This federal contract award, valued at $1,099,998.46, was issued by the U.S. Army Research, Development and Engineering Command (RDECOM) to Coolcad Electronics, Inc., a small business, under the Small Business Innovation Research (SBIR) Phase II program. The contract is for the development of advanced semiconductor technologies, including wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN), for applications in areas such as power electronics, integrated circuits, and...
This is a $1,499,989.00 cost-plus-fixed-fee SBIR Phase II contract awarded by the Defense Advanced Research Projects Agency (DARPA) to Coolcad Electronics, Inc., a small business, for the development of a silicon carbide (SiC) CMOS integrated circuit high-temperature sensing platform with enhanced gate oxide reliability. The contract supports the statement of work "SiC CMOS Integrated-Circuit High-Temperature Sensing Platform with Enhanced Gate Oxide Reliability" and has a period of...
This is a Small Business Innovation Research (SBIR) Phase I research study contract awarded by the Defense Microelectronics Activity (DMEA), a defense agency. The contract, valued at $167,497.38, was awarded to Coolcad Electronics, Inc., a small for-profit company specializing in semiconductor technology. The contract is focused on developing advanced semiconductor technologies, particularly wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN), with applications in power...
This is a Small Business Innovation Research (SBIR) Phase I contract awarded by the Defense Advanced Research Projects Agency (DARPA) to Coolcad Electronics, Inc., a small for-profit semiconductor technology company. The $98,994 firm-fixed-price contract is focused on developing advanced semiconductor technologies, particularly wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN), for power electronics, integrated circuits, and specialized electronic components. The...
<p>The U.S. Air Force awarded a $3,384,638.00 firm-fixed-price definitive contract to Genesic Semiconductor LLC, a small business, for the performance, yield, and cost improvement to medium voltage silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The contract has a period of performance through November 3, 2025. This award is not associated with a larger contract vehicle.</p>
<p>This federal contract award was made by the Office of Naval Research (ONR), a defense agency, to United Silicon Carbide, Inc., a small business contractor, for the development of a 6500V-100A SIC JFET-based half-bridge module under the Small Business Innovation Research (SBIR) program. The fixed-price contract has a ceiling value of $149,794.00 and a period of performance ending on November 10, 2017. The contract was set aside for small businesses.</p>
This is a $17,699,427.00 cost-plus-fixed-fee contract awarded by the Air Force Research Laboratory (AFRL) to Cree Fayetteville, Inc., doing business as Apei, for the development of silicon carbide power electronics for more electric aircraft. The contract is for Phase III of the Small Business Innovation Research (SBIR) program and has a period of performance through September 29, 2023. No set-aside designation was used. Cree Fayetteville, Inc. is a subsidiary of Wolfspeed Inc., a leading...
This is a Small Business Innovation Research (SBIR) Phase I contract awarded by the Defense Microelectronics Activity (DMEA), a defense agency, to Nanomatronix LLC, a small business subchapter S corporation. The contract is for a software tool to model, simulate, optimize, and monitor thick silicon carbide (SiC) epitaxy processes at the Multi-User Silicon Carbide (MUSIC) foundry. The contract has a ceiling value of $99,999.06 and a completion date of May 7, 2025. As an SBIR Phase I award, this...
This SBIR Phase II contract, valued at $749,645.00, was awarded by the National Aeronautics and Space Administration (NASA) to United Silicon Carbide, Inc. The contract aims to develop radiation-tolerant, extreme temperature-capable electronics based on silicon carbide (SiC) technology to support NASA's planned missions, such as in-situ exploration of Venus and long-duration Europa-Jupiter missions. The SiC junction field-effect transistor (JFET) integrated circuits produced under this...
This federal contract award, valued at $749,998.00, was made to Coolcad Electronics, Inc., a small business, by the National Aeronautics and Space Administration (NASA) through the Small Business Innovation Research (SBIR) program. The contract is for the development of radiation-tolerant high voltage silicon carbide (SiC) switches, which have applications in satellite systems, harsh environment sensing, and defense technologies. This Phase III SBIR contract builds upon previous research and...