Recent advances in the UV responsivity of silicon-based imaging arrays motivate US to develop and test a fully UV-optimized cmosdetector focal-plane array (FPA) prototype. Notable innovations in…

Ended Grant For Research Awarded Last action

Contract number
80NSSC18K1574
Awardee
Awarding agency
Obligated
$713,185

Award facts

Contract value 100% obligated
$713,184.72 Current and potential, with all options
Completion date 100% complete
Current and potential, with all options
Contracting staff
NAICS code
Not on record
Set-aside
No set-aside
Competition
Full and Open Competition Basic Research
Pricing
Other
Place of performance
San Antonio, TX 78238, USA

Award details come from SAM.gov/FPDS.

Transactions

Action Obligated Date
Funding Only Action P00008 -$62,298
Other Administrative Action P00007 $0
Other Administrative Action P00006 · Development of far-UV-sensitive silicon imaging arrays for compact UV instrumentation $0
Other Administrative Action P00005 $0
Funding Only Action P00004 $150,000
Funding Only Action P00003 $118,844
Funding Only Action P00002 $262,076
Other Administrative Action P00001 $0
Original award $244,563

About this award

This federal contract award is for the "Development of Far-UV-Sensitive Silicon Imaging Arrays for Compact UV Instrumentation" and was granted to the Southwest Research Institute (SwRI), a non-profit research and development organization based in San Antonio, Texas. The contract, valued at $713,184.72, is a grant for research work focused on enhancing the ultraviolet (UV) responsivity of silicon-based imaging arrays. This effort aims to develop a fully UV-optimized complementary metal-oxide-semiconductor (CMOS) detector focal-plane array (FPA) prototype that can offer performance competitive with state-of-the-art microchannel plate (MCP) technology, while reducing the power, mass, and complexity of future UV spectrographs and imagers. The award is not associated with any set-aside designation. The funding agency is a civilian U.S. government agency, and the work is expected to be completed by August 31, 2024. This contract supports the agency's interest in advancing silicon-based UV detector technology for potential use in future low-cost planetary exploration missions, including those utilizing CubeSats and other small satellite platforms.

Description

Recent advances in the UV responsivity of silicon-based imaging arrays motivate US to develop and test a fully UV-optimized cmosdetector focal-plane array (FPA) prototype. Notable innovations in silicon-based fpas have led to the development of detectors with quantum efficiencies at mid-UV wavelengths (200-300 NM) that are competitive with state of the art microchannel plate (MCP) technology (e.g., BAI ET AL., spie, 2008; nikzad ET AL., 2011) with the added advantage that, unlike mcps, they do not require highvoltage power supplies. Hence, the utilization of these innovative detectors in future UV spectrographs or imagers will reduce the power, mass and complexity of such instruments over their current equivalents, making them well-suited for future low-cost planetary missions including those based on cubesats and other smallsat platforms. In previous studies we characterized the far-UV (100-200 NM) performance of UV-optimized N-type silicon devices at swri (davis ET AL, spie 2012) and began to develop methods of enhancing the far-UV response by doping thinned-silicon wafers with antimony using molecular beam epitaxy (MBE) (retherford ET AL., jatis, 2015). This work demonstrated that the MBE process is feasible for silicon wafers with thicknesses as little as 100 microns; an important result, given the short absorption depth of far-UV photons in silicon. Methods of cleaning the wafers prior to MBE were investigated at MIT lincoln laboratory, and the MBE process was optimized through a series of experiments in which the target doping concentrations, growth temperatures and epitaxial-silicon thicknesses were varied. Exploiting this initial success, we intend to (1) complete the optimization of the MBE process for N-type backside-illuminated cmos hybrid arrays from teledyne, (2) expand the assessment to include MBE process on state-of-the-art P-type cmos monolithic arrays made using ~10-micron epitaxial-wafers from teledyne E2V, and investigate options for anti-reflectance coatings to reject longer wavelength light, and (3) fabricate and test UV-optimized photodiodes, analyzing their response to wavelengths from far UV to the visible. We will also develop a full prototype FUV-optimized cmos FPA taking advantage of flight-heritage array formats such as hawaii-1RG. For the component technologies developed in this program, the entrance TRL of 3 will be raised to TRL 4 or higher upon exiting the program. Once developed, these UV-optimized devices will enable highly capable smallsat investigations of lunar polar volatiles, venusian upper atmosphere composition and dynamics, water vapor plumes at enceladus and/or europa, and other targeted science measurements detailed within the vision and voyages planetary decadal survey.

Quick answers

Who was awarded contract 80NSSC18K1574?

80NSSC18K1574 was awarded to Southwest Research Institute by Shared Services Center (National Aeronautics and Space Administration) on September 1, 2018.

How much is contract 80NSSC18K1574 worth?

The government has obligated $713,185 on 80NSSC18K1574.

Was contract 80NSSC18K1574 competed?

The extent of competition for 80NSSC18K1574 was full and open competition.

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