Sbir (small business innovative research) phase III - extreme environments technology - extreme environment circuit blocks for spacecraft power & propulsion system & other high reliability…

This is a $249,999.00 firm fixed price purchase order contract awarded by the National Aeronautics and Space Administration (NASA) Langley Research Center to Frequency Management International, Inc., a small business. The purpose is to design single-event effect (SEE) and total ionizing dose (TID) hardened silicon carbide power metal-oxide-semiconductor field effect transistors (SiC power MOSFETs) for use in next-generation aerospace power systems, including high-temperature boost power propulsion units. This work builds on the contractor's prior expertise in SiC semiconductor process development and fabrication. The contract is set aside for small businesses and has a period of performance ending on March 1, 2016.

Sbir (small business innovative research) phase III - extreme environments technology - extreme environment circuit blocks for spacecraft power & propulsion system & other high reliability applications - the purpose and objective of the work to be performed is to design single-event effect (see) and total ionizing dose (TID) hardened silicon carbide power metal-oxide-semiconductor field effect transistors (SIC power mosfets). Next generation aerospace power systems including the high-temperature boost power propulsion unit demand high-efficiency power technologies to achieve lower cost, higher efficiency, and expanded capability. Silicon carbide power device technology offers higher breakdown voltages combined with lower losses and operability within a broader temperature range as compared to silicon technology. The high tolerance of commercial SIC components to total ionizing dose (TID) has enhanced the allure of SIC technology in the aerospace community. To date, however, SIC power devices have not performed well under heavy-ION irradiation, suffering degradation and catastrophic see. This susceptibility to see severely limits or prevents the use of this technology for space applications. Chronos technology and its partners have previously engaged in extensive work in advancing the state of the art in SIC semiconductor precision process development and fabrication techniques and are thus well suited to undertake the work required. Tcad simulations to define wafer splits and ensure that the new designs of the power mosdwts meet the electrical and radiation specifications. This work shall in part include simulation of heavy-ION strikes and the analysis of impact to electric fields, heating , etc. Tradeoffs and alternatives of SIC power mosfet packaging option with the HTB PPU project team and implement the package per the application requirements and develop the custom packaging and a gate driver within a same microelectronic package housing HTP ( high temperature boost) power process unit (PPU) will select the gate driver. Design and develop the same housing packaging for the mosfets and gate driver with integration and testing plan. Mosfet designs shall be laid out using a CAD tool and masks generated for the fabrication. Discussions will be held as to any preference or decisions on the quantity and configuration of said devices in terms of bare DI VS. Package. Deliver final report to NASA. Presentation to the project team through a web-x teleconference summarizing the results of the described tasks.