research project will focus on three core areas: (1) designing GaN photoconductive switches with high breakdown electrical fields, (2) investigating ultrafast carrier dynamics and THz generation in...