Direct electron LP will develop a new high-speed camera for high-resolution electron backscatter diffraction (HR ebsd) and transmission kikuchi diffraction (TKD), which will significantly expand the…

Active Cooperative Agreement Awarded Last action

Award ID
70NANB24H269
Recipient
Awarding agency
Obligated
$289,692

Award facts

Assistance listing
11.042 CHIPS Research and Development
Completion date 81% complete
Place of performance
San Diego, CA 92128, USA

Award details come from USAspending.gov.

About this award

The National Institute of Standards and Technology (NIST) awarded a $289,692 Cooperative Agreement (CFDA 11.042 - CHIPS Research and Development) to Direct Electron, L.P., a small disadvantaged business located in San Diego, California. The purpose of the award is for Direct Electron to develop a new high-speed, high-resolution camera system for electron backscatter diffraction (HR EBSD) and transmission Kikuchi diffraction (TKD) applications in scanning electron microscopes (SEMs). The new camera system will utilize a novel large-format, direct detection sensor optimized for low-energy electron imaging to enable advanced materials characterization capabilities. As part of the project, Direct Electron plans to subaward funds for facilities access and technical consulting related to CMOS image sensor design and HR EBSD image processing. The award has a performance period from October 1, 2024 to April 30, 2027, with the goal of delivering a new camera system compatible with commercial SEM equipment to benefit the U.S. semiconductor industry.

Description

Activities
The awardee will demonstrate the feasibility of using a large-format direct detection sensor to perform a variety of measurements using HR ebsd and TKD, and then develop and test a functional prototype of the new high-resolution sensor and high-speed camera system.
Expected outcomes
A new camera system compatible with a range of commercial SEM equipment that enables new materials characterization methods.
Intended beneficiaries
U.S. Semiconductor industry using materials characterization during development, quality control, and failure analysis for current and next-generation devices.
Subrecipient activities
The recipient plans to subaward funds for facilities access for demonstrating and testing prototypes, and for technical consulting related to cmos image sensor design and HR ebsd image processing.

Quick answers

Who received award 70NANB24H269?

70NANB24H269 was awarded to Direct Electron, L.P. by National Institute of Standards and Technology (Department of Commerce) on October 1, 2024.

How much is award 70NANB24H269 worth?

$289,692 has been obligated on 70NANB24H269.

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