Sbir phase II effort

Ended Definitive Contract Awarded Last action

Contract number
HQ072723C0002
Awardee
Awarding agency
Obligated
$1,315,210

Award facts

Contract value 100% obligated
$1,315,210.31 Current and potential, with all options
Completion date 100% complete
Current and potential, with all options
Contracting staff
Set-aside
Total Small Business
Competition
Full and Open Competition after exclusion of sources · 1 offer Negotiated Proposal / Quote
Pricing
Fixed Price Level of Effort
Place of performance
Rockledge, FL, USA
Research
STTR Phase II
Legislative mandates

Award details come from SAM.gov/FPDS.

Transactions

Action Obligated Date
Supplemental Agreement for work within scope P00003 · Sbir phase II $0
Supplemental Agreement for work within scope P00002 · Sbir phase II research and development efforts to provide flexible, full-spectrum microelectronics solutions. Extends period of performance. $0
Supplemental Agreement for work within scope P00001 · Sbir phase II effort - incorporates revised statement of work $0
Original award $1,315,210

About this award

The Defense Microelectronics Activity awarded a $1,315,210.31 fixed-price level-of-effort definitive contract to Mainstream Engineering Corp for an SBIR Phase II effort on August 7, 2023, under a total small business set-aside, with ultimate completion on June 7, 2026.

The originating solicitation addresses development of commercially viable 20-kV-class ultra-high-voltage insulated gate bipolar transistors (IGBTs) with low on-state voltage drop, low off-state leakage current, and modest device footprint. The effort leverages Technology Computer Aided Design (TCAD) simulations to optimize key device architecture components, targeting power transmission applications such as microgrids with distributed and fluctuating sources of power generation. Place of performance is Rockledge, FL.

Mainstream Engineering is supported by The Pennsylvania State University Applied Research Laboratory, which brings over 20 years of experience in silicon carbide materials and device development for defense applications, including halide chemical vapor deposition (HCVD) process capability for high-quality SiC homoepitaxial film growth. National Technology & Engineering Solutions of Sandia, LLC provides additional technical support.

Subawards

Subcontractor Amount Awarded
The Pennsylvania State University SBIR PHASE II EFFORT - INCORPORATES REVISED STATEMENT OF WORK The Penn State University Applied Research Laboratory (PSU/ARL) will leverage its extensive… $200,000
National Technology & Engineering Solutions Of Sandia, LLC SBIR PHASE II EFFORT - INCORPORATES REVISED STATEMENT OF WORK Ultra-high-voltage Insulated Gate Bipolar Transistors (IGBT) with blocking voltages in excess of… $100,000

Quick answers

Who was awarded contract HQ072723C0002?

HQ072723C0002 was awarded to Mainstream Engineering Corp by Defense Microelectronics Activity (Department of Defense) on August 6, 2023.

How much is contract HQ072723C0002 worth?

The government has obligated $1,315,210 on HQ072723C0002.

Was contract HQ072723C0002 competed?

The extent of competition for HQ072723C0002 was full and open competition after exclusion of sources. The government received 1 offer. It was set aside: Total Small Business.

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