This National Science Foundation (NSF) Cooperative Agreement award under the Technology, Innovation, and Partnerships (CFDA 47.084) program provides $1,000,000 in funding to Crystal Sonic Inc. to develop a process that uses acoustic energy to precisely lift thin layers of gallium nitride (GaN) semiconductor material from a reusable wafer substrate. The objective is to significantly reduce the material costs of manufacturing advanced GaN power electronics compared to legacy silicon devices. The technology enables wafer reuse, lowering energy consumption and pollution in the semiconductor manufacturing process. This effort is expected to accelerate the broader adoption of higher-performance, energy-efficient GaN devices across diverse applications critical to the nation's energy, transportation, and communications infrastructure.
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