Spire semiconductor proposes to make an ingaas-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a gphs) efficiently. Semi-insulating INP…
Ended Purchase Order Awarded Last action
- Contract number
- NNX11CE10P
- Awardee
-
Spire Semiconductor, LLC UEI D1XNAKW7YUU8
- Awarding agency
-
Shared Services Center
National Aeronautics and Space Administration
- Obligated
- $99,486
Award facts
- Opportunity
-
- SBIR11PH01 Solicitation number
- Contract value 100% obligated
- $99,486.00 Current and potential, with all options
- Completion date 100% complete
- Current and potential, with all options
- Funding agency
- Glenn Research Center National Aeronautics and Space Administration
- NAICS code
- 541712 Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Set-aside
- Total Small Business
- Competition
- Full and Open Competition after exclusion of sources · 4 offers Negotiated Proposal / Quote
- Pricing
- Firm Fixed Price
- Place of performance
- John C. Stennis Space Center, MS 39529, USA
- Research
- SBIR Program Phase I Action
Award details come from SAM.gov/FPDS.
Transactions
| Action | Obligated | Date |
|---|---|---|
| Supplemental Agreement for work within scope | $0 | |
| Funding Only Action | $54,317 | |
| Funding Only Action | $16,000 | |
| Funding Only Action | $12,501 | |
| Funding Only Action | $8,334 | |
| Original award | $8,334 |
Description
Spire semiconductor proposes to make an ingaas-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a gphs) efficiently. Semi-insulating INP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In phase 2, we would further refine the structure and incorporate the material into MIM modules.
Quick answers
Who was awarded contract NNX11CE10P?
NNX11CE10P was awarded to Spire Semiconductor, LLC by Shared Services Center (National Aeronautics and Space Administration) on February 18, 2011.
How much is contract NNX11CE10P worth?
The government has obligated $99,486 on NNX11CE10P.
Which agency awarded contract NNX11CE10P?
Shared Services Center (National Aeronautics and Space Administration) awarded NNX11CE10P, with funding from Glenn Research Center (National Aeronautics and Space Administration).
Was contract NNX11CE10P competed?
The extent of competition for NNX11CE10P was full and open competition after exclusion of sources. The government received 4 offers. It was set aside: Total Small Business.
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