Develop low-temperature circuit modeling techniques for silicon devices operating at cryogenic temperatures to design electronics working at low temperatures for nascent quantum computing…

Active Cooperative Agreement Awarded Last action

Award ID
70NANB25H054
Recipient
Awarding agency
Obligated
$74,998

Award facts

Assistance listing
11.609 Measurement and Engineering Research and Standards
Completion date 38% complete
Place of performance
Greenbelt, MD 20770, USA

Award details come from USAspending.gov.

Description

Purpose
The purpose of this grant is to develop low-temperature circuit modeling techniques for silicon devices operating at cryogenic temperatures to design electronics working at low temperatures for nascent quantum computing applications.
Activities
The researchers will focus on two integrated tasks: 1) measuring silicon-on-insulator devices at a low temperature, 4K, using cryogenic probing systems at NIST, needed for its compact model extraction; and 2)creating a bsim silicon-on-insulator compact circuit simulation software modeling equation set.
Expected outcomes
The spice model development, which allows for measurements at low temperatures, will help improve circuit library development and the process design kit for semiconductor foundry services.
Intended beneficiaries
Semiconductor foundries will be able to provide resulting measurements and models for the semiconductor industry designing electronics working at low temperatures for nascent quantum computing applications.
Subrecipient activities
The recipient does not intend to subaward funds.

Quick answers

Who received award 70NANB25H054?

70NANB25H054 was awarded to Coolcad Electronics, Inc. by National Institute of Standards and Technology (Department of Commerce) on September 1, 2025.

How much is award 70NANB25H054 worth?

$74,998 has been obligated on 70NANB25H054.

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