Addendum and Acknowledgement Doc.doc

MOLLY MURTAUGH

Procurement Specialist 3 Office of the Chief Financial Officer

Procurement Department

Argonne National Laboratory

9700 South Cass Avenue, Bldg. 201

Lemont, IL 60439

(630)252-3094 mmurtaugh@anl.gov

02/21/2025

TO ALL OFFERORS:

Subject:

Request for 5-B176-Q-00304-00 No.

Addendum No. 001 Attached herewith for your information and use in preparing your proposal for subject project is one (1) copy of Addendum No.001.

Kindly acknowledge receipt of this Addendum by signing and returning one (1) copy of this letter and including this signed document with the completed Request for Quotation by the offer deadline.

Sincerely, MOLLY MURTAUGH

Procurement Specialist 3

Procurement Department

Receipt Acknowledged:

Company:

By:

cc:

File

CF

Addendum No.

TO

REQUEST FOR 5-B176-Q-00304-00

FOR

Argonne National Laboratory

BLDG. 201 OCF

9700 S. Cass Ave.

Lemont, IL 60439

02/21/2025 This addendum is being issued to incorporate the addition of questions and responses as follows:

1. Will a parallel-plate type PECVD system equipped with a vacuum loadlock chamber be acceptable? Would a loadlock system be acceptable because the reaction chamber has a much lower pressure than the loadlock due to a turbomolecular pump lowering the pressure?

A loadlock system alone is not sufficient. The system must have a pressurized reactor design with an exterior chamber at a much lower pressure than the process chamber to prevent contamination from entering the deposition zone.

2. Is hot wall PECVD reactor mandatory?

Yes.

3. Is pressurized reactor mandatory? Our reaction chamber is always under vacuum. The loadlock chamber is cycled between atmospheric pressure and vacuum for loading/unloading and transfer of wafer.

Yes, a pressurized reactor is mandatory.

4. Could you please specify what kind of film (materials) does your End-User wants to deposit using this system?

A wide range of materials including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films.

5. The RFQ states, “Maintenance-free pressure control system and maintenance-free PECVD reactor”. Can you please elaborate what this means?

"Maintenance-free pressure control system" means the system doesn't have mechanical components prone to clogging by deposits. "Maintenance-free PECVD reactor" means the reactor should have hot wall to enable high-efficiency of in-situ plasma cleaning so that the reactor does not require for manual cleaning.

6. For the acceptance criteria, is dual frequency required or optional for the depositions themselves?

Dual frequency is required.

7. Is uniformity within wafer (%) <+/- 3 measured by using the formula (max-min)/2/average?

Uniformity = ±[(max-min)/(max+min)]*100% over 5 points per wafer. Characteristics are measured on wafers with edge exclusion of 7 mm. Locations of measurement points are center, top, bottom, left right.

8. What are the deposition temperature requirements?

150 - 320 degree C.

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