PECVD SOW 2.13.25.pdf

APPENDIX B – Statement of Work

APPENDIX B – Statement of Work

Project title Plasma Enhanced Chemical Vapor Deposition (PECVD) System

Version created date

02/13/2025

Project No. G4-317054.1 Version # 2

Estimated Delivery

November 2025 Version status Final

This Statement of Work (SOW) will be the basis for the procurement of a Plasma Enhanced Chemical Vapor Deposition (PECVD) system for the Center for Nanoscale Materials (CNM) at Argonne National Laboratory (ANL).

APPENDIX B – SOW for Plasma Enhanced Chemical Vapor Deposition (PECVD) System Page 2 of 4

Contents 1 Scope

2 Objectives

3 Technical Requirements

4 Deliverables, Timing, Location, and Documentation

4.1 Deliverables

4.2 Timing

4.3 Location

4.4 Final Acceptance (FAT)

5 Quality Assurance

APPENDIX B – SOW for Plasma Enhanced Chemical Vapor Deposition (PECVD) System Page 3 of 4

1 Scope

The contractor will engineer, manufacture and assemble the instrument. The contractor shall first test the instrument at the contractor's facility to demonstrate that the instrument meets the required technical specifications.

2 Objectives

The contractor shall then disassemble the tool at the contractor’s facility, ship the instrument to the CNM, reassemble the instrument at the CNM, test and commission the instrument at the CNM. It is the contractor's responsibility to ensure that the instrument complies with all the specification requirements and the safety codes and standards.

3 Technical Requirements

1. The system must have a pressurized reactor design with an exterior chamber at a much lower pressure than the process chamber to prevent contamination from entering the deposition zone

2. Capable of rapid and uniform film deposition for a wide range of materials including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films, on wafers up to 200 mm diameter

3. Hot wall pressurized PECVD reactor that allows for exceptional film uniformity, and minimum contamination and particle load

4. Dual frequency power generators to allow easy film stress control and optimization

5. Maintenance-free pressure control system and maintenance-free PECVD reactor

6. Deposition of 500 nm SiO2 on 100mm SEMI Si wafer that can achieve deposition rate > 40 nm/min, refractive Index of 1.47 +/- 0.02 at 677 nm, stress within -500 to -200 MPa, uniformity within wafer ≤ +/- 3

7. Deposition of 500 nm SiN on 100mm SEMI Si wafer that can achieve deposition rate > 50 nm/min, refractive Index of 1.95 +/- 0.03 at 677 nm, BOE 7:1 etch rate <30 nm/min at 21°C, stress within -500 to -200 MPa, uniformity within wafer ≤ +/- 3

4 Deliverables, Timing, Location, and Documentation

4.1 Deliverables

Plasma Enhanced Chemical Vapor Deposition (PECVD) System

4.2 Timing

The estimated delivery and installation requirement for the system is November 2025 or sooner.

4.3 Location

Delivery will be to Argonne National Laboratory, Building 46.

9700 S Cass Avenue, Lemont, IL.

4.4 Final Acceptance (FAT)

Requirements Specs Results

1. Checking of system specifications according to Quality Control Sheet

OK

APPENDIX B – SOW for Plasma Enhanced Chemical Vapor Deposition (PECVD) System Page 4 of 4

2. Checking of etching process specifications:

2.1 PECVD of 500 nm SiO2 on 100mm SEMI Si wafer (dual

frequency)

Deposition rate (nm/min) Refractive Index at 677 nm Stress (MPa)

Uniformity within wafer (%) (*)

> 40

1.47 +/- 0.02 -500…-200 compressive

≤ +/- 3

3. PECVD of 500 nm SiN on 100mm SEMI Si wafer (NH3-based, dual frequency)

Deposition rate (nm/min) Refractive Index at 677 nm BOE 7:1 21°C (nm/min) Stress (MPa)

Uniformity within wafer (%) (*)

> 50

1.95 +/- 0.03

< 30 -500…-200 compressive

≤ +/- 3

5 Quality Assurance

Acceptance is based upon receipt, inspection, and confirmation of order delivery without damage, in addition to the above mentioned acceptance criteria.

5 Quality Assurance