An improved efficiency amplifier for high power pulse applications at p-band will be investigated that will support space based radar systems. Current p-band pulsed amplifier technologies use…
Ended Definitive Contract Awarded Last action
- Contract number
- NNX14CP07C
- Awardee
-
Integra Technologies, Inc. UEI UL1XJ5MK7QB5
- Awarding agency
-
Shared Services Center
National Aeronautics and Space Administration
- Obligated
- $967,457
Award facts
- Opportunity
-
- NNX14SBIRPHASE11 Solicitation number
- Contract value 100% obligated
- $967,457.00 Current and potential, with all options
- Completion date 100% complete
- Current and potential, with all options
- NAICS code
- 541712 Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Set-aside
- Total Small Business
- Competition
- Full and Open Competition after exclusion of sources · 430 offers Negotiated Proposal / Quote
- Pricing
- Firm Fixed Price
- Place of performance
- El Segundo, CA, USA
- Research
- SBIR Program Phase II Action
Award details come from SAM.gov/FPDS.
Transactions
| Action | Obligated | Date |
|---|---|---|
| Other Administrative Action | $0 | |
| Exercise an Option | $217,457 | |
| Other Administrative Action | $0 | |
| Original award | $750,000 |
Description
An improved efficiency amplifier for high power pulse applications at p-band will be investigated that will support space based radar systems. Current p-band pulsed amplifier technologies use silicon BI-polar and ldmos device technologies that have increased internal device parasitic characteristics that lead to lower gain and more difficult power matching over GAN technologies. Integra technologies has experience with all three device technologies. Integra also has the design and manufacturing processes in place to optimize transistor design and amplifier design for p-band pulsed applications. The phase i effort resulted in successful demonstration of an integra GAN device at p-band frequencies using class AB bias and switch mode matching techniques to achieve greater than 80% efficiency at 160W. The phase II device investigation will include geometry modifications to optimize the operating voltage, chip size, and cell dimensions for the p-band radar application. Ultimately, the optimized GAN device will be scaled into a 1KWATT output stage with an appropriate driver device to enable a greater than 40DB gain amplifier. The amplifier will include material selections and layout techniques for reliability under high RF energy signal levels and low pressure environments.
Quick answers
Who was awarded contract NNX14CP07C?
NNX14CP07C was awarded to Integra Technologies, Inc. by Shared Services Center (National Aeronautics and Space Administration) on April 24, 2014.
How much is contract NNX14CP07C worth?
The government has obligated $967,457 on NNX14CP07C.
Was contract NNX14CP07C competed?
The extent of competition for NNX14CP07C was full and open competition after exclusion of sources. The government received 430 offers. It was set aside: Total Small Business.
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